CPD64-1N3595-CG [CENTRAL]
Rectifier Diode,;
| 型号： | CPD64-1N3595-CG |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CPD64
Low Leakage Diode
Low Leakage Diode Chip
Central
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
17.5 x 17.5 MILS
8.0 MILS
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
8.0 MILS DIAMETER
Al - 30,000Å
Au - 6,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
36,890
PRINCIPAL DEVICE TYPES
CMPD3003
1N3595
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
TM
PROCESS CPD64
Central
Typical Electrical Characteristics
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (1-August 2002)
www.centralsemi.com
相关型号：
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