CEU3060 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEU3060 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CED3060/CEU3060
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V.
RDS(ON) = 9.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
75
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
300
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
62.5
0.5
W
PD
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.0
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 2. 2007.Oct.
Details are subject to change without notice .
http://www.cetsemi.com
1
CED3060/CEU3060
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
1
3
V
5.5
7.5
6.6
9.5
mΩ
mΩ
On-Resistance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
2465
330
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
190
td(on)
tr
td(off)
tf
18
5
36
10
ns
ns
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
51
102
20
ns
Turn-Off Fall Time
10
ns
Total Gate Charge
Qg
15.6
5.2
3.2
20.3
nC
nC
nC
VDS = 15V, ID = 16A,
VGS = 5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
75
A
V
VSD
VGS = 0V, IS = 20A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CED3060/CEU3060
100
80
100
VGS=10,8,6V
80
V
GS=4V
60
60
40
40
25 C
-55 C
20
20
0
TJ=125 C
0
3
4
0
0.5
1
1.5
2
1
2
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3600
3000
2400
1800
1200
600
ID=30A
VGS=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CED3060/CEU3060
103
10
8
VDS=15V
ID=16A
RDS(ON)Limit
10µs
102
6
100µs
1ms
4
DC
101
2
TC=25 C
TJ=150 C
Single Pulse
100
0
10-1
100
101
102
0
6
12
18
24
30
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
t1
t2
0.05
0.02
0.01
1. Rθ JA (t)=r (t) * Rθ JA
2. Rθ JA=See Datasheet
3. TJM-TA = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
相关型号：
©2020 ICPDF网 联系我们和版权申明