ATF-53189-BLKG [AVAGO]
RF SMALL SIGNAL, FET;
| 型号： | ATF-53189-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | RF SMALL SIGNAL, FET |
| 文件： | 总17页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-53189
Enhancement Mode[1] Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Description
Features
• Single voltage operation
• High Linearity and Gain
• Low Noise Figure
Avago Technologies’s ATF-53189 is a single-voltage high
linearity, low noise E-pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
high-linearity, low noise, medium-power amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
• Excellent uniformity in product specifications
• SOT 89 standard package
• Point MTTF > 300 years[2]
• MSL-2 and lead-free
ATF-53189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS application,
and general-purpose discrete E-pHEMT amplifiers that
require medium power and high linearity. All devices are
100% RF and DC tested.
• Tape-and-Reel packaging option available
Specifications
Pin Connections and Package Marking
2 GHz, 4.0V, 135 mA (Typ.)
• 40.0 dBm Output IP3
• 23.0 dBm Output Power at 1dB gain compression
• 0.85 dB Noise Figure
• 15.5 dB Gain
3GX
• 46% PAE at P1dB
• LFOM[3] 12.7 dB
#1
RFin
#2
#3
RFout
#3
RFout
#2
#1
RFin
GND
GND
Applications
Top View
Bottom View
• Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-
fier for Cellular/PCS and WCDMA wireless infrastruc-
ture
Notes:
Package marking provides orientation and identification:
“3G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
• Driver Amplifier for WLAN, WLL/RLL and MMDS ap-
plications
• General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
ATF-53189 Absolute Maximum Ratings[1]
Thermal Resistance[2,4]
ch-b = 70°C/W
Absolute
Maximum
θ
Symbol
Vds
Parameter
Units
V
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
7
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is
25°C. Derate 14.30 mW/°C for TB > 80°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal Mea-
surement method.
Vgs
V
-5 to 1.0
-5 to 1.0
300
Vgd
V
Ids
mA
mA
W
Igs
Gate Current
20
Pdiss
Pin max.
Tch
Total Power Dissipation[3]
1.0
RF Input Power
dBm
°C
+24
Channel Temperature
Storage Temperature
150
Tstg
°C
-65 to 150
ATF-53189 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified.
Symbol
Vgs
Parameters and Test Conditions
Operational Gate Voltage
Threshold Voltage
Units
V
Min.
—
Typ.
0.65
0.30
3.70
650
Max.
—
Vds = 4.0V, Ids = 135 mA
Vds = 4.0V, Ids = 8 mA
Vds = 4.0V, Vgs = 0V
Vth
V
—
—
Ids
Drain to Source Current
Transconductance
µA
—
—
Gm
Vds = 4.0V, Gm = ∆Ids/∆Vgs; mmho
∆Vgs = Vgs1 – Vgs2
—
—
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss
NF
Gate Leakage Current
Noise Figure
Vds = 0V, Vgs = -4V
µA
-10.0
-0.34
—
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
dB
dB
—
—
—
0.80
0.85
1.00
—
1.3
—
G
Gain[1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
dB
dB
—
14.0
—
17.2
15.5
15.0
—
17.0
—
OIP3
P1dB
PAE
Output 3rd Order Intercept Point[1]
Output 1dB Compressed[1]
Power Added Efficiency
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
dBm
dBm
—
36.0
—
42.0
40.0
38.6
—
—
—
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
dBm
dBm
—
—
—
21.7
23.0
23.2
—
—
f=900 MHz
f=2.0 GHz
f=2.4 GHz
%
%
%
—
—
—
33.8
46.0
49.0
—
—
ACLR
Adjacent Channel Leakage
Power Ratio[1,2]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
dBc
—
—
-54.0
-64.0
—
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2
Output Matching Circuit
Γ_mag=0.40
Input Matching Circuit
Γ_mag=0.74
Output
DUT
Input
Γ_ang=120.0°
Γ_ang=-112.4°
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and
ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit
losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]
150
120
90
60
30
0
150
120
90
60
30
0
Stdev=0.08
–3 Std
Stdev=0.86
+3 Std
–3 Std
+3 Std
.5
.6
.7
.8
.9
1
1.1
36 37 38 39 40 41 42 43 44 45
OIP3 (dBm)
NF (dB)
Figure 3. NF @ 2 GHz, 4V, 135 mA.
USL = 1.30 dBm, Nominal = 0.84 dBm.
Figure 2. OIP3 @ 2 GHz, 4V, 135 mA.
LSL = 36 dBm, Nominal = 40 dBm.
