CMPT6427TRPBFREE [CENTRAL]
暂无描述;
| 型号： | CMPT6427TRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 达林顿晶体管 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
CMPT6427
S e m ic o n d u c t o r Co r p .
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT6427 type is a NPN Silicon Darlington
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring extremely high gain.
Marking Code is C1V.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
40
40
12
500
350
V
V
V
CBO
CEO
EBO
I
P
mA
mW
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
357
C
C/W
J stg
o
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
1.0
50
UNITS
I
I
I
V
V
V
=30V
=25V
=10V
nA
µA
nA
V
V
V
V
V
V
V
CBO
CEO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
FE
FE
CB
CE
BE
BV
BV
BV
V
V
V
V
h
I =100µA
40
40
12
C
I =10mA
C
I =10µA
E
I =50mA, I =0.5mA
1.20
1.50
2.00
1.75
100K
200K
140K
C
B
B
B
C
I =500mA, I =0.5mA
C
I =500mA, I =0.5mA
C
V
=5.0V, I =50mA
CE
CE
CE
CE
CE
V
V
V
V
=5.0V, I =10mA
C
10K
20K
14K
130
h
h
f
=5.0V, I =100mA
C
=5.0V, I =500mA
C
=5.0V, IC=10mA, f=100MHz
MHz
T
188
SYMBOL
TEST CONDITIONS
MIN
MAX
7.0
15
UNITS
pF
C
V
V
V
=10V, I =0, f=1.0MHz
ob
CB
BE
CE
E
C
=0.5V, I =0, f=1.0MHz
C
pF
ib
N
F
=5.0V, I =1.0mA, R =100kΩ,
C
S
f=1.0kHz TO 15.7kHz
10
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
189
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