ATF-54143 [AVAGO]
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package; 低噪声增强模式伪HEMT的表面贴装塑料封装
| 型号： | ATF-54143 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| 文件： | 总16页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-54143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Features
High linearity performance
Enhancement Mode Technology
Low noise figure
Excellent uniformity in product specifications
800 micron gate width
Avago Technologies’ ATF-54143 is a high dynamic range,
low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343)
surface mount plastic package.
[1]
The combination of high gain, high linearity and low
noise makes the ATF-54143 ideal for cellular/PCS base
stations, MMDS, and other systems in the 450 MHz to 6
GHz frequency range.
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead-free option available.
Surface Mount Package SOT-343
Specifications
2 GHz; 3V, 60 mA (Typ.)
rd
36.2 dBm output 3 order intercept
20.4 dBm output power at 1 dB gain compression
0.5 dB noise figure
Pin Connections and Package Marking
DRAIN
16.6 dB associated gain
SOURCE
Applications
SOURCE
GATE
Low noise amplifier for cellular/PCS base stations
LNA for WLAN, WLL/RLL and MMDS applications
Note:
General purpose discrete E-PHEMT for other ultra low
Top View. Package marking provides orientation and identification
noise applications
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
[1]
ATF-54143 Absolute Maximum Ratings
Absolute
Maximum
Symbol
Parameter
Units
VDS
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
V
5
VGS
V
-5 to 1
-5 to 1
120
VGD
V
IDS
Drain Current[2]
mA
mW
dBm
dBm
mA
°C
Pdiss
Total Power Dissipation[3]
RF Input Power (Vds=3V, Ids=60mA)
RF Input Power (Vd=0, Ids=0A)
Gate Source Current
725
20 [5]
Pin max. (ON mode)
Pin max. (OFF mode)
20
2[5]
IGS
TCH
Channel Temperature
150
TSTG
θjc
Storage Temperature
Thermal Resistance[4]
°C
-65 to 150
162
°C/W
Notes:
120
100
80
60
40
20
0
0.7V
0.6V
1. Operation of this device in excess of any one of these parameters
may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for T > 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
L
0.5V
5. The device can handle +20 dBm RF Input Power provided I is
GS
limited to 2 mA. I at P
See application section for additional information.
drive level is bias circuit dependent.
GS
1dB
0.4V
0.3V
0
1
2
3
4
5
6
7
V
DS
(V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
[6, 7]
Product Consistency Distribution Charts
160
200
160
120
80
160
Cpk = 0.77
Cpk = 1.35
Cpk = 1.67
Stdev = 0.073
Stdev = 1.41
Stdev = 0.4
120
120
-3 Std
80
-3 Std
+3 Std
+3 Std
80
40
0
40
0
40
0
30
32
34
36
38
40
42
14
15
16
17
18
19
0.25
0.45
0.65
NF (dB)
0.85
1.05
GAIN (dB)
OIP3 (dBm)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
ATF-54143 Electrical Specifications
T = 25°C, RF parameters measured in a test circuit for a typical device
A
[2]
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Vth
Idss
Gm
Operational Gate Voltage
Threshold Voltage
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
V
0.4
0.59
0.38
1
0.75
0.52
5
V
0.18
—
Saturated Drain Current
Transconductance
μA
Vds = 3V, gm = ΔIdss/ΔVgs; mmho
ΔVgs = 0.75-0.7 = 0.05V
230
410
560
Igss
NF
Gate Leakage Current
Noise Figure[1]
Vgd = Vgs = -3V
μA
—
—
200
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB
dB
—
—
0.5
0.3
0.9
—
Ga
Associated Gain[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB
dB
15
—
16.6
23.4
18.5
—
OIP3
Output 3rd Order
Intercept Point[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
33
—
36.2
35.5
—
—
P1dB
Notes:
1dB Compressed
Output Power[1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
—
—
20.4
18.4
—
—
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
50 Ohm
Input
Output
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
DUT
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-
ments.
