TISP4115J1BJR-S [BOURNS]
Silicon Surge Protector, 115V V(BO) Max, 100A, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN;
| 型号： | TISP4115J1BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 115V V(BO) Max, 100A, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN |
| 文件： | 总14页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4070J1BJ THRU TISP4395J1BJ
T
N
A
I
L
P
S
M
N
E
O
O
L
I
C
B
S
S
A
R
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
H
L
E
I
o
V
A
V
*R
A
TISP4xxxJ1BJ Overvoltage Protector Series
Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
SMB Package (Top View)
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
MT1
MT2
1
2
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
MD4JAA
Device Symbol
VDRM
V(BO)
Device
MT2
MT1
V
V
TISP4070J1
TISP4080J1
TISP4095J1
TISP4115J1
TISP4125J1
TISP4145J1
TISP4165J1
TISP4180J1
TISP4200J1
TISP4219J1
TISP4250J1
TISP4290J1
TISP4350J1
TISP4395J1
58
70
65
80
75
95
90
115
125
145
165
180
200
219
250
290
350
395
100
120
135
145
155
180
190
220
275
320
SD4JAA
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
A
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
1000
800
400
350
250
200
10/160
10/700
10/560
10/1000
TIA/EIA-IS-968 (FCC Part 68)
ITU-T K.20/21/45
TIA/EIA-IS-968 (FCC Part 68)
GR-1089-CORE
............................................ UL Recognized Components
Description
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using
the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection
multi-chip integrations.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
For Standard
For Lead Free
Termination Finish Termination Finish
Device
Package
Carrier
Order As
Order As
TISP4xxxJ1BJ
BJ (SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP4xxxJ1BJR
TISP4xxxJ1BJR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
’4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
Repetitive peak off-state voltage
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1000
800
400
370
350
350
250
200
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
IPPSM
A
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single)
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM
80
A
50 Hz, 1 cycle
60 Hz, 1 cycle
100
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
diT/dt
TJ
800
A/µs
°C
-40 to +150
-65 to +150
Storage temperature range
T
°C
stg
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Recommended Operating Conditions
Component
Min
0
Typ
Max
Unit
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K.20/K.45/K.21 (Basic coordi nation with 400 V GDT)
R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCCPart 68), 9/720 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCCPart 68), 10/560 survival
Series resistor for TIA/EIA-IS-968 (Replaces FCCPart 68), 10/160 survival
6.5
0
Ω
0
0
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
Unit
Repetitive peak off-
state current
TA = 25 °C
TA = 85 °C
±5
IDRM
VD = ±VDRM
µA
±10
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V(BO) AC breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
V
V
V
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
Ramp breakover
V(BO)
voltage
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
4070
’4080
’4095
’4115
’4125
’4145
’4165
’4180
’4200
’4219
’4250
’4290
’4350
‘4395
±96
±101
±112
±130
±140
±161
±183
±199
±221
±242
±276
±320
±386
±434
Impulse breakover
2/10 wave shape, IPP = ±1000 A, RS = 2.5 Ω,
V(BO)
voltage
(see Note 3)
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted) (Continued)
A
Parameter
Test Conditions
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
IT = ±5 A, di/dt = +/-30 mA/ms
Min
Typ
Max
Unit
mA
mA
I(BO) Breakover current
±600
IH
dv/dt
ID
Holding current
±20
±5
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85 VDRM
kV/µs
µA
Off-state current
VD = ±50 V
TA = 85 °C
±10
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
195
120
105
235
145
125
f = 1 MHz, Vd = 1 V rms, VD = 0,
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
180
110
95
215
132
115
f = 1 MHz, Vd = 1 V rms, VD = -1 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
165
100
90
200
120
105
Coff Off-state capacitance
pF
‘4070 thru ‘4115
‘4125 thru ‘4219
‘4250 thru ‘4395
85
50
42
100
60
50
‘4125 thru ‘4219
‘4250 thru ‘4395
40
35
50
40
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 4)
NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000)
TA = 25 °C, (see Note 5)
Min
Typ
Max
Unit
,
RθJA Junction to free air thermal resistance
90
°C/W
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
IPPSM
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
ID
VDRM
VD
-v
+v
ID
VD
VDRM
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
PM4XAF
Figure 1. Voltage-Current Characteristic for Terminals 1-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4JAF
TC4JAG
1.15
1.10
1.05
1.00
0.95
0.90
100
10
VD = ±50 V
1
0·1
0·01
0·001
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ - Junction Temperature- °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
ON-STATE CURRENT
vs
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE VOLTAGE
TC4JAD
TC4JAA
2.0
1.5
400
300
TA = 25 °C
tW = 100 µs
200
150
100
70
50
40
30
1.0
0.9
20
15
0.8
0.7
10
7
0.6
0.5
5
4
3
2
1.5
0.4
1
0.7
-25
0
25
50
75
100 125 150
1
1.5
2
3
4
5
7
10
15
TJ - Junction Temperature- °C
VT - On-State Voltage - V
Figure 4.