150
150
Stdev=1.14
Stdev=0.22
120
90
120
90
–3 Std
+3 Std
–3 Std
+3 Std
60
30
0
60
30
0
19 20 21 22 23 24 25 26
P1dB (dBm)
14.5
15
15.5
16
16.5
Gain (dB)
Figure 5. P1dB @ 2 GHz, 4V, 135 mA.
Nominal = 23 dBm.
Figure 4. Gain @ 2 GHz, 4V, 135 mA.
LSL = 14 dBm, Nominal = 15.5 dBm,
USL = 17 dBm.
Notes:
1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower
limits.
2. Measurements are made on production test board, which represents a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measure-
ments.
3
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent
bias.
Typical Gammas at Optimum OIP3[1]
Freq
(GHz)
Gamma Source
Mag Ang (deg)
Gamma Load
Mag Ang (deg)
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
0.9
2.0
3.9
0.8179
0.7411
0.6875
0.5204
-143.28
-112.36
-94.23
-75.91
0.0721
0.4080
0.4478
0.3525
124.08
119.91
174.74
-120.13
42.0
41.6
41.3
36.9
17.2
15.6
11.2
5.6
21.7
23.4
23.1
22.4
33.8
44.2
41.4
25.7
5.8
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
400
0.9V
350
300
0.8V
250
0.7V
200
150
0.6V
0.5V
100
50
0
0
1
2
3
4
5
6
7
Vds (V)
Figure 6. Typical IV Curve.
4
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
45
45
40
40
35
30
35
30
3V
4V
5V
3V
4V
5V
25
20
25
20
75
90
105
120
Ids (mA)
135
150
165
180
75
90
105
120
135
150
165
180
Ids (mA)
Figure 7. OIP3 vs. Ids and Vds at 900 MHz
Figure 8. OIP3 vs. Ids and Vds at 2 GHz
19
18
17
16
15
14
45
40
35
30
3V
4V
5V
3V
4V
5V
25
20
13
12
75
90
105
120
Ids (mA)
135
150
165
180
75
90
105
120
Ids (mA)
135
150
165
180
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz
Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz
19
18
17
16
15
14
12
10
8
6
4
2
0
14
13
3V
4V
5V
3V
4V
5V
12
75
90
105
120
Ids (mA)
Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz
135
150
165
180
75
90
105
120
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz
135
150
165
180
Note:
Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
5
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
40
8
6
4
35
30
3V
4V
5V
3V
4V
5V
25
20
2
0
75
90
105
120
135
150
165
180
75
90
105
120
135
150
165
180
Ids (mA)
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz
Figure 14. Small Signal Gain vs. Ids and Vds at 5.8 GHz
30
60
60
30
Gain_3V
Pout_3V
PAE_3V
Gain_4V
Pout_4V
PAE_4V
25
20
50
40
50
40
25
20
15
10
30
20
30
20
15
10
5
0
10
0
10
0
5
0
-14
-10
-6
-2
2
6
10
-14
-10
-6
-2
2
6
10
Pin (dBm)
Pin (dBm)
Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=900 MHz
Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=900MHz
30
30
60
60
Gain_4V
25
Gain_5V
Pout_5V
PAE_5V
25
20
50
40
50
40
Pout_4V
PAE_4V
20
15
10
15
10
30
20
30
20
5
0
5
0
10
0
10
0
-10
-6
-2
2
6
10
14
-14
-10
-6
-2
2
6
10
Pin (dBm)
Pin (dBm)
Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 2 GHz
Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=900MHz
Note:
Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
6
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
30
60
30
60
Gain_5V
Pout_5V
PAE_5V
Gain_3V
Pout_3V
PAE_3V
25
20
50
40
25
20
50
40
15
10
30
20
15
10
30
20
5
0
10
0
5
0
10
0
-10
-6
-2
2
6
10
14
-10
-6
-2
