ATF-531P8 [AGILENT]
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package; 高线性度增强模式伪HEMT在2×2毫米的LPCC包装
| 型号： | ATF-531P8 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |
| 文件： | 总16页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent ATF-531P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
Pin Connections and
Package Marking
Description
Agilent Technologies’s
• Excellent uniformity in product
specifications
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC[3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
• Small package size:
Pin 8
Pin 7 (Drain)
Pin 6
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
Pin 5
Pin 4 (Source)
• Tape-and-reel packaging option
available
Bottom View
Pin 1 (Source)
Pin 8
Specifications
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
2 GHz; 4V, 135 mA (Typ.)
Pin 2 (Gate)
Pin 3
Pin 7 (Drain)
Pin 6
3Px
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
Pin 4 (Source)
Pin 5
Top View
Note:
• 10.7 dB LFOM[4]
Package marking provides orientation and
identification:
• 24.5 dBm output power at 1 dB gain
compression
“3P” = Device Code
devices are 100% RF & DC tested.
“x” = Date code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
Applications
• Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
• General purpose discrete E-pHEMT
for other high linearity applications
ATF-531P8 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
7
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/°C for TB > 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
V
-5 to 1
-5 to 1
300
VGD
IDS
V
mA
mA
W
IGS
Gate Current
20
Pdiss
Pin max.
TCH
Total Power Dissipation[3]
RF Input Power
1
at P
drive level is bias circuit dependent.
1dB
dBm
°C
+24
150
Channel Temperature
Storage Temperature
Thermal Resistance[4]
TSTG
θch_b
°C
-65 to 150
63
°C/W
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA[5,6]
160
120
80
40
0
180
150
120
90
400
300
200
100
Cpk = 1.2
Cpk = 1.0
0.9 V
0.8 V
Stdev = 0.71
Stdev = 0.14
-3 Std
+3 Std
-3 Std
+3 Std
0.7 V
60
0.6 V
0.5 V
30
0
0
0
37
35
36
38
39
40
41
0
0.3
0.6
0.9
1.2
1
2
3
4
5
6
7
OIP3 (dBm)
NF (dB)
V
(V)
DS
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
Figure 2. NF
Nominal = 0.6, USL = 1.0.
Figure 1. Typical I-V Curves
(V = 0.1 per step).
gs
300
250
200
150
100
50
240
200
160
Cpk = 2.0
Stdev = 0.12
+3 Std
Stdev = 0.21
-3 Std
+3 Std
-3 Std
120
80
40
0
18.5
0
24.2
19.5
24.6
20.5
21.5
24.4
24.8
25
25.2
GAIN (dB)
P1dB (dBm)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
Figure 5. P1dB
Nominal = 24.6.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
ATF-531P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Vth
Idss
Gm
Operational Gate Voltage
Threshold Voltage
Vds = 4V, Ids = 135 mA
Vds = 4V, Ids = 8 mA
Vds = 4V, Vgs = 0V
V
—
—
—
—
0.68
0.3
—
—
—
—
V
Saturated Drain Current
Transconductance
µA
3.7
Vds = 4.5V, Gm = ∆Idss/∆Vgs;
?Vgs = Vgs1 - Vgs2
mmho
650
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss
NF
Gate Leakage Current
Noise Figure[1]
Vds = 0V, Vgs = -4V
µA
-10
-0.34
—
f = 2 GHz
f = 900 MHz
dB
dB
—
—
0.6
0.6
1
—
G
Gain[1]
f = 2 GHz
f = 900 MHz
dB
dB
18.5
—
20
25
21.5
—
OIP3
P1dB
PAE
Output 3rd Order
f = 2 GHz
f = 900 MHz
dBm
dBm
35.5
—
38
37
—
—
Intercept Point[1,2]
Output 1dB
Compressed[1]
f = 2 GHz
f = 900 MHz
dBm
dBm
—
—
24.5
23
—
—
Power Added Efficiency
f = 2 GHz
f = 900 MHz
%
%
—
—
57
45
—
—
ACLR
Notes:
