BD-E524RD [BRTLED]

hi-eff red chips, which are made from GaAsP on GaP substrate; HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓
BD-E524RD
型号: BD-E524RD
厂家: BRTLED    BRTLED
描述:

hi-eff red chips, which are made from GaAsP on GaP substrate
HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓

文件: 总3页 (文件大小:222K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E524RD  
Package Dimensions :  
Features :  
8.16(.321)  
5
1. 0.54 inch (13.80mm) Digit Height.  
2. Continuous uniform segments.  
3. Low power requirement.  
15.24(.600)  
13.80(.543)  
21.15(.833)  
1.60(.063)  
4. Excellent characters appearance.  
5. Solid state reliability.  
25.20(.992)  
6. Categorized for luminous intensity.  
7. Duplex drive common anode.  
7.80(.307)  
0.50(.020)  
3.0(.118) MIN.  
2.54x8=20.32(.800)  
Description :  
1. The BD-E524RD is a 13.80mm(0.54")  
high dual digit 14-segments  
alphanumeric display.  
Notes:  
2. This product use hi-eff red chips, which  
are made from GaAsP on GaP substrate.  
3. This product have a black face and  
white segments.  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E524RD  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Symbol Condition Min.  
Typ.  
1.9  
3.5  
-
Max.  
Unit  
V
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
2.5  
-
-
100  
-
mcd  
µA  
IR  
-
λp  
λd  
λ  
IF=10mA  
IF=10mA  
IF=10mA  
-
626  
-
640  
-
nm  
nm  
nm  
Dominant Wave Length  
636  
-
Spectral Line Half-width  
40  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E524RD  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
560  
590  
620  
650  
680  
710  
740  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
3.0  
佰鴻工業股份有限公司  
40  
2.0  
30  
20  
http://www.brtled.com  
1.0  
10  
0
0.0  
0
20 40 60 80 100 120  
0
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.1.0 Page 3 of 3  

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