2
6
10
14
Pin (dBm)
Pin (dBm)
Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 2 GHz
Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 2 GHz
60
50
60
30
30
Gain_3V
Pout_3V
PAE_3V
Gain_4V
Pout_4V
PAE_4V
50
40
25
20
25
20
40
30
20
30
20
15
10
15
10
10
0
10
0
5
0
5
0
-10
-6
-2
2
6
10
14
18
-10
-6
-2
2
6
10
14
18
Pin (dBm)
Pin (dBm)
Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=3.9 GHz
Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=3.9 GHz
60
50
60
30
30
Gain_5V
Pout_5V
PAE_5V
Gain_3V
Pout_3V
PAE_3V
50
40
25
20
25
20
40
30
20
30
20
15
10
15
10
10
0
10
0
5
0
5
0
-10
-6
-2
2
6
10
14
18
-6
-2
2
6
10
14
18
22
Pin (dBm)
Pin (dBm)
Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=5.8 GHz
Figure 23. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=3.9 GHz
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
7
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
30
60
60
30
Gain_4V
Pout_4V
PAE_4V
Gain_5V
Pout_5V
PAE_5V
25
20
50
40
50
40
25
20
15
10
30
20
30
20
15
10
5
0
10
0
10
0
5
0
-6
-2
2
6
10
14
18
22
-6
-2
2
6
10
14
18
22
Pin (dBm)
Pin (dBm)
Figure 25. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=5.8 GHz
Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=5.8 GHz
ATF-53189 Typical Performance Curves, continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency
46
18
16
14
44
42
12
10
10
8
40
38
-40C
25C
80C
-40C
25C
80C
36
34
6
4
0.5
1.5
2.5
3.5
4.5
5.5
6.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3
Figure 28. Gain vs. Temperature and Frequency at optimum OIP3
25
24
23
50
45
40
35
22
30
-40C
25C
80C
-40C
25C
80C
21
20
25
20
0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
1.5
2.5
3.5
4.5
5.5
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 29. PAE vs. Temperature and Frequency at optimum OIP3
Figure 30. P1dB vs. Temperature and Frequency at optimum OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
8
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwie), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA
30
60
60
30
Gain_4V
Pout_4V
PAE_4V
Gain_5V
Pout_5V
PAE_5V
25
20
50
40
50
40
25
20
15
10
30
20
30
20
15
10
5
0
10
0
10
0
5
0
-14
-10
-6
-2
2
6
10
-14
-10
-6
-2
2
6
10
Pin (dBm)
Pin (dBm)
30
30
60
60
Gain_4V
Pout_4V
PAE_4V
Gain_5V
Pout_5V
PAE_5V
25
20
25
20
50
40
50
40
15
10
15
10
30
20
30
20
5
0
5
0
10
0
10
0
-10
-6
-2
2
6
10
14
-10
-6
-2
2
6
10
14
Pin (dBm)
Pin (dBm)
60
30
60
30
Gain_3V
Pout_3V
PAE_3V
Gain_3V
Pout_3V
PAE_3V
50
40
25
20
50
40
25
20
30
20
15
10
30
20
15
10
10
0
5
0
10
0
5
0
-10
-6
-2
2
6
10
14
18
-10
-6
-2
2
6
10
14
Pin (dBm)
Pin (dBm)
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
9
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 180 mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
0.012
0.02
S22
Ang.
MSG/MAG
dB
Mag.
dB
Ang.
dB
Ang.
65.5
50.5
39.4
31.7
23.3
20.5
18.6
17.5
16.5
15.7
13.4
11
Mag.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
0.776
0.798
0.818
0.832
0.835
0.84
-48.1
-84.7
-110.2
-128.2
-151.9
-160.3
-166.9
-172.2
-176.9
178.8
161.9
147.6
133.8
119.8
110
100.1
80.4
60.7
44
31.8
23.2
13.6
2.6
-4.3
