CMPT6428 [CENTRAL]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | CMPT6428 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
CMPT6428
CMPT6429
S e m ic o n d u c t o r Co r p .
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT6428,CMPT6429typesareNPNSilicon
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for high gain
amplifier applications.
Marking Codes are C1K and C1L
Respectively.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
CMPT6428
CMPT6429
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
60
50
55
45
CBO
CEO
EBO
6.0
200
350
I
P
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
357
C
J stg
o
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CMPT6428
CMPT6429
SYMBOL
TEST CONDITIONS
MIN
MAX
10
100
10
60
50
0.20
0.60
0.66
MIN
MAX
10
100
10
55
45
0.20
0.60
0.66
UNITS
nA
nA
nA
V
I
I
I
V
V
V
=30V
=30V
=5.0V
CBO
CEO
EBO
CBO
CEO
CE(SAT)
CE(SAT)
BE(ON)
FE
FE
FE
CB
CE
BE
BV
BV
V
V
V
h
h
h
I =100µA
C
I =1.0mA
V
V
V
V
C
I =10mA, I =0.5mA
C
B
B
C
I =100mA, I =5.0mA
C
V
=5.0V, I =1.0mA
0.56
250
250
250
250
0.56
500
500
500
500
100
CE
CE
CE
CE
CE
CE
V
V
V
V
V
=5.0V, I =10µA
C
=5.0V, I =100µA
650
700
1250
700
C
=5.0V, I =1.0mA
C
h
f
=5.0V, I =10mA
C
FE
=5.0V, I =1.0mA, f=100MHz 100
MHz
T
C
190
CMPT6428
MIN MAX
CMPT6429
SYMBOL
TEST CONDITIONS
MIN
MAX
3.0
UNITS
pF
C
C
V
V
=10V, I =0, f=1.0MHz
=0.5V, I =0, f=1.0MHz
C
3.0
8.0
ob
CB
BE
E
8.0
pF
ib
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
191
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