Adjacent Channel Leakage
Power Ratio[1,3]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
dBc
—
—
-68
-64
—
—
1. Measurements obtained using production test board described in Figure 6.
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
50 Ohm
Input
Output
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Input
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.66
Γ_ang = -165°
(1.8 dB loss)
Matching Circuit
Γ_mag = 0.09
Γ_ang = 118°
(1.1 dB loss)
DUT
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
3
2.2 pF
110 Ohm
.03 λ
50 Ohm
.02 λ
50 Ohm
.02 λ
110 Ohm
.03 λ
4.7 pF
12 nH
3.3 pF
RF Output
RF Input
DUT
22 nH
15 Ohm
2.2 µF
Drain
DC Supply
100 pF
Gate
DC Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA
quiesent bias. The gamma load and source over frequency are shown in the table below:
Freq
(GHz)
Gamma Source
Gamma Load
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
Mag
Ang
Mag
Ang
0.9
2.0
3.9
5.8
0.616
0.310
0.421
0.402
-37.1
34.5
0.249
0.285
0.437
0.418
130.0
168.3
-161.6
-134.1
40.3
41.5
41.5
41.0
16.5
13.4
10.5
7.9
23.4
24.8
24.7
24.7
43.2
51.9
42.8
36.6
167.5
-162.8
4
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
45
40
35
30
25
20
45
40
35
30
25
20
45
40
35
30
25
20
3V
4V
5V
3V
4V
5V
3V
4V
5V
75
90
105 120 135 150 165 180
75
90
105 120 135 150 165 180
75
90
105 120 135 150 165 180
I
(mA)
I
ds
(mA)
I
(mA)
ds
ds
Figure 9. OIP3 vs. I and V at 2 GHz.
Figure 8. OIP3 vs. I and V at 900 MHz.
Figure 10. OIP3 vs. I and V at 3.9 GHz.
ds ds
ds
ds
ds
ds
12
10
8
17
16
15
14
13
12
11
10
17
16
15
14
13
12
11
10
6
4
3V
4V
5V
3V
4V
5V
3V
4V
5V
2
0
75
90
105 120 135 150 165 180
(mA)
75
90
105 120 135 150 165 180
(mA)
75
90 105 120 135 150 165 180
(mA)
I
ds
I
I
ds
ds
Figure 13. Small Signal Gain vs. I and V
ds
Figure 11. Small Signal Gain vs. I and V
ds
Figure 12. Small Signal Gain vs. I and V
ds
ds
ds
ds
at 3.9 GHz.
at 900 MHz.
at 2 GHz.
30
30
30
25
20
25
20
25
20
15
15
15
3V
4V
5V
3V
4V
5V
3V
4V
5V
10
10
10
75
90
105 120 135 150 165 180
(mA)
75
90
105 120 135 150 165 180
(mA)
75
90
105 120 135 150 165 180
(mA)
I
I
dq
I
dq
dq
Figure 15. P1dB vs. I and V at 2 GHz.
Figure 14. P1dB vs. I and V at 900 MHz.
Figure 16. P1dB vs. I and V at 3.9 GHz.
dq ds
dq
ds
dq
ds
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
5
ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
60
50
40
30
20
10
0
60
50
40
30
20
10
0
60
50
40
30
20
10
0
3V
4V
5V
3V
4V
5V
3V
4V
5V
75
90
105 120 135 150 165 180
75
90
105 120 135 150 165 180
75
90
105 120 135 150 165 180
I
dq
(mA)
I
(mA)
dq
I
(mA)
dq
Figure 17. PAE vs. I and V at 900 MHz.
dq ds
Figure 18. PAE vs. I and V at 2 GHz.
dq ds
Figure 19. PAE vs. I and V at 3.9 GHz.
dq ds
45
40
35
30
25
20
12
10
8
30
25
20
15
10
6
4
3V
4V
5V
3V
4V
5V
3V
4V
5V
2
0
75
90
105 120 135 150 165 180
(mA)
75
90
105 120 135 150 165 180
(mA)
75
90
105 120 135 150 165 180
(mA)
I
ds
I
ds
I
dq
Figure 20. OIP3 vs. I and V at 5.8 GHz.
ds ds
Figure 21. Small Signal Gain vs. I and V
ds
Figure 22. P1dB vs. I and V at 5.8 GHz.
dq ds
ds
at 5.8 GHz.