32.2
30.7
29.0
27.3
24.8
23.4
22.2
21.1
20.2
19.3
16.0
13.7
11.9
10.6
9.6
40.839
34.138
28.059
23.278
17.424
14.811
12.876
11.394
10.225
9.256
6.316
4.818
3.928
3.369
3.036
2.702
2.034
1.367
1.027
0.786
0.586
0.459
0.368
0.305
0.244
0.193
0.168
0.155
0.159
0.164
154.1
135.6
121.7
111.2
100.1
94.8
90.2
86.3
82.7
79.3
64.7
51.4
38.4
25.2
14.5
3.7
-17.9
-39.4
-59.4
-77.8
-94.2
-110
-126.9
-141.2
-161.1
-171.7
179.4
169.6
155.5
137.8
-38.4
-34.0
-32.0
-31.4
-31.7
-31.7
-31.4
-31.4
-31.1
-31.1
-30.2
-29.4
-28.6
-28.0
-27.5
-27.3
-26.9
-26.4
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-35.4
-35.4
-35.9
-34.0
-31.4
-28.4
0.428
0.411
0.396
0.384
0.397
0.401
0.403
0.402
0.4
0.398
0.389
0.377
0.367
0.365
0.385
0.405
0.446
0.486
0.544
0.607
0.669
0.721
0.756
0.784
0.794
0.812
0.847
0.852
0.865
0.847
-39.3
-71.3
-94.8
-111.6
-146.6
-153.7
-159
-163.3
-166.8
-169.8
178.4
169.3
160.5
152.5
143.8
135.2
117.8
100.5
87.1
72.6
57.9
45.5
35.1
24.8
15.1
7.6
1.3
35.3
32.3
30.5
29.4
28.3
27.6
26.8
26.3
25.6
25.2
23.1
21.5
18.9
17.0
16.3
15.5
13.5
10.8
10.5
10.0
6.7
6.1
4.8
2.3
3.7
0.8
-0.3
0.3
1.5
-2.0
0.025
0.027
0.026
0.026
0.027
0.027
0.028
0.028
0.031
0.034
0.037
0.04
0.042
0.043
0.045
0.048
0.044
0.041
0.035
0.029
0.02
0.842
0.843
0.844
0.847
0.847
0.847
0.843
0.841
0.851
0.862
0.882
0.903
0.939
0.956
0.94
7.6
2.5
-2.4
-7.3
8.6
6.2
2.7
0.2
-17.2
-27
-37.6
-48.7
-61.5
-79
-117
-172.6
104.4
73.2
82.9
81.5
87
-2.1
-4.6
-6.8
-8.7
-10.3
-12.3
-14.3
-15.5
-16.2
-16.0
-15.7
10.0 0.948
11.0 0.942
12.0 0.92
13.0 0.959
14.0 0.952
15.0 0.943
16.0 0.956
17.0 0.959
18.0 0.918
0.012
0.017
0.017
0.016
0.02
-15.4
-20.1
-21
-24.2
-31.9
-43.5
-2.9
-7.8
-14.7
0.027
0.038
78.1
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
40
30
Mag
Ang
MSG
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.65
0.76
0.79
0.86
0.94
1.00
1.10
1.17
1.41
1.53
1.56
1.72
1.87
2.03
2.18
0.394
0.417
0.423
0.465
0.509
0.545
0.600
0.645
0.777
0.840
0.855
0.920
0.970
0.993
0.997
163.6
172.4
175.3
-165.4
-147.7
-134.6
-116.7
-103.3
-70.0
-56.1
-52.9
-39.0
-27.5
-19.1
-7.5
0.11
0.09
0.08
0.08
0.06
0.08
0.16
0.28
0.35
0.41
0.42
0.51
0.97
1.88
2.54
25.82
21.83
21.71
18.70
17.63
16.45
14.90
13.53
11.35
10.31
10.38
9.79
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 36. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/180 mA.
7.91
6.11
4.56
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
10
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
42.775
35.086
28.4
S12
Mag.
S22
Ang.
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
66.7
49.5
37.8
29.9
21.3
18.6
16.9
15.6
14.6
13.9
11.3
9
5.7
0.8
-4
-8.7
-18.1
-27.6
-38.6
-49.6
-62.1
-80
-118.6
-173.3
105
Mag.
0.458
0.43
0.407
0.39
0.399
0.401
0.402
0.4
0.398
0.396
0.386
0.374
0.364
0.362
0.382
0.401
0.441
0.48
0.542
0.605
0.668
0.721
0.757
0.784
0.794
0.812
0.847
0.853
0.866
0.848
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
0.916
0.897
0.885
0.878
0.859
0.857
0.855
0.854
0.852
0.854
0.851
0.85
0.846
0.844
0.854
0.863
0.883
0.902
0.939
0.956
0.94
-47.6
-83.9
-109.5
-127.5
-151.3
-159.9
-166.5
