NE66219-T1-A [CEL]
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG);
| 型号： | NE66219-T1-A |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) |
| 文件： | 总6页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
<R> ORDERING INFORMATION
Part Number Order Number
Package
Quantity
Supplying Form
• 8 mm wide embossed taping
NEC66219
2SC5606
NE66219-A
2SC5606-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
50 pcs (Non reel)
NE66219-T1 NE66219-T1-A
2SC5606-T1 2SC5606-T1-A
3 kpcs/reel
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
15
3.3
V
1.5
V
35
mA
mW
C
C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
115
Tj
150
Tstg
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE66219 / 2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
–
–
–
–
200
200
100
nA
nA
–
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 5 mA
Note 1
hFE
60
80
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
10
–
21
12.5
1.2
–
–
GHz
dB
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz,
NF
1.5
dB
ZS = Zopt
Note 2
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
–
–
0.21
14
0.3
–
pF
dB
dB
MAGNote 3 VCE = 2 V, IC = 20 mA, f = 2 GHz
MSGNote 4 VCE = 2 V, IC = 20 mA, f = 2 GHz
15
–
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
S21
(K – (K2 – 1) )
3. MAG =
S12
S21
4. MSG =
S12
hFE CLASSIFICATION
Rank
Marking
hFE
FB/YFB
UA
<R>
60 to 100
2
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C)
<R>
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
Remark The graph indicates nominal characteristics.
<R>
S-PARAMETERS
5
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
6
Data Sheet PU10781EJ01V0DS
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