60
50
40
30
20
10
0
3V
4V
5V
75
90
105 120 135 150 165 180
(mA)
I
dq
Figure 23. PAE vs. I and V at 5.8 GHz.
dq ds
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
6
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3, continued
45
40
35
30
25
20
20
15
10
5
30
25
20
15
10
-40°C
25°C
85°C
-40°C
25°C
85°C
-40°C
25°C
85°C
0
0.5
0.5
1.5
2.5
3.5
4.5
5.5
1.5
2.5
3.5
4.5
5.5
0.5
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. OIP3 vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
Figure 25. Small Signal Gain vs. Temp and
Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
80
70
60
50
40
30
20
-40°C
25°C
85°C
10
0
0.5
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 27. PAE vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
7
ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.626
0.704
0.761
0.794
0.815
0.824
0.834
0.840
0.845
0.848
0.854
0.857
0.853
0.853
0.855
0.858
0.864
0.871
0.869
0.880
0.883
0.884
0.874
0.874
0.877
0.884
0.894
0.896
0.898
0.918
-59.4
-97.4
-119.4
-133.8
-142.5
-149.6
-155.1
-159.7
-163.3
-166.4
-177.7
175.9
174.4
168.9
161.6
150.8
140.7
131.7
123.5
115.2
106.8
95.7
33.20 45.702
31.41 37.192
29.53 29.950
27.78 24.477
26.32 20.693
24.99 17.760
23.82 15.516
22.76 13.742
21.83 12.346
20.96 11.164
17.59 7.579
15.60 6.024
15.36 5.863
13.79 4.894
11.83 3.902
154.5
135.8
123.5
114.8
108.9
103.9
99.9
96.6
93.6
91.0
80.6
73.9
72.6
66.5
57.9
44.6
31.6
19.4
7.5
-40.00 0.010
-35.92 0.016
-34.42 0.019
-33.56 0.021
-32.77 0.023
-32.77 0.023
-32.40 0.024
-32.40 0.024
-32.04 0.025
-32.04 0.025
-31.37 0.027
-30.75 0.029
-30.46 0.030
-29.90 0.032
-29.12 0.035
-27.74 0.041
-26.56 0.047
-25.35 0.054
-24.29 0.061
-23.35 0.068
-22.27 0.077
-21.41 0.085
-20.63 0.093
-19.91 0.101
-19.49 0.106
-19.02 0.112
-18.71 0.116
-18.49 0.119
-18.49 0.119
-18.94 0.113
62.6
48.8
39.1
33.7
30.0
27.4
25.8
24.6
24.2
23.8
23.5
24.4
24.9
25.8
26.6
26.5
24.3
21.2
17.4
12.6
7.0
0.410
0.384
0.370
0.360
0.355
0.351
0.349
0.349
0.349
0.347
0.344
0.344
0.335
0.339
0.337
0.356
0.378
0.402
0.427
0.449
0.465
0.489
0.505
0.544
0.596
0.638
0.662
0.699
0.748
0.718
-44.4
-79.2
-101.8
-117.6
-127.1
-135.5
-141.9
-146.9
-151.1
-154.3
-165.8
-171.2
-171.8
-176.8
177.0
168.5
160.6
152.4
144.6
136.1
127.4
116.6
106.0
97.2
36.60
33.66
31.98
30.67
29.54
28.88
28.11
27.58
26.94
26.50
24.48
23.17
22.91
21.85
19.60
16.23
14.19
12.69
11.18
10.39
9.70
9.27
7.20
5.48
4.04
2.73
1.77
0.70
2.906
2.292
1.879
1.593
1.370
1.226
1.084
-4.3
-16.1
-29.0
-41.6
-52.8
-64.5
-74.6
-85.4
-93.6
-102.6
-110.5
-0.8
-8.8
8.70
7.20
6.30
5.46
4.95
4.29
4.06
2.82
85.1
74.1
63.3
57.9
46.8
43.3
31.9
20.8
-0.34 0.962
-1.39 0.852
-2.52 0.748
-3.64 0.658
-4.81 0.575
-5.66 0.521
-7.25 0.434
-8.61 0.371
-16.6
-24.6
-31.9
-39.8
-47.8
-55.1
-62.6
85.9
74.7
65.9
56.1
47.7
39.3
1.75
Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
0.50
0.59
0.60
0.72
0.81
0.90
1.01
1.10
1.13
1.34
1.48
1.58
1.68
1.89
2.15
2.34
0.20
0.25
0.35
0.40
0.57
0.61
0.63
0.67
0.70
0.72
0.75
0.76
0.80
0.84
0.82
0.85
166.00
169.00
171.00
173.00
-173.50
-167.70
-163.50
-158.20
-153.90
-142.70
-135.40
-133.30
-125.00
-116.10
-106.90
-95.10
0.041
0.044
0.036
0.039
0.029
0.033
0.041
0.054
0.068
0.139
0.229
0.278
0.470
0.860
1.170
2.010
28.26
24.27
24.15
21.14
20.07
18.73
16.91
15.86
15.12
13.08
12.04
11.82
10.69
9.97
MAG
S21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 28. MSG/MAG & |S21|2 (dB)
@ 4V, 180 mA.
