UPA831TC [CEL]

NPN SILICON EPITAXIAL TWIN TRANSISTOR; NPN硅外延晶体管晶体管


型号：	UPA831TC
厂家：	CALIFORNIA EASTERN LABS
描述：	NPN SILICON EPITAXIAL TWIN TRANSISTOR NPN硅外延晶体管晶体管晶体晶体管光电二极管放大器
文件：	总2页 (文件大小：19K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TC

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE OUTLINE:

1.5 mm x 1.1 mm, 33% smaller than conventional

SOT-363 package

Package Outline TC

(TOP VIEW)

1.50±0.1

•

LOW HEIGHT PROFILE:

Just 0.55 mm high

1.10±0.1

+0.1

0.20

-0.05

FLAT LEAD STYLE:

Reduced lead inductance improves electrical

performance

PIN OUT

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

1.50±0.1

0.48

•

TWO DIFFERENT DIE TYPES:

Q1 - Ideal oscillator transistor

Q2 - Ideal buffer amplifier transistor

0.96

DESCRIPTION

+0.1

-0.05

0.11

0.55±0.05

The UPA831TC contains one NE856 and one NE681 NPN

high frequency silicon bipolar chip. NEC's new ultra small TC

package is ideal for all portable wireless applications where

reducingboardspaceisaprimeconsideration. Eachtransistor

chip is independently mounted and easily configured for oscil-

lator/buffer amplifier and other applications.

Note: Pin 1 is the lower left most pin

as the package lettering is oriented

and read left to right.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA831TC

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

DC Current Gain¹at VCE = 3 V, IC = 7 mA

140

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Feedback Capacitance²at VCB = 3 V, lE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

GHz

3.0

4.5

0.7

Cre

|S21E|²

1.5

2.5

1.2

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

0.8

DC Current Gain¹at VCE = 3 V, IC = 7 mA

150

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

GHz

4.5

7.0

Cre

|S21E|²

0.9

2.7

1.4

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to

guard pin of capacitances meter.

California Eastern Laboratories

UPA831TC

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKAGING

SYMBOLS

PARAMETERS

UNITS

RATINGS

UPA831TC-T1

3000

Tape & Reel

1.5

VCBO

VCEO

VEBO

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

100

Total Power Dissipation¹

TBD TBD

TBD

Junction Temperature

Storage Temperature

°C

150

-65 to +150

TSTG

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

1/99

DATA SUBJECT TO CHANGE WITHOUT NOTICE