-171.9
-176.6
179.1
162.1
147.7
133.9
119.8
110
100.2
80.5
60.8
44.1
31.8
23.2
13.6
2.6
-4.2
32.6
30.9
29.1
27.4
24.8
23.3
22.1
21.0
20.1
19.2
15.8
13.5
11.7
10.4
9.4
152.6
133.4
119.5
109.2
98.2
93.1
88.7
84.9
81.5
78.2
63.9
50.7
37.7
24.6
13.9
3.1
-18.5
-40
-37.7
-33.2
-31.4
-30.8
-31.4
-31.1
-31.1
-30.8
-30.8
-30.8
-29.9
-29.4
-28.4
-28.0
-27.7
-27.5
-26.9
-26.6
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.013
0.022
0.027
0.029
0.027
0.028
0.028
0.029
0.029
0.029
0.032
0.034
0.038
0.04
0.041
0.042
0.045
0.047
0.044
0.041
0.035
0.029
0.02
-40.7
-73.3
-96.8
-113.4
-148.1
-155
-160.1
-164.3
-167.7
-170.6
178
35.2
32.0
30.2
29.1
28.1
27.2
26.6
25.9
25.4
25.0
22.9
21.4
19.3
17.0
16.2
15.3
13.3
10.3
10.3
9.8
6.6
5.9
4.6
2.1
3.5
0.4
-0.6
0.0
1.2
23.322
17.286
14.647
12.703
11.225
10.065
9.101
6.197
4.726
3.851
3.301
2.968
2.636
1.972
1.308
1.005
0.769
0.573
0.448
0.36
169
160.4
152.4
143.7
135
117.6
100.2
87.3
72.8
58.1
45.6
35.2
24.8
15.1
7.7
1.4
-2.9
-7.8
-14.7
8.4
5.9
2.3
0.0
-60
-78.3
-95
-2.3
-4.8
-7.0
-8.9
-10.5
-12.4
-14.5
-15.7
-16.5
-16.2
-15.9
10.0 0.948
11.0 0.942
12.0 0.92
13.0 0.959
14.0 0.951
15.0 0.942
16.0 0.956
17.0 0.958
18.0 0.92
-110.5
-127.7
-141.8
-161.9
-172.9
178.7
167.8
154.1
136.9
0.297
0.239
0.188
0.164
0.149
0.155
0.161
0.012
0.018
0.017
0.017
0.02
-15.4
-20
-21.1
-24.2
-31.8
-43.5
74
84.5
82.4
87.3
78.5
0.027
0.038
-2.1
40
30
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
MSG
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.30
0.41
0.44
0.53
0.62
0.69
0.80
0.89
1.16
1.31
1.34
1.52
1.71
1.89
2.07
0.162
0.291
0.302
0.369
0.433
0.484
0.556
0.613
0.764
0.832
0.848
0.914
0.963
0.991
0.998
150.8
161.3
164.2
-174.2
-154.6
-140.2
-120.6
-106.1
-71.0
-56.6
-53.4
-39.3
-27.9
-18.2
-9.2
0.05
0.05
0.05
0.04
0.04
0.05
0.10
0.19
0.26
0.30
0.30
0.39
0.77
0.96
1.58
26.27
22.12
22.02
18.95
17.05
15.87
14.63
13.21
11.19
10.26
10.04
9.64
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 37. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/135 mA.
8.68
6.57
4.51
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 75 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Ang.
-96
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
51.6
34.6
26.7
22.2
19.7
19
18.6
18.5
18.4
18.3
17.8
15.6
11.2
4.9
Mag.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
0.926
0.891
0.882
0.879
0.885
0.886
0.886
0.886
0.885
0.887
0.884
0.884
0.88
0.875
0.882
0.889
0.903
0.917
0.947
0.959
0.941
-80.9
-121.5
-142.5
-155.4
-169.7
-175.4
-180
176.1
172.5
169.3
155.1
142.1
129.1
115.5
106.2
96.8
78.1
59.4
43.5
31.7
23.4
14.1
3.1
-3.7
33.5
29.9
27.0
24.8
21.7
20.1
18.8
17.7
16.8
15.9
12.5
10.1
8.4
7.0
6.1
5.1
2.5
-1.1
-3.6
-6.0
-8.6
-10.7
-12.5
-14.2
-16.2
-18.3
-19.0
-19.7
-18.6
-17.8
47.17
31.192
22.457
17.36
12.12
10.145
8.743
7.695
6.883
6.209
4.212
3.21
2.618
2.246
2.018
1.791
1.337
0.882
0.658
0.501
0.37
0.292
0.236
0.194
0.154
0.121
0.112
0.104
0.118
0.129
135.8
114.3
102.7
94.8
88.9
85
81.6
78.4
75.3
72.4
58.8
45.7
32.5
18.9
8.1
-2.8
-24.5
-46.2
-65.5
-83.3
-98.9
-114.3
-131.4
-146
-166.9
-175.3
176.1
