TISP4115H3BJR-STISP4115H3BJR-S [BOURNS]
Silicon Surge Protector, 115V V(BO) Max, 60A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN;
| 型号： | TISP4115H3BJR-STISP4115H3BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 115V V(BO) Max, 60A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN 光电二极管 |
| 文件： | 总13页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
T
N
A
I
L
P
M
O
C
S
H
o
R
*
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3BJ Overvoltage Protector Series
TISP4xxxH3BJ Overview
®
This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
Summary Electrical Characteristics
V
V
V @ I
T
I
I
I
I
H
C @ -2 V
o
Functionally
Replaces
DRM
V
(BO)
V
T
DRM
µA
(BO)
T
Part #
V
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
mA
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
A
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
mA
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
pF
120
120
120
120
65
TISP4070H3
TISP4080H3
TISP4095H3
TISP4115H3
TISP4125H3
TISP4145H3
TISP4165H3
TISP4180H3
TISP4200H3
TISP4220H3
TISP4240H3
TISP4250H3
TISP4265H3
TISP4290H3
TISP4300H3
TISP4350H3
TISP4395H3
TISP4400H3
58
65
75
90
70
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
P0640SC†
P0720SC†
P0900SC†
P1100SC†
80
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
100
120
135
145
155
160
180
190
200
220
230
275
320
300
65
P1300SC†
P1500SC
P1800SC
P2300SC†
P2600SC†
65
65
65
65
55
55
55
55
55
55
P3100SC
P3500SC
55
55
† Bourns part has an improved protection voltage
Summary Current Ratings
I
I
di/dt
A/µs
TSP
A
TSM
A
Parameter
Waveshape
Value
2/10
500
1.2/50, 8/20
300
10/160
250
5/320
200
10/560
160
10/1000
100
1 cycle 60 Hz 2/10 Wavefront
60 400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
SMBJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
1
2
T(A)
R(B)
V
V
DRM
V
(BO)
V
Device
MDXXBG
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
58
65
75
90
70
80
Device Symbol
95
115
125
145
165
180
200
220
240
250
265
290
300
350
395
400
T
100
120
135
145
155
160
180
190
200
220
230
275
320
300
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Rated for International Surge Wave Shapes
I
TSP
Waveshape
Standard
A
2/10 µs
8/20 µs
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
500
300
250
200
160
100
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
Low Differential Capacitance ...................................67 pF max.
............................................... UL Recognized Component
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
How To Order
Device
Package
Carrier
Embossed Tape Reeled
Bulk Pack
Order As
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB)
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
± 58
Unit
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
± 65
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
Repetitive peak off-state voltage, (see Note 1)
V
V
DRM
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
500
300
250
220
200
200
200
160
100
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
I
A
TSP
55
60
I
A
16.7 ms (60 Hz) full sine wave
TSM
2.1
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
di /dt
400
A/µs
°C
T
T
-40 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with T = 25 °C.
J
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min.
Typ.
Max.
±5
±10
Unit
Repetitive peak off-
state current
T = 25 °C
A
I
V
= V
DRM
µA
DRM
D
T = 85 °C
A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
±78
V
Breakover voltage
dv/dt = ±750 V/ms,
R
= 300
V
Ω
(BO)
SOURCE
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
±0.6
±3
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
Impulse breakover
voltage
V
V
(BO)
Ω
I
Breakover current
On-state voltage
Holding current
dv/dt = ±750 V/ms,
R
= 300
±0.15
A
V
A
(BO)
SOURCE
V
I = ±5 A, t = 100 µs
T
T
W
I
I = ±5 A, di/dt = - /+30 mA/ms
±0.15
±5
±0.6
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
T = 85 °C
±10
D
D
A
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted) (continued)
A
Parameter
Test Conditions
f = 100 kHz, V = 1 V rms, V = 0,
Min.
Typ.
145
80
70
130
71
60
120
65
55
62
Max.