8.96
8.09
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
8
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.812
0.820
0.834
0.842
0.846
0.849
0.853
0.853
0.855
0.857
0.857
0.857
0.853
0.852
0.853
0.857
0.861
0.866
0.867
0.875
0.877
0.884
0.889
0.872
0.878
0.886
0.902
0.902
0.895
0.932
-56.4
-94.6
-117.3
-132.4
-141.4
-148.7
-154.4
-159.0
-162.7
-166.0
-177.3
176.2
174.7
169.2
161.7
150.8
140.9
131.6
123.5
115.1
106.9
95.6
34.07 50.547
31.95 39.582
29.87 31.147
27.99 25.104
26.46 21.036
25.08 17.954
23.88 15.628
22.80 13.809
21.85 12.376
20.97 11.186
17.58 7.568
15.57 6.007
15.34 5.847
13.77 4.879
11.80 3.889
151.8
132.2
120.2
111.8
106.3
101.6
97.9
94.8
92.0
89.6
79.7
73.3
72.0
66.0
57.6
44.6
31.8
19.7
7.9
-38.42 0.012
-34.89 0.018
-33.15 0.022
-32.40 0.024
-32.04 0.025
-31.70 0.026
-31.70 0.026
-31.37 0.027
-31.37 0.027
-31.37 0.027
-30.75 0.029
-30.17 0.031
-29.90 0.032
-29.37 0.034
-28.64 0.037
-27.54 0.042
-26.38 0.048
-25.19 0.055
-24.29 0.061
-23.22 0.069
-22.16 0.078
-21.31 0.086
-20.63 0.093
-19.91 0.101
-19.58 0.105
-19.02 0.112
-18.79 0.115
-18.49 0.119
-18.49 0.119
-18.94 0.113
62.6
45.8
36.5
30.5
27.0
24.8
23.2
22.4
21.7
21.2
21.4
21.7
22.5
23.0
24.1
23.9
22.2
18.6
15.1
10.4
4.8
0.449
0.425
0.397
0.385
0.379
0.375
0.372
0.372
0.371
0.369
0.366
0.366
0.347
0.351
0.358
0.375
0.396
0.417
0.440
0.459
0.474
0.496
0.511
0.548
0.600
0.640
0.663
0.698
0.746
0.716
-49.1
-85.0
-108.1
-123.7
-132.5
-140.4
-146.4
-151.0
-154.9
-157.9
-168.7
-174.2
-174.8
-179.7
174.2
165.7
157.8
149.6
141.8
133.4
124.8
114.1
103.7
95.1
36.25
33.42
31.51
30.20
29.25
28.39
27.79
27.09
26.61
26.17
24.17
22.87
22.62
21.57
20.22
16.28
14.11
12.50
11.10
10.16
9.40
9.24
7.18
5.45
4.02
2.72
1.76
0.71
2.896
2.285
1.873
1.589
1.367
1.224
1.085
-3.8
-15.3
-28.2
-41.0
-51.7
-64.0
-73.7
-84.8
-91.3
-101.9
-109.6
-2.6
8.69
7.93
6.24
5.55
5.05
4.93
4.37
2.93
85.3
73.9
63.6
57.6
47.2
43.7
32.1
20.6
-0.34 0.962
-1.33 0.858
-2.48 0.752
-3.57 0.663
-4.66 0.585
-5.56 0.527
-6.99 0.447
-8.75 0.365
-10.7
-18.3
-26.2
-33.3
-42.0
-49.2
-56.7
-63.9
84.0
73.1
64.4
54.7
46.5
38.2
2.36
Typical Noise Parameters, VDS = 4V, IDS = 135 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
0.18
0.26
0.35
0.40
0.51
0.56
0.60
0.73
0.83
1.03
1.15
1.20
1.34
1.57
1.78
1.83
0.20
0.25
0.35
0.40
0.47
0.51
0.56
0.60
0.66
0.68
0.72
0.72
0.78
0.83
0.82
0.85
166.00
169.00
171.00
173.00
177.20
-174.50
-169.30
-162.90
-157.60
-145.50
-137.10
-135.20
-126.70
-117.00
-107.90
-95.70
0.014
0.018
0.021
0.021
0.022
0.022
0.023
0.030
0.040
0.085
0.140
0.160
0.300
0.630
0.880
1.460
28.57
24.42
24.32
21.25
19.35
17.66
16.37
15.09
14.82
12.76
11.55
11.31
10.55
9.81
MAG
S21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 29. MSG/MAG & |S21|2 (dB)
@ 4V, 135 mA.