167.9
154.7
138.1
-35.9
-33.2
-32.0
-31.7
-32.8
-32.4
-32.4
-32.0
-31.7
-31.7
-30.5
-29.1
-28.0
-27.1
-26.7
-26.6
-26.0
-25.5
-26.2
-26.7
-28.4
-29.6
-33.2
-37.7
-37.7
-39.2
-40.9
-43.1
-37.7
-33.6
0.016
0.022
0.025
0.026
0.023
0.024
0.024
0.025
0.026
0.026
0.03
0.035
0.04
0.044
0.046
0.047
0.05
0.053
0.049
0.046
0.038
0.033
0.022
0.013
0.013
0.011
0.009
0.007
0.013
0.021
0.389
0.447
0.471
0.482
0.551
0.555
0.557
0.557
0.555
0.554
0.548
0.538
0.532
0.532
0.549
0.567
0.603
0.638
0.681
0.725
0.77
0.805
0.826
0.843
0.843
0.85
0.877
0.878
0.887
0.862
34.7
31.5
29.5
28.2
27.2
26.3
25.6
24.9
24.2
23.8
21.5
19.2
16.2
14.4
13.8
13.0
11.1
8.2
-131.4
-147.6
-157
-172.5
-176
-178.8
178.7
176.5
174.4
165.1
156.3
147.4
139
-1.1
-7.1
-19
-31
130.5
122
105.1
88.1
75.1
61.6
48.2
36.9
27.2
17.2
8
1.2
-4.2
-8.2
-13.1
-21.1
-42.2
-53.9
-65.8
-82.9
-116.4
-159.1
104.3
56.9
79.5
74.4
117.9
111.8
7.9
7.2
4.0
3.3
10.0 0.946
11.0 0.936
12.0 0.914
13.0 0.951
14.0 0.948
15.0 0.937
16.0 0.949
17.0 0.947
18.0 0.906
1.7
-0.7
-0.3
-2.9
-3.5
-3.2
-1.6
-4.1
-14.9
-19.8
-21.1
-24.5
-32.9
-45.1
40
30
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
MSG
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.32
0.41
0.43
0.49
0.56
0.61
0.69
0.75
0.95
1.05
1.08
1.21
1.34
1.47
1.60
0.175
0.224
0.235
0.306
0.375
0.428
0.507
0.569
0.738
0.814
0.831
0.907
0.961
0.992
0.996
127.6
143.8
148.3
173.6
-163.6
-147.2
-125.3
-109.3
-72.0
-57.4
-54.2
-40.5
-29.3
-19.3
-8.9
0.05
0.04
0.03
0.03
0.03
0.04
0.08
0.14
0.20
0.24
0.24
0.30
0.60
0.71
1.01
26.45
21.98
21.50
18.55
16.33
15.18
13.86
12.68
10.81
10.64
9.97
20
MAG
10
0
S21
-10
-20
-30
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
9.25
7.78
6.96
4.46
Figure 38. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/75 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
12
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 5.0V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Ang.
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
66.6
49.3
37.6
29.8
21.2
18.5
16.7
15.4
14.3
13.6
11
Mag.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
0.903
0.889
0.879
0.874
0.857
0.856
0.854
0.853
0.852
0.854
0.852
0.851
0.846
0.844
0.854
0.864
0.883
0.903
0.939
0.957
0.941
-47.8
-84.2
-109.8
-127.8
-151.5
-160
-166.6
-172
-176.7
179.1
162
147.6
133.8
119.8
110
100.1
80.3
60.6
44
31.7
23
13.6
2.5
-4.4
32.5
30.8
28.9
27.2
24.6
23.2
22.0
20.9
19.9
19.1
15.7
13.4
11.6
10.3
9.3
42.048
34.523
27.96
22.97
17.06
14.454
12.541
11.079
9.935
8.984
6.117
4.662
3.798
3.257
2.934
2.611
1.965
1.319
0.989
0.756
0.562
0.441
0.353
0.29
152.7
133.5
119.5
109.2
98.2
93.1
88.7
84.9
81.4
78.1
63.7
50.4
37.4
24.2
13.4
2.5
-19.1
-40.8
-60.9
-79.4
-96.1
-112
-129.2
-143.9
-163.8
-174.6
175.9
166
-37.7
-33.2
-31.4
-30.8
-31.4
-31.1
-31.1
-30.8
-30.8
-30.5
-29.9
-29.4
-28.6
-28.0
-27.7
-27.5
-26.9
-26.6
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.013
0.022
0.027
0.029
0.027
0.028
0.028
0.029
0.029
0.03
0.032
0.034
0.037
0.04
0.041
0.042
0.045
0.047
0.044
0.041
0.035
0.029
0.02
0.466
0.432
0.404
0.385
0.388
0.389
0.39
0.388
