CZT900KBK [CENTRAL]
暂无描述;型号: | CZT900KBK |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | 暂无描述 晶体 晶体管 功率双极晶体管 达林顿晶体管 光电二极管 |
文件: | 总2页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
Central
CZT900K
Semiconductor Corp.
SURFACE MOUNT
NPN EXTREMELY HIGH h
FE
SILICON DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT900K
type is an NPN silicon Darlington transistor man-
ufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring extremely high gain.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
50
25
10
1.0
2.0
V
CBO
CEO
EBO
C
D
V
V
A
I
P
Power Dissipation
W
Operating and Storage
Junction Temperature
T ,T
stg
-65 to +150
62.5
°C
°C/W
J
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
CBO
TEST CONDITIONS
=30V
MIN
MAX
UNITS
I
V
100
nA
CB
I =10µA
BV
BV
BV
50
25
10
V
V
V
V
V
CBO
CEO
EBO
C
I =10mA
C
I =100µA
E
V
V
I =100mA, I =0.1mA
1.5
2.0
CE(SAT)
BE(ON)
FE
C
B
V
=5.0V, I =100mA
C
CE
CE
CE
CE
h
h
V
V
V
=5.0V, I =10mA
900,000
900,000
125
C
=5.0V, I =100mA
FE
C
f
=5.0V, I =10mA, f=100MHz
MHz
T
C
R2 (17-June 2004)
TM
CZT900K
Central
SURFACE MOUNT
Semiconductor Corp.
NPN EXTREMELY HIGH h
FE
SILICON DARLINGTON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
DIMENSIONS
INCHES
MILLIMETERS
2) COLLECTOR
3) EMITTER
4) COLLECTOR
SYMBOL
MIN
0°
MAX
10°
MIN
0°
MAX
10°
A
B
C
D
E
F
G
H
I
0.059
0.018
0.000
0.071
---
1.50
0.45
0.00
1.80
---
0.10
0.004
MARKING CODE:
15°
15°
FULL PART NUMBER
0.009
0.248
0.114
0.130
0.264
0.024
0.014
0.264
0.122
0.146
0.287
0.033
0.23
6.30
2.90
3.30
6.70
0.60
0.35
6.70
3.10
3.70
7.30
0.85
J
K
L
0.091
0.181
2.30
4.60
M
SOT-223 (REV: R3)
R2 (17-June 2004)
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