BCX52-16 [KEXIN]
PNP Medium Power Transistors; PNP中功率晶体管
| 型号： | BCX52-16 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Medium Power Transistors |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Medium Power Transistors
BCX51,BCX52,BCX53
Features
High current (max. 1 A).
Low voltage (max. 80 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
Rating
Unit
V
Collector-base voltage
Collector-emitter voltage
BCX51
-45
-60
BCX52
BCX53
BCX51
BCX52
BCX53
V
-100
-45
V
VCEO
V
-60
V
-80
V
Emitter-base voltage
Collector current
VEBO
IC
-5
V
-1
A
Peak collector current
Peak base current
ICM
-1.5
A
IBM
-200
1.3
mA
W
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Ptot
Tstg
Tj
-65 to +150
150
Ramb
Rth(j-a)
Rth(j-s)
-65 to +150
94
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
K/W
K/W
14
1
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SMD Type
Transistors
BCX51,BCX52,BCX53
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = -30 V, IE = 0
Min
Typ
Max
-100
-10
Unit
nA
Collector cutoff current
ìA
nA
VCB = -30 V, IE = 0; Tj = 125
VEB = -5 V, IC = 0
Emitter cutoff current
DC current gain
IEBO
hFE
-100
IC = -5 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
IC = -500 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
63
63
250
40
DC current gain BCX51-10,BCX52-10,BCX53-10
BCX51-16,BCX52-16,BCX53-16
Collector-emitter saturation voltage
Base to emitter voltage
hFE
63
160
250
-500
-1
100
VCE(sat) IC = -500 mA; IB = -50 mA
mV
V
VBE
fT
IC = -500 mA; VCE = -2 V
Transition frequency
IC = -10 mA; VCE = -5 V; f = 100 MHz
50
MHz
hFE Classification
TYPE
BCX51
AA
BCX51-10
AC
BCX51-16
Marking
AD
TYPE
BCX52
AE
BCX52-10
AG
BCX52-16
AM
Marking
TYPE
BCX53
AH
BCX53-10
AK
BCX53-16
AL
Marking
2
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