3
ATF-54143 Typical Performance Curves
0.7
19
18
17
16
15
14
13
12
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
3V
4V
0.3
3V
4V
3V
4V
0.2
0
20
40
I
60
(mA)
80
100
0
20
40
I
60
(mA)
80
100
0
20
40
I
60
(mA)
80
100
ds
ds
ds
Figure 6. Fmin vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 8. Gain vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
ds
ds
Figure 7. Fmin vs. I and V Tuned for
ds ds
Max OIP3 and Min NF at 900 MHz.
ds
ds
42
37
32
27
22
17
12
25
24
23
22
21
20
19
18
40
35
30
25
20
15
3V
4V
3V
4V
3V
4V
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
0
20
40
60
(mA)
80
100
I
I
ds
I
ds
ds
Figure 10. OIP3 vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 11. OIP3 vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 9. Gain vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
ds
ds
ds
ds
ds
ds
24
22
20
18
16
14
12
23
22
21
20
19
18
17
16
15
35
30
25
20
15
10
5
25 C
-40 C
85 C
3V
4V
3V
4V
0
20
40
60
80
100
0
20
40
60
80
100
0
1
2
3
4
5
6
[1]
[1]
I
(mA)
I
(mA)
dq
FREQUENCY (GHz)
dq
Figure 12. P1dB vs. I and V Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 13. P1dB vs. I and V Tuned for
Max OIP3 and Fmin at 900 MHz.
dq
ds
dq
ds
Notes:
1.
I
represents the quiescent drain current without RF drive applied. Under low values of I , the application of RF drive will cause I to increase
ds d
dq
substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
4
ATF-54143 Typical Performance Curves, continued
45
40
35
30
25
20
15
10
21
20.5
20
2
1.5
1.0
0.5
0
25 C
-40 C
85 C
19.5
19
18.5
18
25 C
-40 C
85 C
25 C
-40 C
85 C
17.5
17
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Fmin[2] vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
1.4
1.2
1.0
0.8
0.6
0.4
60 mA
40 mA
80 mA
0.2
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
[1]
Figure 18. Fmin vs. Frequency and I
at 3V.
ds
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, V = 3V, I = 60 mA
DS
DS
[1]
[2]
Freq
Γ
Out_Mag.
ΓOut_Ang.
OIP3
P1dB
(GHz)
(Mag)
(Degrees)
(dBm)
(dBm)
0.9
0.017
0.026
0.013
0.025
115
-85
35.54
36.23
37.54
35.75
18.4
2.0
20.38
20.28
18.09
3.9
173
102
5.8
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
5
ATF-54143 Typical Scattering Parameters, V = 3V, I = 40 mA
DS
DS
Freq.
GHz
S
S
S
S
22
MSG/MAG
dB
11
21
Mag.
12
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.83
0.72
0.70
0.65
0.63
0.62
0.61
0.61
0.63
0.66
0.69
0.71
0.72
0.76
0.83
0.85
0.88
0.89
0.87
0.88
0.87
0.87
0.92
-17.6
-76.9
-114
27.99
25.47
22.52
21.86
19.09
17.38
17.00
15.33
13.91
11.59
9.65
8.01
6.64
5.38
4.20
2.84
1.42
0.23
25.09
18.77
13.37
12.39
9.01
7.40
7.08
5.84
4.96
3.80
3.04
2.51
2.15
1.86
1.62
1.39
1.18
1.03
0.91
0.78
0.64
0.52
0.44
0.38
168.5
130.1
108
103.9
87.4
76.6
74.2
62.6
51.5
0.009
0.036
0.047
0.049
0.057
0.063
0.065
0.072
0.080
0.094
0.106
0.118
0.128
0.134
0.145
0.150
0.149
0.150
0.149
0.143
0.132
0.121
0.116
0.109
80.2
52.4
40.4
38.7
33.3
30.4
29.8
26.6
22.9
14
0.59
0.44
0.33
0.31
0.24
0.20
0.19
0.15
0.12
0.10
0.14
0.17
0.20
0.22
0.27
0.37
0.45
0.51
0.54
0.61
0.65
0.70
0.73
0.76
-12.8
-54.6
-78.7
-83.2
-99.5
-108.6
-110.9
-122.6
-137.5
176.5
138.4
117.6
98.6
73.4
52.8
38.3
25.8
12.7
-4.1
34.45
27.17
24.54
24.03
21.99
20.70
20.37
19.09
17.92
15.33
12.99
11.50
10.24
8.83
8.17
8.57
7.47
7.50
6.60
4.57
3.47
2.04
-120.6
-146.5
-162.1
-165.6
178.5
164.2
138.4
116.5
97.9
80.8
62.6
45.2
28.2
31
11.6
-6.7
4.2
-6.1
-24.5
-42.5
-60.8
-79.8
-96.9
-112.4
-129.7
-148
-164.8
-178.4
170.1
156.1
-17.6
-29.3
-40.6
-56.1
-69.3
-81.6
-95.7
-110.3
-124
-134.6
-144.1
-157.4
13.9
-0.5
-15.1
-31.6
-46.1
-54.8
-62.8
-73.6
-0.86
-2.18
-3.85
-5.61
-7.09
-8.34
-20.1
-34.9
-45.6
-55.9
-68.7
1.05
1.90
Typical Noise Parameters, V = 3V, I = 40 mA
DS
DS
40
Freq
GHz
F
Γ
Γ
R
G
min
dB
opt
Mag.
