CMPT6428LEADFREE [CENTRAL]
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
| 型号： | CMPT6428LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPT6428
CMPT6429
www.centralsemi.com
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6428 and
CMPT6429 are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in
a surface mount package, designed for high gain
amplifier applications.
MARKING CODES: CMPT6428: C1K
CMPT6429: C1L
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
CMPT6428
CMPT6429
UNITS
V
A
Collector-Base Voltage
V
V
V
60
50
55
45
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
6.0
200
350
V
Continuous Collector Current
Power Dissipation
I
mA
mW
°C
C
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
CMPT6428
MIN MAX
CMPT6429
SYMBOL
TEST CONDITIONS
MIN
-
MAX
UNITS
nA
nA
nA
V
I
I
I
V
V
V
=30V
=30V
=5.0V
-
-
10
100
10
10
100
10
CBO
CEO
EBO
CB
CE
BE
-
-
-
BV
I =100µA
60
50
-
-
55
45
-
-
CBO
CEO
C
BV
I =1.0mA
-
-
V
C
V
V
V
I =10mA, I =0.5mA
0.20
0.60
0.20
0.60
0.66
-
V
CE(SAT)
CE(SAT)
BE(ON)
FE
C
B
I =100mA, I =5.0mA
-
-
V
C
B
V
=5.0V, I =1.0mA
0.56 0.66
0.56
500
500
500
500
100
-
V
CE
CE
CE
CE
CE
CE
CB
BE
C
h
h
h
h
V
V
V
V
V
V
V
=5.0V, I =10µA
250
250
250
250
100
-
-
C
=5.0V, I =100µA
650
-
1250
-
FE
C
=5.0V, I =1.0mA
FE
C
=5.0V, I =10mA
-
-
FE
C
f
=5.0V, I =1.0mA, f=100MHz
700
3.0
8.0
700
3.0
8.0
MHz
pF
T
C
C
C
=10V, I =0, f=1.0MHz
E
ob
ib
=0.5V, I =0, f=1.0MHz
-
-
pF
C
R5 (1-February 2010)
CMPT6428
CMPT6429
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPT6428: C1K
CMPT6429: C1L
R5 (1-February 2010)
www.centralsemi.com
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