NE662M03-FB-A_技术文档

DATA SHEET

NPN SILICON RF TRANSISTOR

NE662M03

NPN SILICON RF TRANSISTOR FOR

LOW NOISE HIGH-GAIN AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Ideal for low noise high-gain amplification and high-frequency oscillation

NF = 1.2 dB TYP. @ V^CE= 2 V, I^C= 5 mA, f = 2 GHz

•

MSG = 15 dB TYP. @ V^CE= 2 V, I^C= 20 mA, f = 2 GHz

S^21e²= 12.5 dB TYP. @ V^CE= 2 V, I^C= 20 mA, f = 2 GHz

f^T= 21 GHz TYP. @ V^CE= 2 V, I^C= 20 mA, f = 2 GHz

Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE662M03

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

NE662M03-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

V

15

3.3

V

1.5

V

35

mA

mW

°C

P

tot ^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10324EJ02V0DS (2nd edition)

Date Published May 2003 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2002, 2003

NE662M03

ELECTRICAL CHARACTERISTICS (T^A= +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I^CBO

I^EBO

h

V^CB= 5 V, I^E= 0 mA

V^EB= 1 V, I^C= 0 mA

= 2 V, I = 5 mA

–

200

100

nA

–

FE ^{Note 1}

CE

C

V

60

80

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

f^T

V^CE= 2 V, I^C= 20 mA, f = 2 GHz

= 2 V, I = 20 mA, f = 2 GHz

–

10.0

–

21

12.5

1.2

–

GHz

dB

2

S

21e

V

CE

C

V^CE= 2 V, I^C= 5 mA, f = 2 GHz,

Z^S= Z^opt

NF

1.5

dB

Reverse Transfer Capacitance

Maximum Available Power Gain

Maximum Stable Power Gain

C

re ^{Note 2}

V

CB

= 2 V, I = 0 mA, f = 1 MHz

E

–

0.21

14

0.3

–

pF

dB

MAG^{Note 3}V^CE= 2 V, I^C= 20 mA, f = 2 GHz

MSG^{Note 4}V^CE= 2 V, I^C= 20 mA, f = 2 GHz

15

–

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

S²¹

S¹²

(K – √ (K²– 1) )

3. MAG =

S²¹

S¹²

4. MSG =

h^FECLASSIFICATION

Rank

FB

UF

Marking

h^FEValue

60 to 100

2

Data Sheet PU10324EJ02V0DS

NE662M03

TYPICAL CHARACTERISTICS (T^A= +25°C ,unless otherwise specified)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

0.5

200

150

f = 1 MHz

Mounted on Glass Epoxy PCB

(1.08 cm²× 1.0 mm (t) )

0.4

0.3

0.2

0.1

115

100

50

0

25

50

75⁷⁸

100

125

(˚C)

150

0

2

4

6

8

10

Collector to Base Voltage VCB (V)

Ambient Temperature T

A

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

10

1

100

10

1

V

CE = 1 V

VCE = 2 V

0.1

0.01

0.001

0.01

0.001

0.0001

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

40

35

30

25

20

15

10

5

500

µ

A

450

400

350

300

250

200

µ

A

150

µ

A

100

µ

A

I

B

= 50

0

1

2

3

4

Collector to Emitter Voltage VCE (V)

3

Data Sheet PU10324EJ02V0DS

NE662M03

DC CURRENT GAIN vs.

COLLECTOR CURRENT

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

100

10

1 000

100

10

V

CE = 1 V

VCE = 2 V

0.1

1

10

(mA)

100

0.1

1

10

(mA)

100

Collector Current I

C

Collector Current I

C

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

25

20

25

20

V

CE = 1 V

V

CE = 2 V

f = 2 GHz

15

10

5

15

10

5

0

1

10

100

1

10

100

Collector Current I

C

(mA)

Collector Current I (mA)

C

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

35

30

25

20

15

10

V

CE = 1 V

VCE = 2 V

I

C

= 20 mA

I = 20 mA

C

MSG

MAG

2

|S21e

|

2

|S21e

|

5

0

5

0

0.1

1

10

0.1

1

10

Frequency f (GHz)

4

Data Sheet PU10324EJ02V0DS

NE662M03

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

20

15

10

5

25

20

15

10

5

V

CE = 1 V

VCE = 2 V

f = 1 GHz

MSG

MAG

MSG

MAG

2

|S21e|

|S21e

|

0

1

10

Collector Current I

100

1

10

Collector Current I (mA)

100

C

(mA)

C

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

20

15

10

5

25

20

15

10

5

V

CE = 1 V

VCE = 2 V

f = 2 GHz

MSG

MAG

2

|S21e

|

|S21e

|

0

1

10

Collector Current I

100

1

10

Collector Current I (mA)

100

C

(mA)

C

INSERTION POWER GAIN, MAG

vs. COLLECTOR CURRENT

INSERTION POWER GAIN, MAG

vs. COLLECTOR CURRENT

20

15

10

5

20

15

10

5

V

CE = 2 V

V

CE = 1 V

f = 4 GHz

MAG

2

|S21e

|

2

|S21e

|

0

1

10

Collector Current I (mA)

100

1

10

Collector Current I

100

C

(mA)

C

5

Data Sheet PU10324EJ02V0DS

NE662M03

OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER

OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER

15

10

5

50

40

30

20

10

0

15

10

5

50

40

30

20

10

0

V

CE = 2 V, f = 1 GHz

V

CE = 2 V, f = 2 GHz

I

Cq = 5 mA (RF OFF)

I^Cq= 5 mA (RF OFF)

P

out

P

out

0

–5

0

–5

I

C

I

C

–10

–25

–10

–20

–15

–10

–5

0

–15

–10

–5

0

5

Input Power Pⁱⁿ(dBm)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

3

2

20

16

12

8

5

4

3

2

20

16

12

8

V

CE = 1 V

VCE = 2 V

f = 1 GHz

G

a

G

a

NF

1

0

1

0

4

0

4

0

1

10

Collector Current I

100

1

10

Collector Current I

100

C

(mA)

C

(mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

5

4

3

2

20

16

12

8

5

4

3

2

20

16

12

8

V

CE = 1 V

VCE = 2 V

f = 2 GHz

G

a

G

a

NF

1

0

1

0

4

0

4

0

1

10

Collector Current I

100

1

10

Collector Current I

100

C

(mA)

C

(mA)

Remark The graphs indicate nominal characteristics.

6

Data Sheet PU10324EJ02V0DS

NE662M03

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.csd-nec.com/

7

Data Sheet PU10324EJ02V0DS

NE662M03

PACKAGE DIMENSIONS

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)

1.2 ± 0.05

0.8 ± 0.1

2

3

1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

8

Data Sheet PU10324EJ02V0DS

NE662M03

•

The information in this document is current as of May, 2003. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

9

Data Sheet PU10324EJ02V0DS

NE662M03

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

TEL: +82-2-558-2120

FAX: +82-2-558-5209

http://www.ee.nec.de/

TEL: +49-211-6503-01 FAX: +49-211-6503-487

FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk

NEC Electronics (Europe) GmbH

California Eastern Laboratories, Inc.

http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

0302-1


型号：	NE662M03-FB-A
厂家：	NEC
描述：	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3 放大器 ISM频段光电二极管晶体管
文件：	总10页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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