opt
Ang.
n/50
a
dB
35
30
25
20
15
10
5
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.17
0.22
0.24
0.42
0.45
0.51
0.59
0.69
0.90
1.14
1.17
1.24
1.57
1.64
1.8
0.34
0.32
0.32
0.29
0.29
0.30
0.32
0.34
0.45
0.50
0.52
0.58
0.60
0.69
0.80
34.80
53.00
60.50
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.09
0.16
0.18
0.33
0.56
0.87
1.34
27.83
23.57
22.93
18.35
17.91
16.39
15.40
13.26
11.89
10.95
10.64
9.61
MAG
108.10
111.10
136.00
169.90
-151.60
-119.50
-101.60
-99.60
-79.50
-57.90
-39.70
-22.20
S
21
0
-5
10
-15
0
5
10
FREQUENCY (GHz)
15
20
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
8.36
7.77
7.68
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
6
ATF-54143 Typical Scattering Parameters, V = 3V, I = 60 mA
DS
DS
Freq.
GHz
S
S
S
S
22
MSG/MAG
dB
11
21
12
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.81
0.71
0.69
0.64
0.62
0.62
0.60
0.60
0.62
0.66
0.69
0.70
0.72
0.76
0.83
0.85
0.88
0.89
0.88
0.88
0.88
0.88
0.92
-18.9
-80.8
-117.9
-124.4
-149.8
-164.9
-168.3
176.2
162.3
137.1
115.5
97.2
80.2
62.2
45.0
28.4
13.9
-0.2
28.84
26.04
22.93
22.24
19.40
17.66
17.28
15.58
14.15
11.81
9.87
8.22
6.85
5.58
4.40
3.06
1.60
0.43
27.66
20.05
14.01
12.94
9.34
7.64
7.31
6.01
5.10
3.90
3.11
2.58
2.20
1.90
1.66
1.42
1.20
1.05
0.93
0.80
0.66
0.54
0.46
0.40
167.6
128.0
106.2
102.2
86.1
75.6
73.3
61.8
51.0
0.01
0.03
0.04
0.05
0.05
0.06
0.06
0.07
0.08
0.09
0.11
0.12
0.13
0.14
0.15
0.15
0.15
0.15
0.15
0.14
0.13
0.12
0.12
0.11
80.0
52.4
41.8
40.4
36.1
33.8
33.3
30.1
26.5
17.1
6.8
-3.9
-15.8
-28.0
-39.6
-55.1
-68.6
-80.9
-94.9
-109.3
-122.9
-133.7
-143.2
-156.3
0.54
0.40
0.29
0.27
0.21
0.17
0.17
0.13
0.11
0.10
0.14
0.18
0.20
0.23
0.29
0.38
0.46
0.51
0.55
0.61
0.66
0.70
0.73
0.76
-14.0
-58.8
-83.8
-88.5
-105.2
-114.7
-117.0
-129.7
-146.5
165.2
131.5
112.4
94.3
70.1
50.6
36.8
24.4
11.3
-5.2
34.42
28.25
25.44
24.13
22.71
21.05
20.86
19.34
18. 04
1 4.87
13.27
11.72
10.22
9.02
8.38
8.71
7.55
7.55
6.70
5.01
3.73
2.54
30.8
11.7
-6.4
-24.0
-41.8
-59.9
-78.7
-95.8
-111.1
-128.0
-146.1
-162.7
-176.6
171.9
157.9
-14.6
-30.6
-45.0
-54.5
-62.5
-73.4
-0.65
-1.98
-3.62
-5.37
-6.83
-8.01
-20.8
-35.0
-45.8
-56.1
-68.4
1.57
2.22
Typical Noise Parameters, V = 3V, I = 60 mA
DS
DS
40
Freq
GHz
F
dB
Γ
Γ
R
G
dB
min
opt
opt
n/50
a
35
30
25
20
15
10
5
Mag.
Ang.
