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BCX52-16-AM [ZETEX]

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS; SOT89 PNP硅平面中功率晶体管
BCX52-16-AM
型号： BCX52-16-AM
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
SOT89 PNP硅平面中功率晶体管

晶体 晶体管 局域网
文件： 总1页 (文件大小：22K)
中文：  中文翻译
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BCX51  
BCX52  
BCX53  
SOT89 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTORS  
ISSUE 3 – FEBRUARY 1996  
✪
COMPLEMENTARY TYPE –  
BCX51 – BCX54  
BCX52 – BCX55  
BCX53 – BCX56  
C
PARTMARKING DETAILS –  
BCX51  
– AA  
BCX52  
– AE  
BCX53  
– AH  
E
BCX51-10 – AC  
BCX51-16 – AD  
BCX52-10 – AG  
BCX52-16 – AM  
BCX53-10 – AK  
BCX53-16 – AL  
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VCBO  
VCEO  
VEBO  
ICM  
BCX51  
-45  
BCX52  
BCX53  
-100  
UNIT  
V
Co lle cto r-Ba s e Vo lta g e  
-60  
-60  
-5  
Co lle cto r-Em itte r Vo lta g e  
Em itte r-Ba s e Vo lta g e  
-45  
-80  
V
V
Pe ak Pu ls e Cu rre n t  
-1.5  
-1  
A
Co n tin u o u s Co lle cto r Cu rre n t  
Po w er Dis s ip a tio n a t Ta m b=25°C  
IC  
A
Pto t  
1
W
°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Tj:Ts tg  
-65 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. TYP. MAX. UNIT CONDITIONS .  
Co lle cto r-Ba s e  
Bre a kd o w n  
Vo lta g e  
BCX53  
BCX52  
BCX51  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-100  
-60  
-45  
V
V
V
IC =-100µA  
IC =-100µA  
IC =-100µA  
Co lle cto r-Em itte r BCX53  
Bre a kd o w n  
Vo lta g e  
-80  
-60  
-45  
V
IC =-10m A*  
IC =-10m A*  
IC =-10m A*  
BCX52  
BCX51  
Em itte r-Ba s e  
-5  
V
IE =-10µA  
Bre a kd o w n Vo ltag e  
Co lle cto r Cu t-Off Cu rre n t ICBO  
-0.1  
-20  
VCB =-30V  
µA  
µA  
V
CB =-30V, Ta m b =150°C  
Em itte r Cu t-Off Cu rren t  
IEBO  
-20  
n A  
V
VEB =-4V  
Co lle cto r-Em itte r  
S atu ra tio n Vo lta g e  
VCE(s a t)  
-0.5  
IC =-500m A, IB =-50m A*  
IC =-500m A, VCE =-2V*  
Bas e -Em itte r  
Tu rn -On Vo ltag e  
VBE(o n )  
h FE  
-1.0  
V
S tatic Fo rw a rd Cu rren t  
Tran s fe r Ra tio  
25  
40  
25  
63  
IC =-5m A, VCE =-2V*  
IC =-150m A, VCE =-2V*  
IC =-500m A, VCE =-2V*  
IC =-150m A, VCE =-2V*  
IC =-150m A, VCE =-2V*  
250  
-10  
-16  
160  
250  
100  
Tran s itio n Fre q u e n cy  
Ou tp u t Ca p a cita n ce  
fT  
150  
MHz IC =-50m A, VCE =-10V,  
f=100MHz  
Co b o  
25  
p F  
VCB =-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
3 - 34  

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