8.86
8.17
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
9
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.930
0.889
0.876
0.867
0.862
0.858
0.857
0.856
0.854
0.857
0.853
0.853
0.848
0.846
0.848
0.850
0.853
0.861
0.861
0.868
0.873
0.875
0.881
0.871
0.873
0.885
0.891
0.912
0.895
0.933
-51.3
-88.3
-111.6
-127.3
-137.0
-144.7
-151.0
-156.0
-160.0
-163.5
-175.7
177.6
176.2
170.3
162.4
151.6
141.4
132.3
123.8
115.6
107.1
95.8
33.70 48.399
31.65 38.230
29.58 30.121
27.71 24.294
26.18 20.379
24.81 17.405
23.62 15.165
22.54 13.404
21.59 12.005
20.72 10.859
17.33 7.351
15.33 5.839
15.09 5.681
13.52 4.742
11.55 3.780
152.3
132.6
120.6
112.2
106.6
101.9
98.2
95.0
92.2
89.8
79.8
73.3
72.0
66.0
57.5
44.3
31.5
19.4
7.5
-37.08 0.014
-32.77 0.023
-31.37 0.027
-30.75 0.029
-30.46 0.030
-30.17 0.031
-29.90 0.032
-29.90 0.032
-29.63 0.033
-29.63 0.033
-29.12 0.035
-28.87 0.036
-28.64 0.037
-28.18 0.039
-27.74 0.041
-26.94 0.045
-25.85 0.051
-25.04 0.056
-24.01 0.063
-23.22 0.069
-22.16 0.078
-21.41 0.085
-20.63 0.093
-20.00 0.100
-19.66 0.104
-19.17 0.110
-18.79 0.115
-18.56 0.118
-18.49 0.119
-19.02 0.112
63.6
46.8
36.1
29.5
25.9
23.1
21.1
19.9
18.3
18.2
16.3
16.5
16.7
17.0
17.0
16.7
15.4
12.9
9.8
0.524
0.467
0.436
0.415
0.405
0.397
0.392
0.390
0.387
0.384
0.380
0.379
0.360
0.363
0.369
0.385
0.405
0.426
0.447
0.467
0.481
0.501
0.515
0.553
0.604
0.644
0.666
0.700
0.748
0.718
-45.7
-80.7
-103.2
-119.1
-128.4
-136.8
-143.2
-148.2
-152.3
-155.6
-167.2
-173.2
-173.8
-179.0
174.6
165.7
157.5
149.2
141.3
132.8
124.1
113.3
102.9
94.5
35.39
32.21
30.48
29.23
28.32
27.49
26.76
26.22
25.61
25.17
23.22
22.10
21.86
20.85
19.65
16.29
13.90
12.31
10.85
9.85
8.98
6.93
5.22
3.78
2.50
1.51
0.50
2.813
2.220
1.824
1.546
1.334
1.190
1.059
-4.3
5.5
0.4
-6.6
-15.9
-28.8
-41.2
-52.5
-63.9
-74.0
-85.2
-93.5
-102.3
-110.5
9.15
8.19
7.40
6.12
5.28
4.89
4.38
5.43
85.6
74.2
63.7
57.0
47.0
43.7
32.2
21.2
-0.57 0.937
-1.56 0.836
-2.65 0.737
-3.80 0.646
-4.72 0.581
-5.76 0.515
-7.15 0.439
-8.66 0.369
-13.8
-21.4
-28.8
-36.3
-43.7
-51.7
-58.5
-65.8
83.4
72.5
63.7
54.2
46.0
37.8
2.90
2.74
Typical Noise Parameters, VDS = 4V, IDS = 75 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
0.15
0.20
0.22
0.30
0.36
0.44
0.50
0.55
0.63
0.80
0.90
0.91
1.14
1.24
1.49
1.61
0.10
0.15
0.20
0.30
0.35
0.43
0.47
0.58
0.60
0.67
0.72
0.72
0.71
0.74
0.74
0.76
130.00
135.00
143.00
148.00
154.10
168.70
179.30
-170.80
-164.80
-150.90
-140.80
-139.50
-129.10
-119.90
-109.70
-97.30
0.016
0.019
0.019
0.022
0.024
0.022
0.022
0.019
0.024
0.050
0.095
0.100
0.180
0.285
0.460
0.720
27.97
23.50
23.02
20.07
17.85
16.35
15.29
14.11
14.01
11.92
11.00
10.56
9.80
MAG
S21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 30. MSG/MAG & |S21|2 (dB)
@ 4V, 75 mA.
