CEM4228 [CET]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管型号: | CEM4228 |
厂家: | CHINO-EXCEL TECHNOLOGY |
描述: | Dual N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CEM4228
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
5
40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V.
RDS(ON) = 45mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1
8
D1
7
D2
6
D2
5
SO-8
1
2
3
4
1
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
40
±20
6.3
20
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
Maximum Power Dissipation
PD
2.0
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
Rev 1. 2006.March
http://www.cetsemi.com
Specification and data are subject to change without notice .
1
CEM4228
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 6A
1
3
V
mΩ
mΩ
S
24
35
9
30
45
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
1050
155
95
pF
pF
pF
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
14
10
30
20
35
35
27
ns
ns
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
17
ns
Turn-On Fall Time
18
ns
Total Gate Charge
Qg
20.5
3.5
4.0
nC
nC
nC
VDS = 20V, ID = 6A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
1.0
1.2
A
V
VSD
VGS = 0V, IS = 1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM4228
30
24
18
12
20
16
12
8
VGS=10,5V
VGS=4.5V
VGS=4.0V
5
25 C
6
0
4
VGS=3.5
V
-55 C
TJ=125 C
2.5
0
2.0
0
1
2
3
4
3.0
3.5
4.0
4.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1500
1250
1000
750
500
250
0
ID=6A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM4228
102
101
100
10-1
10-2
10
8
VDS=20V
ID=6A
RDS(ON)Limit
1ms
10ms
100ms
1s
6
DC
4
2
TA=25 C
TJ=150 C
Single Pulse
0
10-2
10-1
100
101
102
0
4
8
12
16
20
24
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
0.05
0.02
PDM
0.01
10-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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