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.15
0.20
0.22
0.42
0.45
0.52
0.59
0.70
0.93
1.16
1.19
1.26
1.63
1.69
1.73
0.34
0.32
0.32
0.27
0.27
0.26
0.29
0.36
0.47
0.52
0.55
0.60
0.62
0.70
0.79
42.3
62.8
67.6
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.10
0.18
0.20
0.37
0.62
0.95
1.45
28.50
24.18
23.47
18.67
18.29
16.65
15.56
13.53
12.13
11.10
10.95
9.73
MAG
116.3
120.1
145.8
178.0
-145.4
-116.0
-98.9
-96.5
-77.1
-56.1
-38.5
-21.5
S
21
0
-5
10
-15
0
5
10
FREQUENCY (GHz)
15
20
Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
8.56
7.97
7.76
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
7
ATF-54143 Typical Scattering Parameters, V = 3V, I = 80 mA
DS
DS
Freq.
GHz
S
S
S
S
22
MSG/MAG
dB
11
21
12
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.98
0.80
0.72
0.70
0.66
0.65
0.64
0.64
0.63
0.66
0.69
0.72
0.73
0.74
0.78
0.84
0.86
0.88
0.89
0.87
0.87
0.86
0.86
0.91
-20.4
-85.9
-123.4
-129.9
-154.6
-169.5
-172.8
172.1
158.5
133.8
112.5
94.3
77.4
59.4
42.1
25.6
11.4
-2.6
28.32
25.32
22.10
21.40
18.55
16.81
16.42
14.69
13.24
10.81
8.74
7.03
5.63
4.26
2.98
1.51
0.00
-1.15
-2.18
-3.48
-5.02
-6.65
-7.92
-8.92
26.05
18.45
12.73
11.75
8.46
6.92
6.62
5.42
4.59
3.47
2.74
2.25
1.91
1.63
1.41
1.19
1.00
0.88
0.78
0.67
0.56
0.47
0.40
0.36
167.1
126.8
105.2
101.3
85.4
74.9
72.6
61.1
50.1
0.01
0.04
0.05
0.05
0.06
0.07
0.07
0.09
0.10
0.12
0.13
0.14
0.15
0.16
0.17
0.16
0.16
0.16
0.15
0.14
0.13
0.12
0.11
0.10
79.4
53.3
43.9
42.7
38.6
35.7
35.0
30.6
0.26
0.29
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.33
0.39
0.42
0.44
0.47
0.52
0.59
0.64
0.68
0.70
0.73
0.76
0.78
0.79
0.81
-27.6
-104.9
-138.8
-144.3
-165.0
-177.6
179.4
164.4
150.2
126.1
107.8
91.8
75.5
55.5
37.8
24.0
11.8
-0.8
34.16
26.64
24.06
23.71
21.49
19.95
19.76
17.80
16.62
14.61
12.03
10.52
9.12
7.78
7.12
6.96
6.11
5.67
5.08
3.67
2.65
25.5
13.4
1.2
29.9
11.1
-6.5
-11.3
-24.5
-38.1
-51.1
-66.8
-79.8
-91.7
-105.6
-119.5
-132.3
-141.7
-150.4
-163.0
-23.5
-41.1
-58.7
-76.4
-92.0
-105.9
-121.7
-138.7
-153.9
-165.9
-175.9
171.2
-17.0
-33.3
-47.3
-55.6
-63.4
-74.2
-16.7
-31.7
-44.9
-54.9
-64.2
-76.2
1.48
0.49
1.29
Typical Noise Parameters, V = 3V, I = 80 mA
DS
DS
40
Freq
GHz
F
dB
Γ
Γ
R
G
dB
min
opt
opt
n/50
a
35
30
25
20
15
10
5
Mag.
Ang.
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.19
0.24
0.25
0.43
0.42
0.51
0.61
0.70
0.94
1.20
1.26
1.34
1.74
1.82
1.94
0.23
0.24
0.25
0.28
0.29
0.30
0.35
0.41
0.52
0.56
0.58
0.62
0.63
0.71
0.79
66.9
84.3
87.3
0.04
0.04
0.04
0.04
0.04
0.03
0.03
0.06
0.13
0.23
0.26
0.46
0.76
1.17
1.74
27.93
24.13
23.30
18.55
18.15
16.44
15.13
12.97
11.42
10.48
10.11
8.86
MAG
S
21
134.8
138.8
159.5
-173
-141.6
-113.5
-97.1
-94.8
-75.8
-55.5
-37.7
-20.8
0
-5
10
-15
0
5
10
FREQUENCY (GHz)
15
20
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 3V, 80 mA.
7.59
6.97
6.65
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-54143 Typical Scattering Parameters, V = 4V, I = 60 mA
DS
DS
Freq.
