CMKD6263DOLEADFREE [CENTRAL]
暂无描述;
| 型号： | CMKD6263DOLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 肖特基二极管 高压 |
| 文件： | 总2页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMKD6263
Central
Semiconductor Corp.
™
ULTRAmini
TRIPLE ISOLATED
HIGH VOLTAGE
SCHOTTKY DIODE
FEATURES:
•
MEETS GALVANIC ISOLATION
REQUIREMENTS OF IEEE 1394
HIGH VOLTAGE (70V)
•
•
•
ULTRAmini™ PACKAGE
REQUIRES LESS BOARD SPACE THAN 3
INDIVIDUAL DIODES
•
LOW FORWARD VOLTAGE
SOT-363 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263 contains three Galvanically isolated, High Voltage Silicon
Schottky diodes, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching
applications requiring a low forward voltage drop. MARKING CODE: K63.
MAXIMUM RATINGS: PER DIODE (T =25°C)
A
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Continuous Forward Current
Forward Surge Current, tp=1.0 s
Power Dissipation
V
70
15
50
V
RRM
I
I
mA
mA
mW
F
FSM
P
250
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
JA
-65 to +150
500
°C
°C/W
J
Θ
ELECTRICAL CHARACTERISTICS: PER DIODE (T =25°C)
A
SYMBOL
BV
TEST CONDITIONS
I =10µA
MIN
TYP
MAX
UNITS
70
V
R
R
V
I =1.0mA
395
98
410
200
2.0
mV
nA
pF
ns
F
F
I
C
V =50V
R
R
V =0V, f=1.0MHz
R
T
t
IR=IF=10mA, Irr=1mA, RL=100Ω
5.0
rr
R0 ( 30-August 2001)
TM
CMKD6263
Central
TRIPLE ISOLATED
Semiconductor Corp.
HIGH VOLTAGE
SCHOTTKY DIODE
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
D1
D2
D3
MARKING CODE: K63
R0 ( 30-August 2001)
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