TISP6151X [BOURNS]
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS; 双正向导电的P- GATE闸流体可编程过电压保护
| 型号： | TISP6151X |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 文件： | 总9页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP61511D
PLIANT
VERSIONS
AVAILABLE
*RoHS COM
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61511D Gated Protectors
Dual Voltage-Programmable Protectors.
– Wide 0 to -80 V Programming Range
– Low 5 mA max. Triggering Current
– High 150 mA min. Holding Current
D Package (Top View)
1
8
7
6
5
K1
G
K1 (Tip)
(Tip)
2
A
A
(Ground)
(Ground)
(Gate)
Rated for International Surge Wave Shapes
3
4
NC
K2
ITSP
Voltage Wave
Shape
Standard
K2 (Ring)
(Ring)
A
170
90
MD6XANB
2/10 µs
1.2/50 µs
0.5/700 µs
10/700 µs
10/1000 µs
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
NC - No internal connection
Terminal typical application names shown in
parenthesis
40
K17, K20, K21
TR-NWT-001089
40
30
Device Symbol
K1
G
K2
Functional Replacements for
Functional
Replacement
With Standard
Functional
Replacement
With Lead Free
Termination Finish Termination Finish
Package
Type
Device Type
Order As
Order As
LCP1511,
LCP1511D,
ATTL7591AS,
MGSS150-1
TISP61511D
or TISP61511DR
for Taped and
Reeled
TISP61511D-S
or TISP61511DR-S
for Taped and
Reeled
8-pin
Small-
Outline
A
SD6XAE
.............................................. UL Recognized Component
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the
voltage, VGG, applied to the G terminal.
Description
The TISP61511D is a dual forward-conducting buffered p-gate over-
voltage protector. It is designed to protect monolithic Subscriber Line
Interface Circuits, SLICs, against overvoltages on the telephone line
caused by lightning, ac power contact and induction. The TISP61511D
limits voltages that exceed the SLIC supply rail voltage.
The SLIC line driver section is typically powered from 0 V (ground)
and a negative voltage in the region of -10 V to -70 V. The protector
gate is connected to this negative supply. This references the
protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage
stress on the SLIC is minimized.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As
the current subsides the high holding current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by
power cross and induction.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating
Symbol
VDRM
Value
-100
-85
Unit
V
Repetitive peak off-state voltage, VGK = 0, -40 °C ≤ TJ ≤ 85 °C
Repetitive peak gate-cathode voltage, VKA = 0, -40 °C ≤ T ≤ 85 °C
VGKRM
V
J
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs
5/310 µs
0.2/310 µs
1/20 µs
30
40
ITSP
A
40
90
2/10 µs
TJ = -40 °C
120
170
TJ = 25 °C, 85 °C
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
full-sine-wave, 20 ms
ITSM
5
3.5
A
1 s
Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2)
Junction temperature
IGSM
TJ
2
A
-55 to +150
-55 to +150
°C
°C
Storage temperature range
T
stg
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions. See the applications section for the details of the impulse generators.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.