GHz
S
S
S
S
22
MSG/MAG
dB
11
21
12
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.81
0.71
0.69
0.64
0.62
0.61
0.60
0.60
0.62
0.65
0.68
0.70
0.72
0.76
0.83
0.86
0.88
0.90
0.87
0.88
0.88
0.87
0.92
-18.6
-80.2
-117.3
-123.8
-149.2
-164.5
-167.8
176.6
162.6
137.4
115.9
97.6
80.6
62.6
45.4
28.5
14.1
-0.4
28.88
26.11
23.01
22.33
19.49
17.75
17.36
15.66
14.23
11.91
10.00
8.36
7.01
5.76
4.60
3.28
1.87
0.69
27.80
20.22
14.15
13.07
9.43
7.72
7.38
6.07
5.15
3.94
3.16
2.62
2.24
1.94
1.70
1.46
1.24
1.08
0.96
0.82
0.68
0.55
0.46
0.40
167.8
128.3
106.4
102.4
86.2
75.7
73.3
61.9
51.1
0.01
0.03
0.04
0.04
0.05
0.06
0.06
0.07
0.07
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.15
0.15
0.15
0.15
0.14
0.13
0.12
0.11
80.1
52.4
41.7
40.2
36.1
34.0
33.5
30.7
27.3
18.7
9.0
-1.4
-12.9
-24.7
-36.1
-51.8
-65.4
-78.0
-92.2
-107.3
-121.2
-132.2
-142.3
-155.6
0.58
0.42
0.31
0.29
0.22
0.18
0.18
0.14
0.11
0.07
0.09
0.12
0.15
0.17
0.23
0.32
0.41
0.47
0.51
0.58
0.63
0.69
0.72
0.75
-12.6
-52.3
-73.3
-76.9
-89.4
-95.5
-97.0
-104.0
-113.4
-154.7
152.5
127.9
106.9
78.9
34.44
28.29
25.49
25.14
22.76
21.09
20.90
19.38
18.67
15.46
13.20
11.73
10.47
9.31
8.69
9.88
9.17
8.57
8.06
4.90
3.86
2.65
30.9
11.7
-6.6
-24.3
-42.3
-60.5
-79.6
-97.0
-112.8
-130.2
-148.8
-166.0
179.8
168.4
154.3
56.8
42.1
29.4
16.0
-14.9
-31.4
-46.0
-54.8
-62.8
-73.7
-0.39
-1.72
-3.38
-5.17
-6.73
-7.93
-1.1
-17.6
-32.6
-43.7
-54.2
-67.2
1.33
2.26
Typical Noise Parameters, V = 4V, I = 60 mA
DS
DS
40
Freq
GHz
F
dB
Γ
Γ
R
G
dB
min
opt
opt
n/50
a
35
30
25
20
15
10
5
Mag.
Ang.
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.17
0.25
0.27
0.45
0.49
0.56
0.63
0.73
0.96
1.20
1.23
1.33
1.66
1.71
1.85
0.33
0.31
0.31
0.27
0.27
0.26
0.28
0.35
0.47
0.52
0.54
0.60
0.63
0.71
0.82
34.30
60.30
68.10
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.11
0.19
0.21
0.38
0.64
0.99
1.51
28.02
24.12
23.43
18.72
18.35
16.71
15.58
13.62
12.25
11.23
11.02
9.94
MAG
MSG
S
MAG
21
115.00
119.80
143.50
176.80
-145.90
-116.20
-98.80
-96.90
-77.40
-56.20
-38.60
-21.30
0
-5
10
-15
0
5
10
FREQUENCY (GHz)
15
20
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 4V, 60 mA.
8.81
8.22
8.12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
also provide a termination for low frequency mixing
products. These mixing products are as a result of two
or more in-band signals mixing and producing third
order in-band distortion products. The low frequency or
difference mixing products are bypassed by C3 and C6.
For best suppression of third order distortion products
based on the CDMA 1.25 MHz signal spacing, C3 and C6
should be 0.1 μF in value. Smaller values of capacitance
will not suppress the generation of the 1.25 MHz differ-
ence signal and as a result will show up as poorer two
tone IP3 results.
ATF-54143 Applications Information
Introduction
Avago Technologies’ ATF-54143 is a low noise
enhancement mode PHEMT designed for use in low
cost commercial applications in the VHF through 6 GHz
frequency range. As opposed to a typical depletion
mode PHEMT where the gate must be made negative
with respect to the source for proper operation, an
enhancement mode PHEMT requires that the gate
be made more positive than the source for normal
operation. Therefore a negative power supply voltage is
not required for an enhancement mode device. Biasing
an enhancement mode PHEMT is much like biasing the
typical bipolar junction transistor. Instead of a 0.7V base
to emitter voltage, the ATF-54143 enhancement mode
PHEMT requires about a 0.6V potential between the
gate and source for a nominal drain current of 60 mA.