0.386
0.383
0.373
0.361
0.352
0.35
0.371
0.392
0.433
0.475
0.536
0.601
0.666
0.72
0.757
0.785
0.796
0.814
0.849
0.855
0.868
0.851
-39.6
-71.6
-94.7
-111.3
-146.6
-153.7
-158.9
-163.2
-166.6
-169.5
179.1
170.2
161.7
153.9
145.2
136.6
119.2
101.9
88.4
73.8
58.9
46.2
35.7
25.2
15.4
7.9
1.6
35.1
32.0
30.2
29.0
28.0
27.1
26.5
25.8
25.3
24.8
22.8
21.4
18.8
16.8
16.1
15.3
13.3
10.5
10.2
9.8
6.5
5.8
4.4
1.9
3.1
0.2
-0.8
-0.2
0.7
8.7
5.3
0.6
-4.1
8.3
5.9
2.4
-8.8
-18.3
-27.7
-37.9
-49
-61.5
-79.3
-117.6
-172.8
105.3
74.4
84
-0.1
-2.4
-5.0
-7.1
-9.0
-10.8
-12.7
-14.8
-15.9
-16.7
-16.5
-16.1
10.0 0.948
11.0 0.941
12.0 0.919
13.0 0.958
14.0 0.951
15.0 0.942
16.0 0.956
17.0 0.957
18.0 0.917
0.012
0.018
0.017
0.017
0.02
-15.5
-20.1
-21.1
-24.2
-31.9
-43.6
0.231
0.183
0.16
0.147
0.149
0.156
81.8
87
77.6
-2.7
-7.7
-14.6
152.8
134.6
0.027
0.038
-2.5
40
30
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
MSG
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.36
0.46
0.49
0.59
0.69
0.77
0.88
0.98
1.28
1.44
1.48
1.68
1.88
2.08
2.28
0.266
0.315
0.327
0.388
0.448
0.495
0.563
0.617
0.764
0.830
0.845
0.912
0.960
0.988
0.994
149.9
162.4
165.6
-172.7
-153.0
-138.6
-116.3
-104.9
-70.5
-56.5
-53.4
-39.7
-28.3
-18.3
-8.5
0.05
0.04
0.04
0.04
0.04
0.06
0.12
0.21
0.31
0.37
0.38
0.42
0.84
1.24
1.78
26.51
22.79
22.09
18.92
17.04
15.87
14.50
13.11
11.19
10.10
10.08
9.39
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 39. MSG/MAG & |S21|2 vs. and
Frequency at 5.0V/135 mA.
8.78
8.05
4.74
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
13
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
0.013
0.022
0.027
0.03
0.028
0.028
0.029
0.029
0.03
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
66.6
49.4
37.7
29.8
21.4
18.7
17
15.7
14.8
14
11.4
8.9
5
-0.1
-5.1
-10.2
-20.2
-30.3
-40.8
-51.6
-64
Mag.
Ang.
-44
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
0.925
0.904
0.889
0.882
0.861
0.859
0.856
0.855
0.853
0.855
0.851
0.851
0.845
0.843
0.853
0.862
0.882
0.901
0.938
0.955
0.938
-47.5
-83.8
-109.3
-127.4
-151.3
-159.8
-166.5
-171.8
-176.7
179.1
162.1
147.6
133.8
119.8
110
100.1
80.4
60.7
44.1
31.8
23.1
13.6
2.6
-4.2
32.6
30.9
29.1
27.4
24.7
23.3
22.0
21.0
20.0
19.1
15.8
13.5
11.7
10.4
9.5
42.873
35.157
28.44
23.35
17.223
14.586
12.655
11.183
10.027
9.067
6.179
4.713
3.846
3.299
2.972
2.645
1.99
1.336
1.006
0.771
0.576
0.453
0.364
0.302
0.241
0.191
0.167
0.154
0.159
0.165
152.7
133.4
119.5
109.2
98.3
93.2
88.9
85.2
81.7
78.4
64.3
51.2
38.4
25.4
14.8
4.1
-37.7
-33.2
-31.4
-30.5
-31.1
-31.1
-30.8
-30.8
-30.5
-30.5
-29.6
-29.1
-28.2
-27.5
-27.3
-27.1
-26.7
-26.4
-27.1
-27.7
-29.4
-30.8
-34.0
-37.7
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.435
0.425
0.416
0.41
35.2
32.0
30.2
28.9
27.9
27.2
26.4
25.9
25.2
24.8
22.7
21.3
19.6
17.0
16.3
15.4
13.4
10.5
10.3
9.7
6.5
5.8
4.6
2.3
3.6
0.7
-0.3
0.1
1.5
-78.6
-102.6
-119.1
-151.6
-158.2
-163
-167.1
-170.4
-173.3
175.3
166
157.1
148.8
140.2
131.6
114.3
97.1
84
70
55.7
43.6
33.5
23.3
13.8
6.6
0.433
0.437
0.439
0.438
0.436
0.435
0.425
0.413
0.403
0.401
0.419
0.438
0.475
0.512
0.565
0.622
