BD652 [BOURNS]
PNP SILICON POWER DARLINGTONS; PNP硅功率DARLINGTONS
| 型号： | BD652 |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | PNP SILICON POWER DARLINGTONS |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
TO-220 PACKAGE
(TOP VIEW)
●
●
●
62.5 W at 25°C CaseTemperature
8 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3V, 3 A
FE
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-80
-100
-120
-140
-60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
VCBO
V
-80
VCEO
V
-100
-120
-5
Emitter-base voltage
VEBO
IC
ICM
IB
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
-8
-12
A
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Ptot
Ptot
62.5
2
W
W
mJ
°C
°C
°C
2
½LIC
50
Operating junction temperature range
Tj
Tstg
TL
-65 to +150
-65 to +150
260
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
V
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-60
-80
Collector-emitter
V(BR)CEO
IC
=
-30 mA
IB = 0
(see Note 5)
V
breakdown voltage
-100
-120
VCE
VCE
VCE
VCE
VCB
VCB
=
-30 V
-40 V
-50 V
-60 V
-60 V
-80 V
IB = 0
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
Collector-emitter
cut-off current
=
=
=
=
=
IB = 0
IB = 0
IB = 0
ICEO
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
VCB = -100 V
VCB = -120 V
Collector cut-off
current
ICBO
mA
mA
VCB
VCB
VCB
VCB
=
=
=
=
-40 V
-50 V
-60 V
-70 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
Emitter cut-off
current
IEBO
hFE
VEB
VCE
=
=
-5 V
-3 V
IC = 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-5
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
IC
=
-3 A
750
IB
IB
=
=
-12 mA
-50 mA
IC
IC
=
=
-3 A
-5 A
-2
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
-2.5
IB
=
-50 mA
-3 V
IC
IC
=
=
-5 A
-3 A
-3
VCE
=
-2.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RθJC
RθJA
2.0
°C/W
°C/W
62.5
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS135AB
TCS135AD
50000
10000
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
-1·5
-1·0
1000
100
TC = -40°C
TC = 25°C
VCE
=
-3 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
-0·5
-0·5
-0·5
-1·0
-10
-1·0
-10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AC
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS135AC
-10
-1·0
-0·1
BD646
BD648
BD650
BD652
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
相关型号：
BD652-S
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
BOURNS
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