Bias Networks
One of the major advantages of the enhancement mode
technology is that it allows the designer to be able to dc
ground the source leads and then merely apply a positive
voltage on the gate to set the desired amount of quiescent
drain current I .
d
Whereas a depletion mode PHEMT pulls maximum
Matching Networks
drain current when V = 0V, an enhancement mode
gs
The techniques for impedance matching an en-
hancement mode device are very similar to those for
matching a depletion mode device. The only difference
is in the method of supplying gate bias. S and Noise
Parameters for various bias conditions are listed in
this data sheet. The circuit shown in Figure 23 shows a
typical LNA circuit normally used for 900 and 1900 MHz
applications (Consult the Avago Technologies website
for application notes covering specific applications).
High pass impedance matching networks consisting
of L1/C1 and L4/C4 provide the appropriate match for
noise figure, gain, S11 and S22. The high pass structure
also provides low frequency gain reduction which can
be beneficial from the standpoint of improving out-of-
band rejection at lower frequencies.
PHEMT pulls only a small amount of leakage current
when V =0V. Only when V is increased above V ,
gs
gs
to
the device threshold voltage, will drain current start to
flow. At a V of 3V and a nominal V of 0.6V, the drain
ds
gs
current I will be approximately 60 mA. The data sheet
d
suggests a minimum and maximum
V
gs
over which
the desired amount of drain current will be achieved.
It is also important to note that if the gate terminal is
left open circuited, the device will pull some amount of
drain current due to leakage current creating a voltage
differential between the gate and source terminals.
Passive Biasing
Passive biasing of the ATF-54143 is accomplished by
the use of a voltage divider consisting of R1 and R2. The
voltage for the divider is derived from the drain voltage
which provides a form of voltage feedback through the
use of R3 to help keep drain current constant. Resistor
R5 (approximately 10k) provides current limiting for
the gate of enhancement mode devices such as the
ATF-54143. This is especially important when the device
OUTPUT
C4
INPUT
C1
Q1
Z
o
Z
o
L4
J2
J1
L1
L2
L3
C2
C3
C5
R4
R5
R3
is driven to P or P
.
1dB
SAT
C6
Resistor R3 is calculated based on desired V , I and
ds ds
available power supply voltage.
R1
R2
V
dd
Figure 23. Typical ATF-54143 LNA with Passive Biasing.
R3 = V – V
(1)
DD
ds
p
I
+ I
BB
Capacitors C2 and C5 provide a low impedance in-band
RF bypass for the matching networks. Resistors R3 and
R4 provide a very important low frequency termina-
tion for the device. The resistive termination improves
low frequency stability. Capacitors C3 and C6 provide
the low frequency RF bypass for resistors R3 and R4.
Their value should be chosen carefully as C3 and C6
ds
V
is the power supply voltage.
is the device drain to source voltage.
DD
V
ds
I
is the desired drain current.
ds
10
I
is the current flowing through the R1/R2 resistor
combined series value of these resistors also sets the
amount of extra current consumed by the bias network.
The equations that describe the circuit’s operation are
as follows.
BB
voltage divider network.
The values of resistors R1 and R2 are calculated with the
following formulas
V = V + (I • R4) (1)
E
ds
ds
R1 = V
(2)
gs
p
I
BB
V
– V
(2)
DD
E
R3 =
p
I
ds
(V – V ) R1
R2 = ds
gs
(3)
V = V – V
BE
(3)
(4)
B
E
V
gs
R1
R1 + R2
V =
B
V
Example Circuit
DD
p
V
V
= 5V
= 3V
= 60 mA
DD
V
= I (R1 + R2) (5)
BB
ds
DD
I
ds
V
= 0.59V
Rearranging equation (4) provides the following
formula:
gs
Choose I to be at least 10X the normal expected gate
BB
leakage current. I was chosen to be 2 mA for this
example. Using equations (1), (2), and (3) the resistors
are calculated as follows
BB
R (V – V ) (4A)
1
DD
B
R2 =
V
B
R1 = 295
R2 = 1205
R3 = 32.3
and rearranging equation (5) provides the following
formula:
V
DD
(5A)
Active Biasing
R1 =
9
Active biasing provides a means of keeping the
quiescent bias point constant over temperature and
constant over lot to lot variations in device dc per-
formance. The advantage of the active biasing of an
enhancement mode PHEMT versus a depletion mode
PHEMT is that a negative power source is not required.