170
90
84
150
79
67
140
74
62
73
Unit
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
d
D
f = 100 kHz, V = 1 V rms, V = -1 V
d
D
f = 100 kHz, V = 1 V rms, V = -2 V
d
D
C
Off-state capacitance
pF
off
f = 100 kHz, V = 1 V rms, V = -50 V
d
D
30
24
28
22
35
28
33
26
f = 100 kHz, V = 1 V rms, V = -100 V
d
D
(see Note 6)
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with V = -98 V.
D
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I = I
Min.
Typ.
Max.
Unit
,
TSM(1000)
T
113
T = 25 °C, (see Note 7)
A
R
Junction to free air thermal resistance
°C/W
θJA
265 mm x 210 mm populated line card,
4-layer PCB, I = I , T = 25 °C
50
T
TSM(1000)
A
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAAB
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED BREAKOVER VOLTAGE
vs
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC4HAF
TCHAG
1.10
100
VD = ±50 V
10
1.05
1
0·1
1.00
0·01
0.95
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED HOLDING CURRENT
vs
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
JUNCTION TEMPERATURE
TC4HAD
TC4HACB
2.0
1.5
200
150
TA = 25 °C
tW = 100 µs
100
70
50
40
30
1.0
0.9
20
15
0.8
0.7
'4125
THRU
'4220
10
7
5
4
3
0.6
0.5
'4070
THRU
'4115
'4240
THRU
'4400
2
1.5
0.4
1
-25
0
25
50
75
100 125 150
0.7
1
1.5
2
3
4
5
7
10
TJ - Junction Temperature - °C
VT - On-State Voltage - V
Figure 4.
Figure 5.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Characteristics
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
NORMALIZED CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
OFF-STATE VOLTAGE
TCHAEB
TC4HABB
75
70
65
60
55
50
45
40
35
30
1
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
0.6
0.5
C =Coff(-2 V) - Coff(-50 V)
'4070 THRU '4115
0.4
0.3
'4125 THRU '4220
'4240 THRU '4400
0.2
0.5
1
2
3
5
10
20 30 50
100150
50 60 70 80 90100
150
200 250 300
VD - Off-state Voltage - V
VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Rating and Thermal Information
THERMAL IMPEDANCE
vs
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
POWER DURATION
CURRENT DURATION
TI4HAC
TI4HAE
30
150
VGEN = 600 Vrms, 50/60 Hz
100
70
RGEN = 1.4*VGEN/ITSM(t)
20
15
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
50
40
30
10
9
20
15
8
7
6
10
7
5
4
5
4
ITSM(t) APPLIED FOR TIME t
3
3
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
2
2
1.5
1.5
0·1
1
0·1
1
10
100
1000
1
10
100
1000
t - Current Duration - s
t - Power Duration - s
Figure 8.
Figure 9.
V
DERATING FACTOR
DRM
IMPULSE RATING
vs
vs
MINIMUM AMBIENT TEMPERATURETI4HADB
AMBIENT TEMPERATURE
TC4HAA
700
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
600
500
BELLCORE 2/10
400
IEC 1.2/50, 8/20
300
250
FCC 10/160
ITU-T 10/700
FCC 10/560
'4070 THRU '4115
200
150
120
'4125 THRU '4220
BELLCORE 10/1000
100
90
'4240 THRU '4440
-40 -35 -30 -25 -20 -15 -10 -5
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
0
5
10 15 20 25
TA - Ambient Temperature - °C
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
Figure 11.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12)
or in multiples to limit the voltage at several points in a circuit (Figure 13).
