CMKD6001TRLEADFREE [CENTRAL]
Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, ULTRAMINI-6;
| 型号： | CMKD6001TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, ULTRAMINI-6 测试 光电二极管 |
| 文件： | 总2页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMKD6001
SURFACE MOUNT
TRIPLE ISOLATED
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001 type
contains three (3) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a ULTRAmini™ surface mount package,
designed for switching applications requiring extremely
low leakage.
MARKING CODE: K01
SOT-363 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
75
100
R
V
V
mA
mA
A
RRM
I
250
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
500
FRM
I
4.0
FSM
FSM
I
1.0
A
P
250
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
500
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
V =75V
MIN
MAX
500
UNITS
pA
I
R
R
BV
I =100μA
100
V
V
R
R
V
V
V
I =1.0mA
0.85
0.95
1.1
F
F
F
F
I =10mA
V
F
I =100mA
V
F
C
V =0, f=1.0MHz
2.0
pF
μs
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
3.0
rr
R
F
rr
L
R5 (9-May 2011)
CMKD6001
SURFACE MOUNT
TRIPLE ISOLATED
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: K01
R5 (9-May 2011)
www.centralsemi.com
相关型号：
CMKD6263LEADFREE
Rectifier Diode, Schottky, 3 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-6
CENTRAL
CMKD6263TR
Rectifier Diode, Schottky, 3 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-6
CENTRAL
©2020 ICPDF网 联系我们和版权申明