The techniques of active biasing an enhancement
mode device are very similar to those used to bias a
bipolar junction transistor.
I
(
1 + V – V
B
p
)
BB
DD
V
B
Example Circuit
= 5V
V
DD
V
ds
= 3V
I
= 60 mA
ds
C4
OUTPUT
R4 = 10
= 0.7V
C1
INPUT
Q1
Zo
Zo
V
BE
L1
L4
L2
L3
Equation (1) calculates the required voltage at the
C2
C3
C5
R4
emitter of the PNP transistor based on desired V and
R5
R6
ds
I
through resistor R4 to be 3.6V. Equation (2) calcu-
ds
lates the value of resistor R3 which determines the
C7
Q2
C6
drain current I . In the example R3=23.3. Equation
ds
Vdd
(3) calculates the voltage required at the junction of
resistors R1 and R2. This voltage plus the step-up of
the base emitter junction determines the regulated
R7
R3
R2
R1
Figure 24. Typical ATF-54143 LNA with Active Biasing.
V
. Equations (4) and (5) are solved simultaneously
ds
to determine the value of resistors R1 and R2. In the
example R1=1450 and R2=1050. R7 is chosen to
be 1k. This resistor keeps a small amount of current
flowing through Q2 to help maintain bias stability. R6 is
chosen to be 10k. This value of resistance is necessary
to limit Q1 gate current in the presence of high RF drive
An active bias scheme is shown in Figure 24. R1 and
R2 provide a constant voltage source at the base of a
PNP transistor at Q2. The constant voltage at the base
of Q2 is raised by 0.7 volts at the emitter. The constant
emitter voltage plus the regulated V
supply are
DD
present across resistor R3. Constant voltage across R3
provides a constant current supply for the drain current.
Resistors R1 and R2 are used to set the desired Vds. The
level (especially when Q1 is driven to P
pression point).
gain com-
1dB
11
ATF-54143 Die Model
Advanced_Curtice2_Model
MESFETM1
NFET=yes
PFET=no
Vto=0.3
Rf=
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.8
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Gscap=2
Cgs=1.73 pF
Cgd=0.255 pF
Gdcap=2
Beta=0.9
Lambda=82e-3
Alpha=13
Tau=
Fc=0.65
Rgd=0.25 Ohm
Rd=1.0125 Ohm
Rg=1.0 Ohm
Rs=0.3375 Ohm
Ld=
Lg=0.18 nH
Ls=
Cds=0.27 pF
Rc=250 Ohm
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.25 Ohm
Eg=
ATF-54143 curtice ADS Model
INSIDE Package
VAR
VAR1
K=5
Var
Egn
TLINP
TL1
TLINP
TL2
Z2=85
Z1=30
Z=Z2/2 Ohm
L=20 0 mil
K=K
Z=Z2/2 Ohm
L=20 0 mil
K=K
C
A=0.0000
F=1 GHz
TanD=0.001
A=0.0000
F=1 GHz
TanD=0.001
GaAsFET
C1
FET1
GATE
SOURCE
C=0.13 pF
Mode1=MESFETM1
Mode=Nonlinear
L
L6
L
L1
Port
G
Num=1
TLINP
TL7
TLINP
TL8
TLINP
TL4
TLINP
TL3
Z=Z1 Ohm Z=Z2 Ohm
Port
S2
L=0.175 nH
R=0.001
L=0.477 nH
R=0.001
Z=Z2/2 OhmZ=Z1 Ohm
L=5.0 mil L=15.0 mil
Num=4
L=15 mil
K=1
A=0.000
F=1 GHz
L=25 mil
K=K
A=0.000
F=1 GHz
K=K
K=1
C
C2
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
C=0.159 pF
DRAIN
TanD=0.001 TanD=0.001
SOURCE
L
TLINP
TL5
TLINP
TL6
Port
D
Num=3
L7
L=0.746 nH
R=0.001
L
Port
TLINP
Z=Z2 Ohm Z=Z1 Ohm
L=26.0 mil L=15.0 mil
TLINP
L4
MSub
S1
TL9
TL10
L=0.4 nH
R=0.001
Num=2
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
K=K
K=1
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
MSUB
MSub1
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
12
Designing with S and Noise Parameters and the Non-Linear
Model
For Further Information
The information presented here is an introduction
to the use of the ATF-54143 enhancement mode
PHEMT. More detailed application circuit information
is available from Avago Technologies. Consult the web
page or your local Avago Technologies sales representa-
tive.
The non-linear model describing the ATF-54143
includes both the die and associated package model.
