CEM4269 [CET]
Dual Enhancement Mode Field Effect Transistor (N and P Channel); 双增强模式场效应晶体管（ N和P沟道）
| 型号： | CEM4269 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | Dual Enhancement Mode Field Effect Transistor (N and P Channel) |
| 文件： | 总7页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
5
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.5V.
-40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V.
RDS(ON) = 65mΩ @VGS = 4.5V.
D1
8
D1
7
D2
6
D2
5
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
Surface mount Package.
SO-8
1
2
3
4
1
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Channel 1
Channel 2
-40
Units
Drain-Source Voltage
VDS
40
±20
6.1
4.9
20
V
V
Gate-Source Voltage
VGS
±20
-5.2
TA=25 C
TA=70 C
ID
Drain Current-Continuous
Drain Current-Pulsed a
-4.2
A
IDM
PD
-20
TA=25 C
TA=70 C
2.0
Maximum Power Dissipation
W
C
1.28
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
Rev 1. 2006.April
Specification and data are subject to change without notice .
http://www.cetsemi.com
1
CEM4269
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 6A
1
3
V
mΩ
mΩ
S
32
46
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
3
Ciss
Coss
Crss
1050
155
95
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
14
10
30
20
35
35
27
ns
ns
VDD = 20V, ID = 6A,
VGS = 10V, RGEN =3Ω
Turn-On Rise Time
Turn-Off Delay Time
17
ns
Turn-Off Fall Time
18
ns
Total Gate Charge
Qg
20.5
3.5
4.0
nC
nC
nC
VDS = 20V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
1.0
1.0
A
V
VSD
VGS = 0V, IS = 1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM4269
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-40
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -2A
VDS = -5V, ID = -4.8A
-1
-3
43
65
V
mΩ
mΩ
S
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
3
Ciss
Coss
Crss
1115
205
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
120
td(on)
tr
td(off)
tf
12
5
25
10
80
20
26
ns
ns
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
40
10
20
3.3
4.1
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = -20V, ID = -5A,
VGS = -10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-1.0
-1.0
A
V
VSD
VGS = 0V, IS = -1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
CEM4269
N-CHANNEL
30
20
16
12
8
VGS=10,5V
VGS=4.5V
VGS=4.0V
24
18
12
5
25 C
6
0
4
VGS=3.5
V
-55 C
TJ=125 C
2.5
0
2.0
0
1
2
3
4
3.0
3.5
4.0
4.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=6A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
CEM4269
P-CHANNEL
30
25
20
15
10
5
-VGS=10,6,5V
-VGS=4.5V
-VGS=4.0V
24
18
12
6
-VGS=3.5V
25 C
-VGS=3.0V
4
TJ=125 C
2
-55 C
0
0
0
1
2
3
5
1
3
4
5
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=-5A
VGS=-10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
CEM4269
N-CHANNEL
102
101
100
10-1
10-2
10
VDS=20V
ID=6A
RDS(ON)Limit
8
6
4
2
0
1ms
10ms
100ms
1s
5
DC
TA=25 C
TJ=150 C
Single Pulse
10-2
10-1
100
101
102
0
4
8
12
16
20
24
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 13. Gate Charge
Figure 14. Maximum Safe
Operating Area
P-CHANNEL
102
101
100
10-1
10-2
10
VDS=-20V
ID=-5A
RDS(ON)Limit
1ms
8
6
4
2
0
10ms
100ms
DC
TA=25 C
TJ=150 C
Single Pulse
10-2
10-1
100
101
102
0
4
8
12
16
20
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
CEM4269
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
5
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 18. Switching Waveforms
Figure 17. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
0.05
0.02
PDM
0.01
10-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
7
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