9.31
8.41
7.73
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
10
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.805
0.815
0.831
0.839
0.844
0.846
0.850
0.852
0.855
0.854
0.855
0.857
0.851
0.851
0.852
0.857
0.859
0.870
0.867
0.877
0.881
0.885
0.892
0.875
0.883
0.886
0.913
0.908
0.891
0.928
-56.0
-94.0
-116.9
-131.7
-140.9
-148.3
-154.0
-158.7
-162.5
-165.6
-177.1
176.3
174.9
169.4
161.8
151.1
141.0
131.8
123.6
115.6
106.7
95.6
34.11 50.734
32.03 39.967
29.97 31.517
28.10 25.418
26.58 21.322
25.20 18.207
24.00 15.852
22.93 14.014
21.98 12.559
21.10 11.351
17.71 7.681
15.71 6.099
15.46 5.931
13.89 4.946
11.92 3.943
152.1
132.6
120.5
112.1
106.4
101.8
98.0
94.8
92.0
89.6
79.5
73.0
71.7
65.6
57.1
43.9
30.9
18.5
6.5
-39.17 0.011
-34.89 0.018
-33.56 0.021
-32.77 0.023
-32.40 0.024
-32.04 0.025
-31.70 0.026
-31.70 0.026
-31.70 0.026
-31.37 0.027
-31.06 0.028
-30.46 0.030
-30.17 0.031
-29.63 0.033
-29.12 0.035
-27.74 0.041
-26.56 0.047
-25.51 0.053
-24.44 0.060
-23.48 0.067
-22.38 0.076
-21.41 0.085
-20.72 0.092
-20.00 0.100
-19.66 0.104
-19.09 0.111
-18.71 0.116
-18.56 0.118
-18.49 0.119
-18.86 0.114
62.6
46.6
36.3
30.7
27.2
24.9
23.3
22.3
21.6
20.9
21.1
22.3
22.3
23.3
24.3
24.4
22.8
19.7
16.3
11.8
6.1
0.468
0.419
0.387
0.364
0.354
0.346
0.342
0.339
0.337
0.335
0.331
0.331
0.336
0.315
0.323
0.343
0.367
0.391
0.417
0.440
0.458
0.482
0.500
0.540
0.593
0.636
0.660
0.699
0.747
0.717
-45.2
-79.7
-102.0
-117.9
-127.0
-135.4
-141.6
-146.5
-150.5
-153.9
-165.0
-170.4
-170.9
-175.8
178.2
169.9
162.1
154.0
146.2
137.7
129.1
118.1
107.5
98.6
36.64
33.46
31.76
30.43
29.49
28.62
27.85
27.32
26.84
26.24
24.38
23.08
22.82
21.76
19.82
16.43
14.19
12.82
11.24
10.41
9.75
9.35
7.30
5.57
4.11
2.80
1.82
0.75
2.935
2.318
1.899
1.605
1.381
1.233
1.090
-5.2
-17.0
-30.1
-42.9
-54.3
-65.9
-76.4
-86.8
-94.4
-105.1
-112.1
-1.3
-9.1
8.94
8.31
6.52
5.87
5.23
6.01
4.78
2.98
85.2
74.2
63.8
57.9
47.4
43.1
32.2
20.6
-0.30 0.966
-1.33 0.858
-2.49 0.751
-3.58 0.662
-4.78 0.577
-5.81 0.512
-6.99 0.447
-8.64 0.370
-17.0
-24.8
-31.8
-40.3
-47.8
-54.9
-62.6
87.1
75.8
66.8
57.0
48.4
39.9
2.41
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
0.45
0.48
0.50
0.55
0.65
0.70
0.77
0.84
0.90
1.06
1.20
1.19
1.40
1.52
1.75
1.88
0.20
0.32
0.35
0.40
0.46
0.49
0.55
0.58
0.62
0.66
0.69
0.69
0.77
0.81
0.82
0.85
154.00
160.00
166.00
170.00
177.40
-175.10
-168.90
-162.60
-158.20
-145.80
-137.30
-135.40
-126.50
-117.90
-107.50
-95.60
0.037
0.032
0.030
0.030
0.030
0.032
0.031
0.037
0.043
0.085
0.140
0.150
0.320
0.550
0.890
1.530
28.85
25.13
24.43
21.26
19.38
17.90
16.33
15.23
14.60
12.66
11.60
11.38
10.55
9.84
MAG
S21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 31. MSG/MAG & |S21|2 (dB)
@ 5V, 135 mA.
