CEM3407L [CET]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | CEM3407L |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEM3407L
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.5V.
RDS(ON) = 115mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1
8
D1
7
D2
6
D2
5
SO-8
1
2
3
4
1
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
-30
±12
-5.1
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
-20.4
Maximum Power Dissipation
PD
2.0
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
Rev 1. 2010.Nov
http://www.cetsemi.com
Details are Subject to change without notice
1
CEM3407L
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-30
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.6
VGS = -10V, ID = -5.1A
-1.4
48
V
40
50
85
mΩ
mΩ
mΩ
Static Drain-Source
On-Resistance
VGS = -4.5V, ID = -4.6A
VGS = -2.5V, ID = -3.7A
65
115
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
905
200
160
pF
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
10
4
20
8
ns
ns
VDD = -15V, ID= -5.1A,
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
40
5
80
10
11
ns
ns
Total Gate Charge
Qg
8.5
2.5
1.5
nC
nC
nC
VDS = -15V, ID = -5.1A,
VGS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-2
-1
A
V
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM3407L
50
40
30
20
10
8
25 C
-VGS=10,8,6V
-VGS=5V
6
-VGS=4V
4
2
10
0
-VGS=3V
TJ=125 C
-55 C
2.0
0
0
2
4
6
8
10
0
0.5
10
1.5
2.5
3.0
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=-5.1A
VGS=-10V
C
iss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.6
0.7
0.8
0.9
1.0
1.1
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM3407L
10
8
VDS=-15V
ID=-4.9A
RDS(ON)Limit
101
100
10-1
10ms
100ms
1s
DC
6
4
2
TA=25 C
TJ=150 C
Single Pulse
0
10-1
100
101
0
4
8
12
16
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
t1
t2
0.05
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
10-2
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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