CEU3301 [CET]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CEU3301 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CED3301/CEU3301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -28A, RDS(ON) = 32mΩ @VGS = -10V.
RDS(ON) = 50mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
-30
Gate-Source Voltage
±20
-28
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
-100
42
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
W
PD
0.33
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
3
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 2. 2007.Jan
Details are subject to change without notice .
http://www.cetsemi.com
1
CED3301/CEU3301
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -2A
-1
-3
32
50
V
26
38
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
Coss
Crss
VDS = -10V, ID = -5.3A
10
1165
265
165
S
pF
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
16
9
32
18
ns
ns
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
61
25
19.6
4.5
3
122
50
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
26
nC
nC
nC
VDS = -15V, ID = -5.3A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
-28
A
V
VSD
VGS = 0V, IS = -2.3A
-1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CED3301/CEU3301
30
24
18
12
50
40
30
20
-VGS=10,8,6V
-VGS=4V
25 C
10
6
0
TJ=125 C
-55 C
-VGS=3V
2.5 3
0
0
0.5
1
1.5
2
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=-5.3A
VGS=-10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
102
101
V
GS=0V
VDS=VGS
ID=-250µA
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CED3301/CEU3301
102
10
8
VDS=-15V
ID=-5.3A
RDS(ON)Limit
100µs
1ms
10ms
101
DC
6
4
100
6
2
TC=25 C
TJ=150 C
Single Pulse
10-1
0
10-1
100
101
102
0
5
10
15
20
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
t1
t2
0.05
0.02
0.01
1. Rθ JC (t)=r (t) * Rθ JC
2. Rθ JC=See Datasheet
3. TJM-TC = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-1
100
101
102
103
104
10-2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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