9.05
8.29
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
11
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag. Ang.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
1.9
2
2.4
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.823
0.826
0.842
0.846
0.851
0.850
0.855
0.856
0.859
0.857
0.857
0.858
0.855
0.855
0.854
0.858
0.860
0.868
0.866
0.877
0.876
0.880
0.883
0.874
0.878
0.884
0.906
0.907
0.893
0.925
-57.1
-95.6
-118.2
-133.1
-142.0
-149.2
-154.9
-159.5
-163.2
-166.3
-177.7
175.8
174.4
168.8
161.4
150.7
140.4
131.4
123.2
114.8
106.3
95.1
33.96 49.888
31.82 38.989
29.66 30.415
27.75 24.416
26.21 20.452
24.83 17.443
23.62 15.178
22.55 13.405
21.59 12.012
20.71 10.853
17.32 7.342
15.31 5.828
15.08 5.676
13.51 4.738
11.54 3.774
151.3
131.6
119.6
111.4
105.9
101.4
97.7
94.7
92.0
89.6
79.9
73.6
72.3
66.4
58.2
45.3
32.8
21.0
9.4
-37.72 0.013
-33.98 0.020
-32.77 0.023
-32.04 0.025
-31.70 0.026
-31.37 0.027
-31.37 0.027
-31.06 0.028
-31.06 0.028
-30.75 0.029
-30.46 0.030
-29.90 0.032
-29.37 0.034
-29.12 0.035
-28.40 0.038
-27.13 0.044
-26.02 0.050
-24.88 0.057
-23.88 0.064
-22.85 0.072
-21.83 0.081
-21.11 0.088
-20.35 0.096
-19.83 0.102
-19.41 0.107
-18.94 0.113
-18.71 0.116
-18.49 0.119
-18.42 0.120
-18.86 0.114
62.6
45.7
36.0
30.1
26.8
24.4
22.9
22.1
21.4
21.1
21.0
21.6
22.1
22.6
22.8
22.7
20.7
17.2
13.4
8.5
0.427
0.418
0.421
0.420
0.419
0.419
0.419
0.420
0.421
0.419
0.418
0.418
0.410
0.403
0.409
0.423
0.440
0.457
0.475
0.490
0.502
0.519
0.530
0.566
0.613
0.652
0.670
0.704
0.747
0.717
-55.1
-92.8
-115.9
-130.7
-139.0
-146.4
-151.9
-156.1
-159.7
-162.6
-172.9
-178.2
-179.1
176.0
169.8
161.0
152.8
144.4
136.6
128.0
119.3
108.7
98.4
35.84
32.90
31.21
29.90
28.96
28.10
27.50
26.80
26.32
25.73
23.89
22.60
22.23
21.32
19.97
16.15
13.82
12.31
10.81
10.00
9.09
8.98
6.92
5.21
3.79
2.52
1.57
0.56
2.812
2.219
1.821
1.547
1.337
1.198
1.066
-2.0
-13.7
-26.0
-38.2
-49.6
-61.1
-71.0
-80.8
-88.0
-99.8
-107.2
2.6
-5.0
8.20
7.31
6.06
5.32
4.87
4.76
4.29
2.90
84.7
73.6
62.9
56.9
46.7
42.9
32.2
20.7
-0.46 0.948
-1.51 0.840
-2.56 0.745
-3.54 0.665
-4.70 0.582
-5.61 0.524
-6.80 0.457
-8.38 0.381
-12.9
-20.7
-28.5
-35.9
-43.9
-51.4
-58.7
-66.3
90.7
79.7
69.3
60.8
51.6
43.7
35.8
2.20
Typical Noise Parameters, VDS = 3V, IDS = 135 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
MSG
0.5
0.9
1
1.5
2
2.4
3
3.5
3.9
5
5.8
6
7
8
9
0.25
0.30
0.30
0.36
0.45
0.52
0.66
0.70
0.87
1.02
1.13
1.24
1.34
1.58
1.78
1.88
0.20
0.25
0.35
0.40
0.46
0.52
0.56
0.62
0.65
0.67
0.71
0.73
0.82
0.83
0.81
0.83
166.00
169.00
171.00
173.00
176.80
-174.70
-169.80
