UPA831TF [NEC]
NPN SILICON EPITAXIAL TWIN TRANSISTOR; NPN硅外延晶体管晶体管型号: | UPA831TF |
厂家: | NEC |
描述: | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
文件: | 总9页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF
FEATURES
OUTLINE DIMENSIONS (Units in mm)
•
LOW NOISE:
Package Outline TS06 (Top View)
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
2.1 ± 0.1
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
1.25 ± 0.1
•
HIGH GAIN:
Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
1
2
6
5
0.65
+0.10
- 0.05
2.0 ± 0.2
0.22
(All Leads)
1.3
Q2: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
3
4
•
•
6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE856, Q2: NE681)
0.6 ± 0.1
0.45
0.13 ± 0.05
0 ~ 0.1
DESCRIPTION
Note:
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
TheUPA831TFhastwodifferentbuilt-intransistorsforlowcost
amplifierandoscillatorapplicationsintheVHF/UHFband. Low
noise figures, high gain, high current capability, and medium
output give this device high dynamic range with excellent
linearity for two-stage amplifiers. This device is also ideally
suited for use in a VCO/buffer amplifier application. The
thinner package style allows for higher density designs.
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA831TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
µA
MIN
TYP
MAX
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
1
1
µA
DC Current Gain1 at VCE = 3 V, IC = 7 mA
100
3.0
145
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
pF
4.5
0.7
9
Cre
|S21E|2
1.5
2.5
dB
7
NF
dB
1.2
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
µA
0.8
0.8
150
DC Current Gain1 at VCE = 3 V, IC = 7 mA
70
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
pF
4.5
7.0
0.45
12
Cre
|S21E|2
0.9
2.7
dB
10
NF
dB
1.4
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA831TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
Q1
20
Q2
20
VCBO
VCEO
VEBO
IC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
V
12
10
V
3
1.5
65
mA
mW
100
150
PT
Total Power Dissipation1
150
2002
TJ
Junction Temperature
Storage Temperature
°C
°C
150
150
TSTG
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. When operating both devices, the power dissipation for
either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q2
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
Free Air
Q1 + Q2 total
Q1+ Q2 total
200
100
200
Q2 when using 1 element
Q1 when using 1 element
Q2 when using
2 elements
Q1 when using
2 elements
100
0
50
100
150
0
50
100
150
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
20
VCE = 3 V
VCE = 3 V
10
10
0
0.5
1.0
0
0.5
1.0
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
UPA831TF
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
Q2
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
25
25
lB=160 µA
140 µA
20
15
20
15
160 µA
140 µA
120 µA
100 µA
80 µA
120 µA
100 µA
10
5
10
5
60 µA
80 µA
60 µA
40 µA
40 µA
20 µA
lB=20 µA
0
5
10
0
0.5
1.0
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
200
100
V
CE = 3 V
VCE = 3 V
50
50
20
10
20
10
0.5
1
5
10
50
0.5
1
5
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
20
10
5
10
VCE = 3 V
f = 1 GHz
VCE = 3 V
f = 1.0 GHz
8
6
4
2
1
2
0
0.5
1
5
10
50
0.5
1
5
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
UPA831TF
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
Q2
INSERTION POWER GAIN vs.
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT
15
15
VCE = 3 V
f = 1 GHz
VCE = 3 V
f = 1.0 GHz
10
10
5
0
5
0
0.5
1
5
10
50 100
0.5
1
5
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs.
