CZT853_10 [CENTRAL]
SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR; 表面贴装高电流NPN硅晶体管
| 型号： | CZT853_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT853
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type is
a high current NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
PNP Complement: CZT953
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
200
100
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
6.0
V
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
I
6.0
A
C
P
3.0
W
D
T
T
-65 to +150
41.7
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
μA
nA
nA
V
I
I
I
I
V
V
V
V
=150V
10
1.0
10
10
CBO
CBO
CER
EBO
CB
CB
CE
EB
=150V, T =100°C
A
=150V, R ≤1.0kΩ
BE
=6.0V
BV
BV
BV
BV
I =100μA
200
200
100
6.0
220
210
110
8.0
CBO
CER
C
I =10mA, R ≤1.0kΩ
BE
V
C
I =10mA
V
CEO
C
I =100μA
V
EBO
E
V
V
V
V
I =100mA, I =5.0mA
22
50
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =2.0A, I =100mA
135
170
340
1.25
C
B
I =5.0A, I =500mA
C
B
I =5.0A, I =500mA
C
B
h
h
h
h
V
=2.0V, I =10mA
100
100
50
CE
CE
CE
CE
CE
CB
C
V
V
V
V
V
=2.0V, I =2.0A
200
100
30
300
FE
C
=2.0V, I =4.0A
FE
C
=2.0V, I =10A
20
FE
C
f
=10V, I =100mA, f=50MHz
190
38
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
ob
E
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R2 (1-March 2010)
CZT853
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R2 (1-March 2010)
www.centralsemi.com
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