CMPT591ETR13LEADFREE [CENTRAL]
Transistor;型号: | CMPT591ETR13LEADFREE |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:391K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CMPT591E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E type is
an Enhanced version of the industry standard 591 PNP
silicon transistor. This device is manufactured by the
epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. The CMPT591E
features Low V
designed for high current general purpose amplifier
applications.
, high h
and has been
CE(SAT)
FE,
MARKING CODE: C59
SOT-23 CASE
COMPLEMENTARY TYPE: CMPT491E
FEATURED ENHANCED SPECIFICATIONS:
♦ V
@ 1.0A = 0.6V MAX (from 0.4V MAX)
CE(SAT)
♦ h @ 500mA = 200 MIN (from 100 MIN)
FE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
V
V
A
mA
A
mW
°C
A
V
V
V
80
60
5.0
1.0
200
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
I
C
I
B
I
2.0
350
CM
P
D
T , T
stg
-65 to +150
357
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
100
UNITS
I
I
V
V
=60V
=4.0V
nA
nA
V
V
V
V
V
V
V
CBO
EBO
CB
EB
BV
BV
BV
V
I =100µA
80
60
5.0
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I =10mA
C
I =100µA
E
I =500mA, I =50mA
0.20
0.40
1.1
♦
♦
♦
C
C
B
V
V
V
h
I =1.0A, I =100mA
B
I =1.0A, I =100mA
C
B
V
=5.0V, I =1.0A
1.0
CE
CE
CE
CE
CE
CE
CB
C
V
V
V
V
V
V
=5.0V, I =1.0mA
C
=5.0V, I =500mA
200
200
50
15
150
♦
♦
FE
FE
FE
FE
h
h
h
600
C
=5.0V, I =1.0A
C
=5.0V, I =2.0A
C
f
=10V, I =50mA, f=100MHz
=10V, I =0, f=1.0MHz
MHz
pF
T
C
E
C
10
ob
♦ Enhanced specification
R3 (27-January 2010)
CMPT591E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C59
R3 (27-January 2010)
www.centralsemi.com
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