NOISE FIGURE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT
6
5
VCE = 3 V
V
CE = 3 V
lc = 1GHz
lc = 1GHz
4
3
2
4
2
0
1
0
0.5
1.0
5.0
10
50
100
0.5
1.0
5.0
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
FREQUENCY
24
20
25
V
CE = 3 V
V
CE = 3 V
lc = 7 mA
lc = 7 mA
20
16
12
15
10
8
4
5
0
0
0.1
0.2
0.5
1.0
2.0
5.0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency, f (GHz)
Frequency, f (GHz)
UPA831TF
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
Q2
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
5.0
2.0
f = 1 MHz
f = 1 MHz
2.0
1.0
0.5
1.0
0.5
0.2
0.1
0.2
0.1
1
2
5
10
20
50
1
2
5
10
20
50
Collector to Base Voltage, VCB (V)
Collector to Base Voltage, VCB (V)
TYPICAL SCATTERING PARAMETERS
Q1
VCE = 3 V, IC = 1 mA, Z0 = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.97
0.94
0.90
0.86
0.82
0.79
0.76
0.74
0.72
0.71
0.70
0.71
0.72
0.75
0.78
0.81
-20.45
-40.17
-59.57
-77.29
-94.54
-110.15
-124.06
-136.61
-148.19
-158.16
-175.72
162.88
151.31
136.95
117.97
103.52
2.38
2.31
2.25
2.10
2.03
1.92
1.80
1.69
1.59
1.48
1.30
1.09
0.97
0.83
0.66
0.54
162.85
148.19
135.26
123.99
113.53
104.19
95.54
87.82
80.80
74.49
63.28
49.18
41.14
31.08
18.15
10.02
0.04
0.08
0.11
0.13
0.15
0.16
0.16
0.16
0.16
0.16
0.15
0.13
0.12
0.11
0.13
0.19
76.56
63.82
52.97
43.63
36.13
29.28
23.65
19.18
15.47
12.65
8.37
0.98
0.94
0.89
0.83
0.70
0.74
0.70
0.67
0.65
0.64
0.61
0.59
0.58
0.57
0.57
0.58
-8.59
-16.05
-22.20
-27.30
-31.16
-34.67
-37.55
-40.06
-42.54
-44.88
-49.79
-57.73
-64.34
-74.83
-95.23
-118.13
7.58
11.56
23.61
45.08
50.48
Q2
VCE = 3 V, IC = 1 mA, Z0 = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.98
0.96
0.93
0.90
0.87
0.83
0.79
0.75
0.71
0.68
0.62
0.57
0.55
0.55
0.57
0.60
-10.86
-21.63
-32.48
-42.91
-53.63
-64.20
-74.42
-84.40
-94.53
-103.53
-121.59
-145.60
-159.13
-177.12
159.65
142.54
2.42
2.38
2.38
2.31
2.29
2.25
2.19
2.13
2.10
2.02
1.90
1.71
1.59
1.44
1.24
1.08
168.67
158.63
149.52
140.98
133.17
125.99
118.72
112.19
105.36
99.41
88.26
73.71
65.42
54.11
37.59
23.49
0.03
0.05
0.08
0.10
0.11
0.13
0.14
0.14
0.15
0.15
0.16
0.16
0.16
0.16
0.17
0.21
82.29
75.10
68.06
61.46
56.13
50.41
46.33
42.16
38.75
36.15
32.01
29.15
29.10
32.04
41.52
47.77
0.99
0.97
0.94
0.91
0.87
0.83
0.80
0.76
0.73
0.70
0.65
0.58
0.55
0.51
0.44
0.39
-5.27
-10.32
-15.03
-19.41
-22.87
-26.69
-29.29
-32.26
-34.46
-36.40
-40.20
-45.97
-49.98
-57.16
-73.66
-97.59
UPA831TF
TYPICAL SCATTERING PARAMETERS
Q1
VCE = 3 V, IC = 3 mA, Z0 = 50 Ω
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.90
0.83
0.75
0.70
0.65
0.62
0.60
0.59
0.59
0.59
0.59
0.61
0.63
0.66
0.70
0.75
-29.24
-56.61
-82.38
6.73
6.15
5.66
5.08
4.52
4.00
3.57
3.21
2.90
2.65
2.25
1.82
1.61
1.38
1.10
0.91
156.08
138.83
124.38
112.82
102.90
94.98
88.01
82.00
76.74
71.87
62.99
51.53
44.61
35.44
21.83
10.82
0.04
0.07
0.09
0.10
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.13
0.14
0.15
0.19
0.22
70.94
55.92
46.12
39.45
35.38
32.50
30.78
30.02
29.88
30.03
31.42
34.65
36.98
39.97
42.08
41.10
0.93
0.82
0.79
0.61
0.54
0.49
0.45
0.42
0.40
0.38
0.36
0.33
0.32
0.31
0.31
0.33
-16.82
-29.40
-37.28
-42.73
-45.93
-48.61
-50.55
-52.19
-54.08
-55.78
-59.72
-67.05
-73.46
-84.11
-105.22
-128.59
-104.35
-122.97
-138.09
-150.60
-161.35
