BCX52-10TR [CENTRAL]

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3;
BCX52-10TR
型号: BCX52-10TR
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

放大器 晶体管
文件: 总2页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
BCX51  
BCX52  
BCX53  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR BCX51,  
BCX52, and BCX53 types are PNP Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high current general  
purpose amplifier applications.  
MARKING CODE: PLEASE SEE MARKING  
CODE TABLE ON FOLLOWING PAGE  
SOT-89 CASE  
MAXIMUM RATINGS (T =25°C)  
A
BCX51  
45  
45  
BCX52  
60  
BCX53  
100  
80  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Collector Current  
Base Current  
Peak Base Current  
Power Dissipation  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
60  
V
5.0  
V
I
1.0  
A
C
I
1.5  
A
CM  
I
100  
200  
1.2  
mA  
mA  
W
B
I
BM  
P
D
T ,T  
J stg  
-65 to +150  
104  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
10  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=30V, T =125°C  
A
=5.0V  
100  
BV  
BV  
BV  
BV  
BV  
BV  
V
V
h
h
h
I =100µA (BCX51)  
45  
60  
100  
45  
60  
80  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =100µA (BCX52)  
V
C
I =100µA (BCX53)  
V
C
I =10mA (BCX51)  
V
C
I =10mA (BCX52)  
V
C
I =10mA (BCX53)  
V
C
I =500mA, I =50mA  
0.5  
1.0  
V
C
B
V
=2.0V, I =500mA  
V
CE  
CE  
CE  
CE  
B
V
V
V
=2.0V, I =5.0mA  
63  
63  
C
=2.0V, I =150mA  
250  
160  
250  
FE  
C
=2.0V, I =150mA  
FE  
FE  
FE  
C
(BCX51-10, BCX52-10, BCX53-10)  
63  
h
h
V
=2.0V, I =150mA  
CE  
(BCX51-16, BCX52-16, BCX53-16)  
=2.0V, I =500mA  
C
100  
40  
V
CE  
C
C
f
V
=5.0V, I =10mA, f=100MHz  
50  
MHz  
T
CE  
R3 (20-May 2004)  
TM  
BCX51  
BCX52  
BCX53  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
SOT-89 CASE - MECHANICAL OUTLINE  
BOTTOM VIEW  
LEAD CODE:  
1) EMITTER  
2) COLLECTOR  
3) BASE  
DIMENSIONS  
INCHES  
DEVICE  
MARKING CODE  
MILLIMETERS  
BCX51  
BCX51-10  
BCX51-16  
BCX52  
AA  
AC  
AD  
AE  
AG  
AM  
AH  
AK  
AL  
SYMBOL MIN  
MAX  
MIN  
1.40  
MAX  
1.70  
A
B
C
D
E
F
0.055 0.067  
4°  
4°  
0.014 0.018  
0.173 0.185  
0.064 0.074  
0.146 0.177  
0.090 0.106  
0.028 0.051  
0.014 0.019  
0.017 0.023  
0.059  
0.35  
4.40  
1.62  
3.70  
2.29  
0.70  
0.36  
0.44  
0.46  
4.70  
1.87  
4.50  
2.70  
1.30  
0.48  
0.58  
BCX52-10  
BCX52-16  
BCX53  
G
H
J
K
L
BCX53-10  
BCX53-16  
1.50  
3.00  
M
0.118  
SOT-89 (REV: R4)  
R3 (20-May 2004)  

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