0.681
0.729
0.76
0.03
0.033
0.035
0.039
0.042
0.043
0.044
0.046
0.048
0.044
0.041
0.034
0.029
0.02
8.4
6.0
2.5
0.1
-17.1
-38.4
-58
-2.3
-4.8
-6.9
-8.8
-10.4
-12.4
-14.4
-15.5
-16.2
-16.0
-15.7
-76
-92.2
-107.4
-124.6
-138.3
-157.7
-167.9
-177
173.2
159.5
141.4
10.0 0.946
11.0 0.94
12.0 0.92
13.0 0.958
14.0 0.952
15.0 0.943
16.0 0.955
17.0 0.958
18.0 0.918
-82
-121.6
-176.6
105.2
74.2
85.1
83.1
89
0.013
0.018
0.017
0.017
0.02
0.785
0.794
0.81
0.844
0.849
0.861
0.843
-15.5
-20.1
-21.2
-24.2
-31.9
-43.5
0.5
-3.7
-8.5
-15.5
0.027
0.038
79.5
-2.0
40
30
Freq
GHz
Fmin
dB
Gamma Opt
Rn/50
Ga
dB
MSG
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.34
0.43
0.45
0.53
0.61
0.68
0.78
0.86
1.10
1.24
1.27
1.43
1.60
1.76
1.93
0.225
0.282
0.296
0.362
0.427
0.478
0.551
0.608
0.763
0.832
0.848
0.915
0.964
0.991
0.995
146.2
157.0
160.2
-177.0
-156.3
-141.3
-121.1
-106.2
-70.8
-56.6
-53.5
-39.7
-28.4
-18.5
-8.6
0.05
0.04
0.04
0.03
0.03
0.05
0.09
0.17
0.24
0.28
0.30
0.38
0.74
0.95
1.55
26.30
22.19
22.07
19.00
17.13
15.89
14.59
13.17
11.22
10.16
9.93
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10 12 14 16 18
FREQUENCY (GHz)
Figure 40. MSG/MAG & |S21|2 vs. and
Frequency at 3.0V/135 mA.
9.57
8.78
7.27
3.39
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
14
Device Models, PCB Layout and Stencil Device
Refer to Avago’s Web Site: http://www.avagotech.com/pages/en/rf_microwave
Part Number Ordering Information
Part Number
No of devices Container
ATF-53189-BLKG
ATF-53189-TR1G
100
7” Tape/Reel
13” Tape/Reel
3000
SOT89 Package Dimensions
D
D
POLISH
D1
D1
E1
L
E1
OR
E
E
L
e
e
C
S
e1
S
e1
1.625
D2
D1
MATTE FINISH
HALF ETCHING
DEPTH 0.100
A
OR
E
b
b1
b
POLISH
b1
Dimensions in mm
Dimensions in inches
Symbols
Minimum
1.40
0.89
0.36
0.41
0.38
4.40
1.40
1.45
3.94
2.40
2.90
0.65
1.40
Nominal
1.50
1.04
0.42
0.47
0.40
4.50
1.60
1.65
-
Maximum
1.60
1.20
0.48
0.53
0.43
4.60
1.75
1.80
4.25
2.60
3.10
0.85
1.60
Minimum
0.055
0.0350
0.014
0.016
0.014
0.173
0.055
0.055
0.155
0.094
0.114
0.026
0.054
Nominal
0.059
0.041
0.016
0.018
0.015
0.177
0.062
0.062
-
Maximum
0.063
0.047
0.018
0.030
0.017
0.181
0.069
0.069
0.167
0.102
0.122
0.034
0.063
A
L
b
b1
C
D
D1
D2
E
E1
e1
S
2.50
3.00
0.75
1.50
0.098
0.118
0.030
0.059
e
15
Device Orientation
REEL
CARRIER
TAPE
USER FEED
DIRECTION
COVER TAPE
Tape Dimensions
Ø 1.5 +0.1/-0.0
8.00
Ø 1.50 MIN.
2.00 .05 SEE NOTE 3
4.00 SEE NOTE 1
1.75 .10
0.30 .05
R 0.3 MAX.
A
A
5.50 .05
SEE NOTE 3
Bo
12.0 .3
Ko
R 0.3 TYP.
Ao
SECTION A - A
Ao = 4.60
Bo = 4.90
Ko = 1.90
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE 0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
16
Reel Dimensions – 13” Reel
R
R
LOKREEL
MINNEAPOLIS USA
U.S PAT 4726534
102.0
REF
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
1.5
88 REF
330.0
REF
"A"
96.5
6
PS
Detail "B"
+0.3
- 0.2
(MEASURED AT HUB)
(MEASURED AT HUB)
8.4
6
PS
11.1 MAX.
Detail "A"
Ø 20.2
Dimensions in mm
Ø 13.0 +0.5
-0.2
2.0 0.5
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes 5989-3893EN
AV02-0051EN - November 11, 2013
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