-170.46
-178.60
167.50
150.72
141.52
130.09
114.27
102.28
Q2
VCE = 3 V, IC = 3 mA, Z0 = 50 Ω
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.92
0.87
0.80
0.73
0.65
0.59
0.53
0.49
0.45
0.43
0.40
0.39
0.39
0.41
0.45
0.51
-16.40
-32.07
-47.67
-62.40
-76.67
6.78
6.39
6.14
5.78
5.43
5.01
4.64
4.29
3.96
3.67
3.20
2.67
2.41
2.11
1.77
1.52
162.42
149.12
137.78
127.84
118.67
111.01
103.74
97.61
92.07
87.21
78.56
67.56
61.15
52.04
38.21
25.73
0.03
0.05
0.06
0.08
0.09
0.09
0.10
0.11
0.11
0.12
0.13
0.15
0.16
0.18
0.22
0.27
78.93
69.04
61.85
56.50
53.06
50.34
49.05
48.17
47.67
47.43
47.88
48.47
48.92
49.48
48.34
45.20
0.96
0.90
0.81
0.74
0.67
0.61
0.57
0.53
0.50
0.47
0.43
0.37
0.34
0.30
0.23
0.16
-10.26
-19.01
-25.29
-30.21
-33.01
-35.62
-36.97
-38.30
-39.13
-39.97
-41.51
-44.78
-47.49
-52.76
-67.38
-94.47
-89.52
-101.31
-112.10
-121.85
-130.75
-146.82
-166.97
-177.84
168.36
150.91
138.06
UPA831TF
TYPICAL SCATTERING PARAMETERS
Q1
VCE = 3 V, IC = 5 mA, Z0 = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
MAG
0.84
0.74
0.65
0.60
0.57
0.55
0.54
0.54
0.54
0.54
0.55
0.58
0.60
0.63
0.68
0.72
ANG
-37.26
-70.72
MAG
10.52
9.17
7.97
6.76
5.74
4.95
4.33
3.85
3.44
3.13
2.63
2.12
1.88
1.60
1.28
1.06
ANG
150.99
131.67
116.47
105.34
96.73
89.92
84.13
78.92
74.44
70.19
62.35
51.94
45.70
37.07
23.75
12.85
MAG
0.04
0.06
0.07
0.08
0.09
0.09
0.10
0.10
0.11
0.11
0.12
0.14
0.15
0.17
0.21
0.24
ANG
MAG
0.89
0.72
0.58
0.48
0.42
0.37
0.34
0.31
0.30
0.28
0.26
0.23
0.22
0.22
0.22
0.25
ANG
67.19
52.38
44.81
41.17
39.62
38.83
38.89
39.22
40.21
40.98
42.12
43.44
44.06
43.80
41.92
38.40
-23.52
-38.66
-46.62
-51.47
-54.25
-56.48
-58.22
-59.93
-61.82
-63.63
-68.02
-76.52
-84.21
-96.22
-120.22
-144.01
-100.04
-122.73
-139.98
-153.16
-163.95
-173.01
179.14
172.20
160.12
145.43
137.23
126.82
112.54
101.25
Q2
VCE = 3 V, IC = 5 mA, Z0 = 50 Ω
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.87
0.78
0.68
0.58
0.50
0.44
0.40
0.37
0.35
0.34
0.33
0.33
0.34
0.37
0.42
0.48
-21.14
-40.83
-60.06
-77.36
-92.42
-105.23
-116.35
-126.53
-135.66
-143.84
-158.47
-176.15
174.48
162.68
147.53
136.02
10.54
9.60
8.88
8.02
7.14
6.32
5.64
5.09
4.61
4.22
3.61
2.98
2.67
2.33
1.94
1.66
157.81
142.32
129.34
118.40
109.32
102.30
96.25
91.05
86.42
82.27
74.93
65.28
59.53
51.31
38.54
26.58
0.02
0.04
0.06
0.07
0.07
0.08
0.09
0.10
0.10
0.11
0.13
0.15
0.17
0.19
0.24
0.28
75.42
65.90
60.29
56.88
55.62
54.62
54.78
54.68
54.91
55.25
55.53
55.16
54.56
53.22
49.58
44.44
0.93
0.83
0.71
0.62
0.55
0.50
0.46
0.43
0.41
0.38
0.35
0.30
0.27
0.23
0.16
0.08
-14.27
-24.65
-30.56
-34.29
-35.99
-37.17
-37.50
-38.10
-38.22
-38.54
-39.34
-41.72
-43.96
-48.42
-62.15
-95.21
UPA831TF
TYPICAL SCATTERING PARAMETERS
Q1
VCE = 3 V, IC = 7 mA, Z0 = 50 Ω
FREQUENCY
S11
S21
S12
S22
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
MAG
0.79
0.67
0.59
0.55
0.52
0.52
0.51
0.51
0.52
0.52
0.54
0.56
0.58
0.61
0.66
0.71
ANG
-44.32
-82.73
MAG
13.71
11.45
9.41
7.67
6.37
5.44
4.71
4.17
3.73
3.38
2.83
2.28
2.02
1.72
1.37
1.14
ANG
146.95
126.15
111.03
100.87
93.24
87.80
81.95
77.28
73.14
69.28
61.95
52.20
46.08
37.91
25.17
14.21
MAG
0.04
0.05
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.11
0.12
0.14
0.16
0.18
0.22
0.25
ANG
MAG
0.84
0.64
0.49
0.40