The package model includes the effect of the pins but
does not include the effect of the additional source
inductance associated with grounding the source leads
through the printed circuit board. The device S and
Noise Parameters do include the effect of 0.020 inch
thickness printed circuit board vias. When comparing
simulation results between the measured S parameters
and the simulated non-linear model, be sure to include
the effect of the printed circuit board to get an accurate
comparison. This is shown schematically in Figure 25.
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
DRAIN
SOURCE
W=40.0 mil
ATF-54143
W=40.0 mil
VIA2
V4
MSub
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
SOURCE
GATE
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
Rough=0 mil
Figure 25. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
13
Noise Parameter Applications Information
Typically for FETs, the higher G usually infers that an
impedance much higher than 50ý is required for the
F
values at 2 GHz and higher are based on measure-
o
min
ments while the F
lated. The F
below 2 GHz have been extrapo-
mins
device to produce F . At VHF frequencies and even
values are based on a set of 16 noise
min
min
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching
to such a high impedance requires very hi-Q compo-
nents in order to minimize circuit losses. As an example
at 900 MHz, when airwwound coils (Q>100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30
to 50 range results in additional loss over the airwound
coil. Losses as high as 0.5 dB or greater add to the
figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measure-
ments, a true F
is calculated. F
represents the true
min
min
minimum noise figure of the device when the device is
presented with an impedance matching network that
transforms the source impedance, typically 50ý, to an
impedance represented by the reflection coefficient G .
o
The designer must design a matching network that will
present G to the device with minimal associated circuit
o
losses. The noise figure of the completed amplifier is
equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
typical 0.15 dB F
of the device creating an amplifier
min
noise figure of nearly 0.65 dB. A discussion concerning
calculated and measured circuit losses and their effect
on amplifier noise figure is covered in Avago Technolo-
gies Application 1085.
noise figure of the device is equal to F
only when
min
the device is presented with G . If the reflection coef-
o
ficient of the matching network is other than G , then
o
the noise figure of the device will be greater than F
based on the following equation.
min
2
NF = Fmin + 4 Rn
Zo (|1 +
|
s
–
o
|
o|2)(1- |
s|2)
Where R /Z is the normalized noise resistance, G is
n
o
o
the optimum reflection coefficient required to produce
and G is the reflection coefficient of the source
F
min
s
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. G is typically fairly
o
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower G as compared to narrower gate width devices.
o
14
Ordering Information
Part Number
No. of Devices
3000
Container
7”Reel
ATF-54143-TR1G
ATF-54143-TR2G
ATF-54143-BLKG
10000
13”Reel
100
antistatic bag
Package Dimensions
Outline 43 (SO%-343/SC70 4 lead)
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30 (.051)
BSC
1.30
(0.051)
1.00
(0.039)
HE
E
2.00
(0.079)
0.60
(0.024)
1.15 (.045) BSC
b1
0.9
(0.035)
D
1.15
(0.045)
mm
(inches)
A
A2
Dimensions in
A1
b
C
L
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
b1
c
L
6. Package surface to be mirror finish.
15
Device Orientation
REEL
4 mm
4Fx
CARRIER
TAPE
8 mm
4Fx
4Fx
4Fx
USER
FEED
DIRECTION
TOP VIEW
END VIEW
COVER TAPE
Tape Dimensions For Outline 4T
P
2
P
P
D
o
E
F
W
C
D
1
t (CARRIER TAPE THICKNESS)
1
T (COVER TAPE THICKNESS)
t
K
10 MAX.
10 MAX.
o
A
B
o
o
DESCRIPTION
SYMBOL
SIZE (mm)
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
o
o
o
BOTTOM HOLE DIAMETER
D
1
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.10
4.00 0.10
1.75 0.10
0.061 + 0.002
0.157 0.004
0.069 0.004
P
o
E
CARRIER TAPE
COVER TAPE
DISTANCE
WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012
t
0.254 0.02
0.0100 0.0008
1
WIDTH
TAPE THICKNESS
C
T
5.40 0.10
0.062 0.001
0.205 + 0.004
0.0025 0.0004
t
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0620EN
AV02-0488EN - June 8, 2012
相关型号：
ATF-54143-BLK
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT
ATF-54143-BLKG
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AVAGO
ATF-54143-TR1
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT
ATF-54143-TR1G
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AVAGO
ATF-54143-TR2
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT
ATF-54143-TR2G
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
AVAGO
ATF-541M4-BLKG
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4
AGILENT
©2020 ICPDF网 联系我们和版权申明