-162.80
-157.90
-145.70
-136.80
-135.10
-126.20
-116.90
-107.50
-95.40
0.020
0.022
0.018
0.019
0.020
0.021
0.025
0.028
0.042
0.082
0.140
0.175
0.380
0.645
0.870
1.350
28.47
24.36
24.24
21.17
19.30
18.08
16.26
15.33
14.62
12.52
11.53
11.40
10.57
9.67
MAG
S21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 32. MSG/MAG & |S21|2 (dB)
@ 3V, 135 mA.
8.59
7.76
10
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
12
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
Ordering Information
Part Number
No. of Devices
Container
ATF-531P8-TR1
ATF-531P8-TR2
ATF-531P8-BLK
3000
10000
100
7” Reel
13”Reel
antistatic bag
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
D1
D
pin1
P
pin1
8
7
1
2
E
e
E1
3PX
6
5
R
3
4
b
L
Top View
Bottom View
A1
A
A
A2
End View
Side View
DIMENSIONS
SYMBOL
MIN.
0.70
0
NOM.
0.75
MAX.
0.80
A
A1
A2
b
0.02
0.05
0.203 REF
0.25
0.225
1.9
0.275
2.1
D
2.0
D1
E
0.65
1.9
0.80
0.95
2.1
2.0
E1
e
1.45
1.6
1.75
0.50 BSC
0.25
P
0.20
0.35
0.30
0.45
L
0.40
DIMENSIONS ARE IN MILLIMETERS
13
PCB Land Pattern and Stencil Design
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
PIN 1
PIN 1
0.50 (19.68)
0.50 (19.68)
φ0.20 (7.87)
1.54 (60.61)
1.60 (62.99)
0.28 (10.83)
+
Solder
mask
0.25 (9.74)
0.63 (24.80)
0.60 (23.62)
RF
transmission
line
0.72 (28.35)
0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
Stencil Layout (top view)
PCB Land Pattern (top view)
Device Orientation
4 mm
REEL
8 mm
3PX
3PX
3PX
3PX
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
14
Tape Dimensions
P0
P2
P
D
E
F
W
+
+
D1
Tt
t1
K0
10° Max
10° Max
A0
B0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (inches)
CAVITY
LENGTH
WIDTH
A
0
2.30 0.05
2.30 0.05
1.00 0.05
4.00 0.10
1.00 + 0.25
0.091 0.004
0.091 0.004
0.039 0.002
0.157 0.004
0.039 + 0.002
B
0
DEPTH
K
0
P
PITCH
BOTTOM HOLE DIAMETER
D
1
PERFORATION
CARRIER TAPE
DIAMETER
PITCH
D
1.50 0.10
4.00 0.10
1.75 0.10
0.060 0.004
0.157 0.004
0.069 0.004
P
0
POSITION
E
WIDTH
W
8.00 + 0.30
8.00 – 0.10
0.254 0.02
0.315 0.012
0.315 0.004
0.010 0.0008
THICKNESS
t
1
COVER TAPE
DISTANCE
WIDTH
C
5.4 0.10
0.205 0.004
TAPE THICKNESS
T
t
0.062 0.001
0.0025 0.0004
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
2.00 0.05
0.138 0.002
0.079 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
15
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788 6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
India, Australia, New Zealand: (+65) 6271 2394
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5988-8407EN (12/02)
July 31, 2003
5988-9990EN
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