Recommended Operating Conditions
Component
Min
Min
Typ
Max
Unit
CG
Gate decoupling capacitor
220
nF
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
J
Parameter
Test Conditions
Typ
Max
5
Unit
µA
µA
V
TJ = 25 °C
TJ = 70 °C
ID
Off-state current
Breakover voltage
VD = -85 V, VGK = 0
50
V(BO)
IT = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3)
-58
IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt(i) = 14 A/µs (see Note 3)
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt(i) = 70 A/µs (see Note 3)
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/dt(i) = 40 A/µs (see Note 3)
10
20
25
Gate-cathode voltage
at breakover
VGK(BO)
V
IT = 0.5 A, tw = 500 µs
IT = 3 A, tw = 500 µs
3
4
VT
VF
On-state voltage
Forward voltage
V
V
IF = 5 A, tw = 500 µs
3
IF = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3)
5
5
Peak forward recovery IT = 30 A, 10/700 µs, 1.5 kV, RS= 10 Ω, di/dt (i) = 14 A/µs (see Note 3)
VFRM
V
voltage
IT = 30 A, 1.2/50 µs, 1.5 kV, RS= 10 Ω, di/dt(i) = 70 A/µs (see Note 3)
IT = 38 A, 2/10 µs, 2.5 kV, RS= 61 Ω, di/dt(i) = 40 A/µs (see Note 3)
7
12
NOTE
3: All tests have CG = 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and
the R or T terminal. See the applications section for the details of the impulse generators.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted) (Continued)
J
Parameter
Test Conditions
IT = 1 A, di/dt = -1A /ms, VGG = -48 V
Min
Typ
Max
Unit
mA
µA
µA
mA
V
IH
Holding current
150
TJ = 25°C
TJ = 70°C
5
50
5
IGAS
Gate reverse current
VGG = -75 V, K and A terminals connected
IGT
Gate trigger current
Gate trigger voltage
IT = 3 A, tp(g) ≥ 20 µs, VGG = -48 V
IT = 3 A, tp(g) ≥ 20 µs, VGG = -48 V
0.2
VGT
2.5
100
50
VD = -3 V
pF
Anode-cathode off-
state capacitance
CAK
f = 1 MHz, Vd = 1 V, IG = 0, (see Note 4)
VD = -48 V
pF
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
Ptot = 0.8 W, TA = 25°C
5 cm2, FR4 PCB
D Package
170
RθJA
Junction to free air thermal resistance
°C/W
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Parameter Measurement Information
+i
Quadrant I
IFSP (= |ITSP|)
Forward
Conduction
Characteristic
IFSM (= |ITSM|)
IF
VF
VGK(BO)
VGG
VD
+v
-v
ID
I(BO)
IH
IS
VT
VS
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PM6XAAA
Figure 1. Voltage-Current Characteristic
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
TI6LAA
VGEN = 250 Vrms
RGEN = 10 to 150 Ω
10
1
0·1
1
10
100
1000
t - Current Duration - s
Figure 2.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
DEVICE PARAMETERS
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage
breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology
did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic.
Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilized.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the
fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote
an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single
device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols
have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability
will be assumed from the use of this guide.
Data Sheet
Symbol
ITSP
Alternative
Symbol
IPP
Parameter
Non-repetitive peak on-state pulse current
Off-state current
Alternative Parameter
Peak pulse current
IR
ID
IGAS
VD
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
Reverse voltage LINE/GND
IRM
Gate reverse current (with A and K terminals connected)
Off-state voltage
IRG
VR
VRM
Peak forward recovery voltage
Breakover voltage
VFRM
V(BO)
VFP
Peak forward voltage LINE/GND
VSGL
Vgate
VGATE
VS
Dynamic switching voltage GND/LINE
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
VG
GATE/GND voltage
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
VDRM
VGKM
VGK
VMLG
VMGL
VGL
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Gate-cathode voltage at breakover
VGK(BO)
VDGL
VLG
Dynamic switching voltage GATE/LINE
Cathode-anode voltage
VK
LINE/GND voltage
VGND/LINE
Coff
Anode-cathode capacitance
Cathode 1 terminal
CAK
K1
K2
A
Off-state capacitance LINE/GND
Tip terminal
Tip
Cathode 2 terminal
Ring
GND
Gate
Rth (j-a)
Ring terminal
Anode terminal
Ground terminal
Gate terminal
G
Gate terminal
Thermal Resistance, junction to ambient
RθJA
Thermal Resistance, junction to ambient
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, TJ. Hence a characteristic
value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial
testers, which generally minimize the temperature rise caused by testing.
Application Circuit
Figure 3 shows a typical TISP61511D SLIC card protection circuit. The incoming line wires, R and T, connect to the relay matrix via the series
overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for overcurrent protection.
