NESG2031M16-T3-A [CEL]
HIGH FREQUENCY TRANSISTOR; 高频三极管
| 型号： | NESG2031M16-T3-A |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | HIGH FREQUENCY TRANSISTOR |
| 文件： | 总3页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M16
FEATURES
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
•
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
•
HIGH MAXIMUM STABLE GAIN:
MSG= 21.5 dB at 2 GHz
•
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2031M16
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
1.3
Ga
NF
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
dB
dB
10.0
0.8
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
1.1
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
15.0
17.0
MSG
|S21E|2
P1dB
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
dB
19.0
16.0
21.5
18.0
13
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 20 mA, f = 2 GHz
dBm
OIP3
fT
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 20 mA, f = 2 GHz dBm
23
25
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
GHz
pF
20
Cre
0.15
0.25
100
100
260
ICBO
IEBO
hFE
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain3 at VCE = 2 V, IC = 5 mA
130
190
Notes:
S21
S12
1. MSG =
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
California Eastern Laboratories
NESG2031M16
OUTLINE DIMENSIONS (Units in mm)
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
UNITS
RATINGS
13.0
5.0
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
V
V
1.5
mA
mW
35
PT2
Total Power Dissipation
175
TJ
Junction Temperature
Storage Temperature
°C
°C
150
TSTG
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
1.0±0.05
+0.07
-0.05
0.8
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG2031M16-T3-A 10 K pcs
reel
Pin 1 (Collector), Pin 6
(Emitter) face the perfora-
tion side of the tape
PIN CONNECTIONS
4. Base
5. Emitter
6. Emitter
1. Collector
2. Emitter
3. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/13/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
Mercury
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Not Detected
(*)
Not Detected
Cadmium
Hexavalent Chromium
PBB
Not Detected
Not Detected
Not Detected
Not Detected
PBDE
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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