BD-E50DRD [BRTLED]
super red chips, which are made from AlGaAs on GaAs substrate; 超级红筹股，这是在GaAs衬底制成的铝镓砷
| 型号： | BD-E50DRD |
| 厂家： | 
BRTLED |
| 描述： | super red chips, which are made from AlGaAs on GaAs substrate |
| 文件： | 总3页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E50DRD
●
Package Dimensions :
●
Features :
1. 0.50 inch (12.70mm) Digit Height.
2. Continuous uniform segments.
3. Low power requirement.
7.10(.280)
10
12.70(.500)
19.00(.748)
1.5(.059)
4. Excellent characters appearance.
5. Solid state reliability.
15.24(.600)
1.00(.039)
25.00(.984)
6. Categorized for luminous intensity.
7. Duplex drive common anode.
MARK
●
Description :
xxxxx
8.00(.315)
1. The BD-E50DRD is a 12.7mm(0.50")
high dual digit seven segments display.
2. This product use super red chips, which
are made from AlGaAs on GaAs
substrate.
4.3±0.5(.169±020)
0.50(.020)
2.54(.100)
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3. This product have a black face and
white segments.
4. This product doesn't contain restriction
substance, comply ROHS standard.
● Internal Circuit Diagram :
10
5
D1
D2
D1.
D2.
A
F
B
A
B
C
D
E
F
G
DP
A
B
C
D
E
F
G
DP
G
E
C
D
DP1
DP2
+
7
6
4
1
3
8
9
2
PIN 1.
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E50DRD
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
80
IF
30
150
IFP
(Duty 1/10, 1KHZ)
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
VR
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Forward Voltage Per Segment
Luminous Intensity Per Segment
Reverse Current Per Segment
Peak Wave Length
Symbol Condition Min.
Typ.
1.7
7.8
-
Max.
Unit
V
Vf
Iv
IF=10mA
IF=10mA
VR=5V
-
2.5
-
-
100
-
mcd
µA
IR
-
λp
λd
∆λ
IF=10mA
IF=10mA
IF=10mA
-
638
-
660
-
nm
nm
nm
Dominant Wave Length
648
-
Spectral Line Half-width
20
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E50DRD
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
570
600
630
660
690
720
750
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
3.0
2.0
1.0
0.0
40
30
20
10
0
20 40 60 80 100 120
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 3
相关型号：
©2020 ICPDF网 联系我们和版权申明