0.35
0.31
0.28
0.26
0.24
0.23
0.21
0.19
0.18
0.18
0.19
0.23
ANG
-28.71
-44.98
-52.71
-57.18
-59.82
-62.08
-63.86
-65.85
-67.95
-70.01
-75.34
-85.78
-94.72
-108.59
-134.34
-157.18
64.19
50.70
45.71
44.09
43.89
44.29
44.90
45.68
46.53
47.24
47.51
47.48
47.00
45.50
41.98
37.45
-113.49
-134.72
-150.16
-161.98
-171.56
-179.64
173.30
167.06
156.05
142.49
134.85
125.10
111.51
100.68
Q2
VCE = 3 V, IC = 3 mA, Z0 = 50 Ω
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.82
0.70
0.58
0.48
0.41
0.36
0.33
0.31
0.30
0.29
0.29
0.30
0.32
0.35
0.41
0.47
-25.53
-48.93
-70.56
13.87
12.25
10.84
9.35
8.02
6.95
6.11
5.46
4.92
4.48
3.81
3.12
2.80
2.43
2.02
1.73
154.03
136.79
122.67
111.78
103.61
97.46
92.14
87.62
83.59
79.82
73.17
64.12
58.72
50.86
38.61
26.84
0.02
0.04
0.05
0.06
0.07
0.08
0.08
0.09
0.10
0.11
0.13
0.15
0.17
0.20
0.24
0.29
74.13
64.47
60.39
58.88
58.61
58.55
58.93
59.18
59.34
59.51
59.39
58.27
57.18
55.01
50.13
44.44
0.90
0.76
0.63
0.55
0.49
0.44
0.41
0.38
0.36
0.34
0.31
0.27
0.24
0.20
0.13
0.05
-17.35
-28.32
-33.36
-35.74
-36.45
-36.82
-36.53
-36.68
-36.49
-36.62
-37.07
-39.05
-41.01
-44.79
-57.04
-97.11
-88.76
-103.39
-115.73
-126.32
-135.93
-144.44
-152.17
-165.53
178.39
169.88
159.36
145.66
135.02
UPA831TF
TYPICAL SCATTERING PARAMETERS
Q2
VCE = 3 V, IC = 10 mA, Z0 = 50 Ω
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
0.75
0.60
0.46
0.38
0.33
0.30
0.28
0.27
0.27
0.26
0.27
0.29
0.30
0.34
0.40
0.46
-31.69
-59.65
-83.01
18.15
15.27
12.63
10.36
8.65
7.39
6.44
5.71
5.13
4.66
3.95
3.23
2.89
2.51
2.08
1.77
149.45
130.00
115.55
105.74
98.71
93.39
88.76
84.77
81.10
77.73
71.54
63.03
58.07
50.27
38.52
27.15
0.02
0.04
0.05
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.13
0.16
0.17
0.20
0.25
0.30
72.88
64.34
61.90
62.10
62.36
62.91
63.12
63.61
63.35
63.27
62.53
60.56
58.92
56.28
50.51
44.27
0.86
0.68
0.56
0.48
0.43
0.39
0.36
0.34
0.32
0.31
0.28
0.24
0.22
0.17
0.10
0.02
-20.87
-31.44
-34.79
-35.76
-35.53
-35.09
-34.48
-34.25
-33.89
-33.85
-34.09
-35.98
-37.60
-40.62
-50.92
-101.29
-100.85
-114.89
-126.72
-136.66
-145.74
-153.56
-160.53
-172.68
173.18
165.76
156.32
143.83
133.92
ORDERING INFORMATION
BUILT-IN TRANSISTORS
PART NUMBER
QUANTITY
PACKAGING
Tape & Reel
Q1
Q2
NE68130
UPA831TF-T1
3000
3-pin small mini mold part No.
NE85630
The UPA834TF features the Q1 and Q2 in inverted positions.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -2/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号:
UPA831TF(Q2)
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, TS06, 6 PIN
NEC
UPA831TFFB
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6
NEC
UPA831TFFB-T1
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6
NEC
UPA832
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC
UPA832TF
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC
UPA832TF(Q2)
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, TS06, 6 PIN
NEC
UPA832TF(QI)
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, TS06, 6 PIN
NEC
UPA832TF-T1
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
NEC
UPA832TFFB
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6
NEC
UPA832TFFB-T1
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, MINIMOLD PACKAGE-6
NEC
©2020 ICPDF网 联系我们和版权申明