Figure 5.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Typical Characteristics
DIFFERENTIAL OFF-STATE CAPACITANCE
NORMALIZED CAPACITANCE
vs
vs
OFF-STATE VOLTAGE
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TC4JABB
TC4JAE
1
90
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
80
70
0.6
0.5
C = C
- Coff(-50 V)
off(-2 V)
0.4
0.3
60
50
40
0.2
0.5
1
2
3
5
10
20 30 50
100150
50 60 70 80 90100
150
200 250 300 350
VD - Off-state Voltage - V
VDRM - Repetitive Peak Off-StateVoltage - V
Figure 6.
Figure 7.
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4JCC
2.5
2.0
1.5
1.0
0.5
0.0
Vd = 10 mVrms, 1 MHz
Vd = 1 V rms, 1 MHz
0.5 0.7
1
2
3
4 5
7
10
20 30 4050
VD — Off-State Voltage — V
Figure 8.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
Rating and Thermal Information
VDRM DERATING FACTOR
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
vs
MINIMUM AMBIENT TEMPERATURE
CURRENT DURATION
TI4JADC
TI4JAA
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
40
30
VGEN = 600Vrms, 50/60 Hz
RGEN = 1.4*VGEN /ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
'4125
THRU
'4219
'4070
THRU
'4115
10
9
8
7
6
5
4
'4250
THRU
'4395
3
2
0·1
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
1
10
100
1000
t - Current Duration - s
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
Figure 10.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
APPLICATIONS INFORMATION
Y Configuration Design
This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of
protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the
V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2 V(BO)1. For a terminal pair
protection voltage of ±400 V, Th1a and Th1b would have V(BO)1 = ±400/2 = ±200 V.
Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair
protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V (BO)2
.
The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM, off-state voltages, see Figure 12. For RING to
TIP this will be 2 VDRM1. The ±200 V V(BO)1 protectors of the previous example have a VDRM of ±155 V, giving a maximum non-clipping signal
voltage of ±310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + V DRM2
.
Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return
protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b.
RING
RING
RING
TIP
2 V
TIP
TIP
2 V
(BO)1
DRM1
ITIP
IRING
Th1a
V(BO)1
V(BO)1 + V(BO)2
Th1b
Th1a
VDRM1
VDRM1 + VDRM2
VDRM2
Th1b
Th1a
Th1b
V(BO)1
VDRM1
I
V(BO)1 + V(BO)2
VDRM1 + VDRM2
Th2
ITIP
+
I
RING
Th2
V(BO)2
Th2
AI4JAA
AI4JAC
AI4JAB
Figure 11. Protection Voltage
Figure 12. Off-State Voltage
Figure 13. Current Flow
GR-1089-CORE Designs
The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable
Th1a and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated
for at least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This
arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations.