Resistors will reduce the prospective current from the surge generator for both the TISP61511D and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or
battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-wire protection voltage is
twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61511D protector. The protector gate reference voltage comes from the
SLIC negative supply (VBAT). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
OVER-
CURRENT
PROTECTION
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
SLIC
PROTECTOR
SLIC
TIP
WIRE
Th1
S3a
Th4
R1a
R1b
S1a
S2a
Th3
Th5
Th2
RING
WIRE
S3b
TISP
3xxxF3
OR
TISP
61511D
S1b
S2b
VBAT
7xxxF3
220 nF
TEST
EQUIP-
MENT
RING
GENERATOR
AI6XAA
Figure 3. Typical Application Circuit
Impulse Conditions
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of Peak Amplitude (voltage or current), rise time and a decay time to 50 % of the
maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 38 A, 5/310 µs wave shape would have a
peak current value of 38 A, a rise time of 5 µs and a decay time of 310 µs.
There are three categories of surge generator type; single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same waveshape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically
produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance the wave shape
produced is intermediate between the open circuit and short circuit values.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Conditions (Continued)
When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of
open circuit voltage, it is the current waveshape that must be used to assess the TISP surge requirement. As an example, the CCITT IX K17
1.5 kV, 10/700 µs surge is changed to a 38 A 5/310 µs waveshape when driving into a short circuit. The impulse generators used for rated
values are tabulated below
Impulse Generators used for Rated Values
Peak Voltage
Setting
V
Voltage
Wave Form
µs
Generator Fictive
External
Peak Current
Current
Wave Form
µs
Standard
Source Impedance
Series Resistance
Y
Y
10
0
A
170
80
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
2500
2/10
5
2/10
3000
1.2/50
38
40
40
10
0.6/18
1600
0.5/700
10/700
10/1000
0
40
40
0.2/310
5/310
K17, K20, K21
TR-NWT-001089
1600
0
1000
23
30
10/1000
Figures 4. and 5. show how the TISP61511D limits negative and positive overvoltages. Negative overvoltages (Figure 4.) are initially clipped
close to the SLIC negative supply rail value (VBAT). If sufficient current is available from the overvoltage, then the protector (Th5) will crowbar
into a low voltage on-state condition. As the overvoltage subsides the high holding current of the crowbar prevents dc latchup. The protection
voltage will be the sum of the gate supply (VBAT) and the peak gate-cathode voltage (VGK(BO)). The protection voltage will be increased if there
is a long connection between the gate decoupling capacitor, C, and the gate terminal. During the initial rise of a fast impulse, the gate current
(IG) is the same as the cathode current (IK). Rates of 70 A/µs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To
minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized.
Inductive voltages in the protector cathode wiring can increase the protection voltage. These voltages can be minimized by routing the SLIC
connection through the protector as shown in Figure 3.
SLIC
PROTECTOR
SLIC
PROTECTOR
SLIC
SLIC
IF
Th5
IK
Th5
TISP
61511D
TISP
61511D
IG
VBAT
VBAT
C
220 nF
220 nF
AI6XAB
AI6XAC
Figure 4. Negative Overvoltage Condition
Figure 5. Positive Overvoltage Condition
Positive overvoltages (Figure 5.) are clipped to ground by forward conduction of the diode section in protector (Th5). Fast rising impulses will
cause short term overshoots in forward voltage (VFRM).
The thyristor protection voltage, (V(BO)) increases under lightning surge conditions due to thyristor regeneration time. This increase is depen-
dent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its breakdown region. The diode protection voltage, known as
the forward recovery voltage, (VFRM ) is dependent on the rate of current rise, di/dt. An estimate of the circuit di/dt can be made from the surge
generator voltage rate of rise, dv/dt, and the circuit resistance. The impulse generators used for characterizing the protection voltages are
tabulated on the next page.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Generators used for Electrical Characteristic Values
Peak Voltage
Setting
V
Voltage
Generator Fictive
External Series Peak Current Di/dt(I) Initial
Current
Standard
Wave Form Source Impedance
Resistance
Rate Of Rise Wave Form
µs
Y
Y
A
A/µs
40
70
14
8
µs
TR-NWT-001089
ETS 300 047-1
K17, K20, K21
TR-NWT-001089
2500
2/10
5
61
12
10
23
38
30
30
30
2/10
1500
1.2/50
10/700
10/1000
38
40
10
0.6/21
5/350
10/1000
1500
1000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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