CPD65 [CENTRAL]
Low Leakage Diode Picoampere Diode Chip; 低漏二极管Picoampere二极管芯片
| 型号： | CPD65 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Low Leakage Diode Picoampere Diode Chip |
| 文件： | 总2页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CPD65
Low Leakage Diode
Picoampere Diode Chip
Central
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
9.5 X 9.5 MILS
7.5 MILS
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
2.5 MILS DIAMETER
Al - 30,000
Å
Au - 13,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
125,200
PRINCIPAL DEVICE TYPES
BAV45
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
TM
PROCESS CPD65
Central
Typical Electrical Characteristics
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R1 (1-August 2002)
www.centralsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明