RING toGROUND,
RING toTIP Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
TIP to GROUND Voltages
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a, Th1b
Part #
Th2
VDRM
V
V(BO)
V
Part #
±116
±130
±150
±180
±200
±240
±270
±290
±310
±360
±140
±160
±190
±230
±250
±290
±330
±360
±400
±438
±116
±130
±150
±180
±200
±240
±270
±290
±310
±360
±140
±160
±190
±230
±250
±290
±330
±360
±400
±438
TISP4070H3BJ
TISP4080H3BJ
TISP4095H3BJ
TISP4115H3BJ
TISP4125H3BJ
TISP4145H3BJ
TISP4165H3BJ
TISP4180H3BJ
TISP4200H3BJ
TISP4219H3BJ
TISP4070J1BJ
TISP4080J1BJ
TISP4095J1BJ
TISP4115J1BJ
TISP4125J1BJ
TISP4145J1BJ
TISP4165J1BJ
TISP4180J1BJ
TISP4200J1BJ
TISP4219J1BJ
±58
±70
±65
±80
±75
±95
±90
±115
±125
±145
±165
±180
±200
±219
±100
±120
±135
±145
±155
±180
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
GR-1089-CORE Designs (Continued)
RING toGROUND,
RING toTIP Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
TIP to GROUND Voltages
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a, Th1b
Part #
Th2
VDRM
V
V(BO)
V
Part #
±380
±440
±550
±640
±500
±580
±700
±790
±380
±440
±550
±640
±500
±580
±700
±790
TISP4250H3BJ
TISP4290H3BJ
TISP4350H3BJ
TISP4395H3BJ
TISP4250J1BJ
TISP4290J1BJ
TISP4350J1BJ
TISP4395J1BJ
±190
±220
±275
±320
±250
±290
±350
±395
R1b
F1b
F1a
RING
RING
TIP
TIP
R1a
Th1a + Th1b
TISP4xxxT3BJ
Th1a
TISP4xxxH3BJ
Th1b
TISP4xxxH3BJ
Th2
TISP4xxxJ1BJ
Th2
TISP4xxxJ1BJ
AI4JAE
AI4JAD
Figure 14. GR-1089-CORE Design
Figure 15. Coordinated ITU-T K Recommendation Design
ITU-T K.20, K.45 and K.21 Designs
The main impulse voltage wave shape of these recommendations is 10/700. The current wave shape is loading dependent, but it is 5/310 into
a short circuit. To coordinate with a ±400 V primary protector a minimum series resistance of 6.5 Ω is required (“The New ITU-T
Telecommunication Equipment Resistibility Recommendations”, Compliance Engineering Magazine, January-February 2002). The coordination
resistance limits the peak non-truncated current to ±400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the
TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated
for at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of
devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged
TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices.
RING toGROUND,
ITU-T Y Configuration Parts and Part Voltages
RING toTIP Voltages
TIP to GROUND Voltages
R1a = R1b = 6.5
Th2
Ω
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a + Th1b
Part #
VDRM
V
V(BO)
V
Part #
±116
±130
±150
±180
±200
±240
±270
±290
±310
±360
±380
±440
±140
±160
±190
±230
±250
±290
±330
±360
±400
±438
±500
±580
±116
±130
±150
±180
±200
±240
±270
±290
±310
±360
±380
±440
±140
±160
±190
±230
±250
±290
±330
±360
±400
±438
±500
±580
TISP3070T3BJ
TISP3080T3BJ
TISP3095T3BJ
TISP3115T3BJ
TISP3125T3BJ
TISP3145T3BJ
TISP3165T3BJ
TISP3180T3BJ
TISP3200T3BJ
TISP3219T3BJ
TISP3250T3BJ
TISP3290T3BJ
TISP4070J1BJ
TISP4080J1BJ
TISP4095J1BJ
TISP4115J1BJ
TISP4125J1BJ
TISP4145J1BJ
TISP4165J1BJ
TISP4180J1BJ
TISP4200J1BJ
TISP4219J1BJ
TISP4250J1BJ
TISP4290J1BJ
±58
±70
±65
±80
±75
±95
±90
±115
±125
±145
±165
±180
±200
±219
±250
±290
±100
±120
±135
±145
±155
±180
±190
±220
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
ITU-T K.20, K.45 and K.21 Designs (Continued)
RING toGROUND,
RING toTIP Voltages
ITU-T Y Configuration Parts and Part Voltages
TIP to GROUND Voltages
R1a = R1b = 6.5 Ω
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
Th1a + Th1b
Part #
Th2
VDRM
V
V(BO)
V
Part #
±550
±640
±700
±790
±550
±640
±700
±790
TISP3350T3BJ
TISP3395T3BJ
TISP4350J1BJ
TISP4395J1BJ
±275
±320
±350
±395
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to
GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage
limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often
the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ±165 V V(BO) parts for Th1a
and Th1b, the RING to TIP voltage is limited to ±330 V. Using a higher voltage ±350 V V(BO) part for Th2 limits the insulation stress to ±515 V.
