UPA831TD-T3-FB [RENESAS]
RF SMALL SIGNAL TRANSISTOR;型号: | UPA831TD-T3-FB |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | RF SMALL SIGNAL TRANSISTOR |
文件: | 总8页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 1010
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PRELIMINARY DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA831TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
•
•
2 different built-in transistors (2SC5006, 2SC5007)
Low noise
Q1: NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
Q2: NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
High gain
Q1: S21e2 = 9.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
Q2: S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
6-pin lead-less minimold (M16, 1208 package)
•
•
BUILT-IN TRANSISTORS
Q2
3-pin ultra super minimold part No.
2SC5007
ORDERING INFORMATION
Part Number
Q
Supplying Form
µPA831TD
50 p
de embossed taping
µPA831TD-T3
1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluact your nearby sales office.
The unit sample qpcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10468EJ01V0DS (1st edition)
Date Published February 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004
µPA831TD
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Q1
20
Q2
20
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
V
V
12
10
3
1.5
65
V
100
190
mA
mW
Note
Total Power Dissipation
Ptot
190
210 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
2
Preliminary Data Sheet PU10468EJ01V0DS
µPA831TD
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 10 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
µA
µA
−
1.0
1.0
140
−
IEBO
VEB = 1 V, IC = 0 mA
−
−
Note 1
hFE
VCE = 3 V, IC = 7 mA
70
3
−
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 3 V, IC = 7 mA, f = 1 GHz
4.5
9.0
1.2
GHz
dB
dB
S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz
7.0
−
−
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz,
ZS = Zopt
2.5
Note 2
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.7
1.5
pF
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 10 V, IE = 0 mA
TYP.
−
MAX.
0.8
0.8
150
−
Unit
µA
µA
−
IEBO
VEB = 1 V, IC = 0 mA
Note 1
hFE
VCE = 3 V, IC = 7 m
10.0
−
−
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 3 V, IC =
7
GHz
dB
dB
S21e2 VCE = 3 V
12.0
1.4
−
NF
VCE
Z
2.7
Note
Reverse Transfer Capacitance
Cre
Hz
−
−
0.9
pF
Notes 1. Pulse measurement: P
2. Collector to base carounded
hFE CLASSIFICATION
Rank
F
Marking
nC
hFE Value of Q1
hFE Value of Q2
70 to 140
70 to 150
3
Preliminary Data Sheet PU10468EJ01V0DS
µPA831TD
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm)
1.0 0.05
+0.07
0.8
–0.05
(Top View)
Q1
C1
E1
C2
B1
E2
B2
1
2
3
6
5
4
Q2
ECTIONS
Q1)
Q1)
tor (Q2)
se (Q2)
Emitter (Q2)
. Base (Q1)
4
Preliminary Data Sheet PU10468EJ01V0DS
µPA831TD
•
The information in this document is current as of February, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any forany means without prior
written consent of NEC. NEC assumes no responsibility for any errors ear in this document.
NEC does not assume any liability for infringement of patents, copyrictual property rights of
third parties by or arising from the use of NEC semiconductor pument or any other
liability arising from the use of such products. No license, exgranted under any
patents, copyrights or other intellectual property rights of NE
•
•
•
•
•
Descriptions of circuits, software and other related infoprovided for illustrative
purposes in semiconductor product operation ane incorporation of these
circuits, software and information in the design shall be done under the full
responsibility of customer. NEC assumes no rincurred by customers or third
parties arising from the use of these circuits,
While NEC endeavours to enhance the quaEC semiconductor products, customers
agree and acknowledge that the possibot be eliminated entirely. To minimize
risks of damage to property or o persons arising from defects in NEC
semiconductor products, customent safety measures in their design, such as
redundancy, fire-containment,
NEC semiconductor productwing three quality grades:
"Standard", "Special" anquality grade applies only to semiconductor products
developed based on lity assurance program" for a specific application. The
recommended applproduct depend on its quality grade, as indicated below.
Customers must ceach semiconductor product before using it in a particular
application.
"Standard": Computers, nt, communications equipment, test and measurement equipment, audio
and visual equome electronic appliances, machine tools, personal electronic equipment
and industrial rob
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
5
Preliminary Data Sheet PU10468EJ01V0DS
µPA831TD
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0401
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