BD-E52DRD [BRTLED]
super red chips, which are made from AlGaAs on GaAs substrate; 超级红筹股，这是在GaAs衬底制成的铝镓砷
| 型号： | BD-E52DRD |
| 厂家： | 
BRTLED |
| 描述： | super red chips, which are made from AlGaAs on GaAs substrate |
| 文件： | 总3页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E52DRD
●
Package Dimensions :
●
Features :
1. 0.54 inch (13.80mm) Digit Height.
2. Continuous uniform segments.
3. Low power requirement.
8.16(.321)
5
15.24(.600)
13.80(.543)
21.15(.833)
1.60(.063)
4. Excellent characters appearance.
5. Solid state reliability.
25.20(.992)
6. Categorized for luminous intensity.
7. Duplex drive common anode.
7.80(.307)
0.50(.020)
3.0(.118) MIN.
2.54x8=20.32(.800)
●
Description :
1. The BD-E52DRD is a 13.80mm(0.54")
high dual digit 14-segment
alphanumeric display.
Notes:
2. This product use super red chips,
which are made from AlGaAs on
GaAs substrate.
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3. This product have a black face and
white segments.
4. This product have a black face and
white segments.
● Internal Circuit Diagram :
佰鴻工業股份有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E52DRD
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
80
IF
30
150
IFP
(Duty 1/10, 1KHZ)
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
VR
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Symbol Condition Min.
Typ.
1.7
7.5
-
Max.
2.5
-
Unit
V
Forward Voltage Per Segment
Luminous Intensity Per Segment
Reverse Current Per Segment
Peak Wave Length
Vf
Iv
IF=10mA
IF=10mA
VR=5V
-
-
mcd
µA
IR
-
-
100
-
λp
λd
IF=10mA
IF=10mA
660
-
nm
nm
nm
Dominant Wave Length
638
648
佰鴻工業股份有限公司
∆λ
Spectral Line Half-width
IF=10mA
-
20
-
http://www.brtled.com
Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E52DRD
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
570
600
630
660
690
720
750
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
3.0
佰鴻工業股份有限公司
2.0
40
30
http://www.brtled.com
20
1.0
10
0
0.0
20 40 60 80 100 120
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 3
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