Figure 17 and its following table is for a GR-1089-CORE compliant design.
RING to GROUND,
RING to TIP Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
TIP toGROUND Voltages
Th1a, Th1b
VDRM
Th2
VDRM
V
V(BO)
V
VDRM
V
V(BO)
V
V(BO)
V
VDRM
V
V(BO)
V
Part #
Part #
V
±270
±330
±410
±515
TISP4165H3BJ
±135
±165
TISP4350J1BJ
±275
±350
T1
F1b
F1a
TIP
RING
TIP
C1
Voltage
Limit
C1
Th1a
Th1b
TISP4165H3BJ
TISP4165H3BJ
RING
T1 or PW
Insulation
Breakdown
Th2
TISP4350J1BJ
AI4JAH
Figure 16. ADSL Modem Interface Voltage Limitations
Figure 17. Asymmetrical Design for US ADSL Modems
An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ±410 V off-state voltage, this
may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal
waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the
primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary
protector. The ±270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089-
CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary
protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
2.54
(.100)
SMB Land Pattern
2.40
(.095)
2.16
(.085)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBID
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization Code
4070J1
TISP4070J1
TISP4080J1
TISP4095J1
TISP4115J1
TISP4125J1
TISP4145J1
TISP4165J1
TISP4180J1
TISP4200J1
TISP4219J1
TISP4250J1
TISP4290J1
TISP4350J1
TISP4395J1
4080J1
4095J1
4115J1
4125J1
4145J1
4165J1
4180J1
4200J1
4219J1
4250J1
4290J1
4350J1
4395J1
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
Carrier
Standard Quantity
SMB
Embossed Tape Reel Pack
3000
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
SMB (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB02
4.06 - 4.57
(.160 - .180)
3.30 - 3.94
(.130 - .155)
1
2
Index
Mark
(if needed)
2.00 - 2.40
(.079 - .094)
0.10 - 0.20
(.004 - .008)
1.90 - 2.10
(.075 - .083)
1.96 - 2.32
(.077 - .091)
0.76 - 1.52
(.030 - .060)
5.21 - 5.59
(.205 - .220)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBHG
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ1BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB02 Package Single-Sprocket Tape
3.90 - 4.10
(.154 - .161 )
1.50
(.059)
MIN.
ø
1.95 - 2.05
(.077 - .081)
1.55 -
1.65
ø(.061 - .065 )
0.40
(.016)
MAX .
1.65 -
1.85
(.065 - .073 )
5.45 -
(.215 - .219 )
5.55
11.70 -
12.30
(.461 - .484 )
8.20
(.323)
MAX .
e
0 MIN.
.10
7.90 - 8
(.311 - .319 )
Cover
Ta pe
Carrier Tape
Embossment
Direction of Feed
4.50
(.177)
MAX .
Maximium component
rotation
20 °
Ty pical component
cavity center line
Typical component
center line
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBHH
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)
MAX. so that the component cannot rotate more than 20 ° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
330 mm ± 3.0 mm (12.99 in ± .118 in)
Reel hub diameter 75 mm (2.95 in) MIN.
Reel axial hole:
13.0 mm ± 0.5 mm (.512 in ± .020 in)
C. 3000 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
TISP4115M3BJR-STISP4115M3BJR-S
Silicon Surge Protector, 115V V(BO) Max, 32A, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
BOURNS
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