CZT853 [CENTRAL]

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR; 表面贴装高电流型硅NPN晶体管
CZT853
型号: CZT853
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
表面贴装高电流型硅NPN晶体管

晶体 晶体管
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中文:  中文翻译
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TM  
Central  
CZT853  
Semiconductor Corp.  
SURFACE MOUNT  
HIGH CURRENT  
SILICON NPN TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT853 type  
is  
a high current NPN silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for high voltage and high current  
amplifier applications.  
MARKING CODE: FULL PART NUMBER  
PNP complement: CZT953  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
200  
100  
6.0  
6.0  
3.0  
V
CBO  
V
V
CEO  
V
V
A
EBO  
I
C
Power Dissipation  
P
W (Note 1)  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
41.7  
°C  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
V
V
V
V
=150V  
10  
10  
1.0  
10  
nA  
nA  
μA  
nA  
V
CBO  
CB  
CE  
CB  
EB  
I
=150V, R  
≤ 1kΩ  
CER  
BE  
I
=150V, T =100°C  
A
=6.0V  
CBO  
I
EBO  
BV  
I =100μA  
200  
200  
100  
6.0  
220  
210  
110  
8.0  
22  
CBO  
C
BV  
I =10mA, R  
≤ 1kΩ  
BE  
V
CER  
C
BV  
I =10mA  
C
V
CEO  
BV  
I =100μA  
V
EBO  
E
V
I =100mA, I =5mA  
50  
mV  
mV  
mV  
V
CE(SAT)  
C
B
V
I =2.0A, I =100mA  
135  
170  
340  
1.25  
CE(SAT)  
C
B
V
I =5.0A, I =500mA  
CE(SAT)  
C B  
V
I =5.0A, I =500mA  
C B  
BE(SAT)  
2
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in (minimum)  
R1 (30-January 2006)  
TM  
CZT853  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
HIGH CURRENT  
SILICON NPN TRANSISTOR  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
h
V
V
V
V
V
V
=2.0V, I =10mA  
C
100  
100  
50  
FE  
CE  
CE  
CE  
CE  
CE  
CB  
h
=2.0V, I =2.0A  
200  
100  
30  
300  
FE  
C
h
=2.0V, I =4.0A  
C
FE  
h
=2.0V, I =10A  
20  
FE  
C
f
=10V, I =100mA, f=50MHz  
C
190  
38  
MHz  
pF  
T
C
=10V, I =0, f=1.0MHz  
ob  
E
SOT-223 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) BASE  
2) COLLECTOR  
3) EMITTER  
4) COLLECTOR  
MARKING CODE:  
FULL PART NUMBER  
R1 (30-January 2006)  

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