CMKD6263DOTR [CENTRAL]
Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, ULTRAMINI-6;
| 型号： | CMKD6263DOTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, Schottky, 2 Element, 0.015A, 70V V(RRM), Silicon, ULTRAMINI-6 测试 光电二极管 |
| 文件： | 总2页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMKD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE SILICON
SCHOTTKY DIODES
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263DO
contains two (2) galvanically isolated, high voltage, low
V Silicon Schottky diodes with an opposing Anode/
F
Cathode configuration, epoxy molded in a SOT-363
surface mount package. This ULTRAmini™ device has
been designed for fast switching applications requiring a
low forward voltage drop.
MARKING CODE: 63D
SOT-363 CASE
FEATURES:
• Dual Opposing (DO) Schottky Diodes
• High Voltage (70V)
• Low Forward Voltage
• Galvanically Isolated
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
V
70
15
RRM
I
mA
F
I
50
mA
FSM
P
250
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
500
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
I
V =50V
98
200
R
R
BV
I =10μA
70
V
R
R
V
I =1.0mA
395
410
2.0
5.0
mV
pF
F
F
C
V =0, f=1.0MHz
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
rr
ns
rr
R
F
L
R3 (13-January 2010)
CMKD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE SILICON
SCHOTTKY DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Cathode D2
4) Anode D2
5) NC
6) Cathode D1
MARKING CODE: 63D
R3 (13-January 2010)
www.centralsemi.com
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