Th3
Th1
Th1
Th2
Figure 12. Two Point Protection
Figure 13. Multi-point Protection
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V
circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conduc-
. This configuration is normally used to protect
(BO)
tor and ground to the ±V
of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V
(BO)
(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1
is not required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
Voltage
Peak Voltage
Peak Current
Current
Waveform
µs
TISP4xxxH3
25 °C Rating
A
Series
Resistance
Ω
Standard
Setting
V
Value
A
Waveform
µs
2500
1000
1500
800
2/10
500
100
200
100
37.5
25
2/10
500
100
250
160
200
200
200
GR-1089-CORE
0
10/1000
10/160
10/560
9/720 †
9/720 †
0.5/700
10/1000
10/160
10/560
5/320 †
5/320 †
0.2/310
0
0
0
0
0
FCC Part 68
(March 1998)
1500
1000
1500
1500
4000
I3124
37.5
37.5
100
ITU-T K.20/K.21
10/700
5/310
200
0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere.
In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus
time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time limit
imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, V , values of 0, -1 V, -2 V and -50 V. Where possible,
D
values are also given for -100 V. Values for other voltages may be calculated by multiplying the V = 0 capacitance value by the factor given in
D
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about
-2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit.
Figure 10 allows the calculation of the protector V
maximum normal system voltages. The TISP4265H3BJ, with a V
DRM
100 V r.m.s. of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line, and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
value at temperatures below 25 °C. The calculated value should not be less than the
of 200 V, can be used for the protection of ring generators producing
DRM
when the V
has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of
DRM
-22 °C. In this example, the TISP4265H3BJ will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -22 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
3
3
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m (1 ft ) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resis-
tance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and
so can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Typical Circuits
MODEM
TIP
RING
WIRE
FUSE
R1a
RING DETECTOR
HOOK SWITCH
D.C. SINK
Th3
Th2
PROTECTED
EQUIPMENT
Th1
E.G. LINE CARD
TISP4350
SIGNAL
R1b
RING
WIRE
AI6XBK
TIP
AI6XBMA
Figure 14. Modem Inter-wire Protection
R1a
Figure 15. Protection Module
Th3
Th2
SIGNAL
Th1
R1b
AI6XBL
D.C.
Figure 16. ISDN Protection
OVER-
CURRENT
PROTECTION
SLIC
PROTECTION
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
TIP
WIRE
S3a
R1a
Th4
Th5
Th3
S1a
S2a
SLIC
Th1
Th2
R1b
RING
WIRE
S3b
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
S1b
S2b
VBAT
C1
220 nF
TEST
EQUIP-
MENT
RING
GENERATOR
AI6XBJ
Figure 17. Line Card Ring/Test Protection
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Footprint
SMB Pad Size
2.54
(0.10)
METRIC
(INCHES)
2.40
(0.09)
DIMENSIONS ARE:
2.16
(0.09)
MDXXBI
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Symbolization
Device
Code
TISP4070H3BJ
TISP4080H3BJ
TISP4095H3BJ
TISP4115H3BJ
TISP4125H3BJ
TISP4145H3BJ
TISP4165H3BJ
TISP4180H3BJ
TISP4200H3BJ
TISP4220H3BJ
TISP4240H3BJ
TISP4250H3BJ
TISP4265H3BJ
TISP4290H3BJ
TISP4300H3BJ
TISP4350H3BJ
TISP4395H3BJ
TISP4400H3BJ
4070H3
4080H3
4095H3
4115H3
4125H3
4145H3
4165H3
4180H3
4200H3
4220H3
4240H3
4250H3
4265H3
4290H3
4300H3
4350H3
4395H3
4400H3
Carrier Information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in
the most practical carrier. For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk
pack or embossed tape.
Carrier
Embossed Tape Reeled
Bulk Pack
Order As
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
TISP4115H3LM-S
Silicon Surge Protector, 115V V(BO) Max, 2.3A, DO-92, ROHS COMPLIANT, PLASTIC, LM PACKAGE-3
BOURNS
TISP4115J1BJR-S
Silicon Surge Protector, 115V V(BO) Max, 100A, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN
BOURNS
©2020 ICPDF网 联系我们和版权申明