AT-41486-TR1G [AVAGO]
Up to 6 GHz Low Noise Silicon Bipolar Transistor;
| 型号： | AT-41486-TR1G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor 放大器 晶体管 |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT-41486
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Description
Features
Low Noise Figure:
Avago’s AT-41486 is a general purpose NPN bipolar tran-
sistor that offers excellent high frequency performance.
The AT-41486 is housed in a low cost surface mount
.085" diameter plastic package. The 4 micron emitter-to-
emitter pitch enables this transistor to be used in many
different functions. The 14 emitter finger interdigitated
geometry yields an intermediate sized transistor with
impedances that are easy to match for low noise and
moderate power applications. Applications include use
in wireless systems as an LNA, gain stage, buffer, oscil-
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical f
Surface Mount Plastic Package
T
Tape-and-Reel Packaging Option Available
lator, and mixer. An optimum noise match near 50Ω at Lead-free Option Available
900 MHz, makes this device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is fabricated using
86 Plastic Package
Avago’s 10 GHz f Self-Aligned-Transistor (SAT) process.
T
The die is nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
this device.
Pin Connections
EMITTER
4
BASE
COLLECTOR
1
3
2
EMITTER
AT-41486 Absolute Maximum Ratings
[2,4]
Thermal Resistance
= 165°C/W
jc
:
Absolute
Maximum
[1]
Symbol
Parameter
Units
V
V
V
V
V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
1.5
20
12
60
500
150
EBO
Notes:
CBO
1. Permanent damage may occur if any of
these limits are exceeded.
V
CEO
I
mA
mW
°C
C
2. TCASE = 25°C.
[2,3]
P
Power Dissipation
T
3. Derate at 6 mW/°C for TC > 68°C.
T
Junction Temperature
Storage Temperature
j
4. See MEASUREMENTS section “Thermal Re-
sistance”for more information.
T
°C
-65 to 150
STG
Ordering Information
Part Numbers
AT-41486-BLK
No. of Devices
100
Comments
Bulk
AT-41486-BLKG
AT-41486-TR1
100
Bulk
1000
7" Reel
7" Reel
13" Reel
13" Reel
AT-41486-TR1G
AT-41486-TR2
1000
4000
AT-41486-TR2G
4000
Note: Order part number with a “G”suffix if lead-free option is desired.
Electrical Specifications, T = 25°C
A
Symbol
Parameters and Test Conditions
Insertion Power Gain; V = 8 V, I = 25 mA
Units
Min.
Typ.
Max.
2
|S
|
f = 1.0 GHz
f = 2.0 GHz
dB
17.5
11.5
21E
CE
C
P
1 dB
Power Output @ 1 dB Gain Compression
V = 8 V, I = 25 mA
f = 2.0 GHz
dBm
18.0
CE
C
G
1 dB Compressed Gain; V = 8 V, I = 25 mA
f = 2.0 GHz
dB
dB
13.5
1 dB
CE
C
NF
Optimum Noise Figure: V = 8 V, I = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
1.4
1.7
3.0
1.8
O
CE
C
G
Gain @ NF ; V = 8 V, I = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
17.0
30
18.0
13.0
9.0
A
O
CE
C
f
Gain Bandwidth Product: V = 8 V, I = 25 mA
GHz
—
μA
8.0
T
CE
C
h
Forward Current Transfer Ratio; V = 8 V, I = 10 mA
150
270
0.2
1.0
FE
CE
C
I
I
Collector Cutoff Current; V = 8 V
CB
CBO
EBO
Emitter Cutoff Current; V = 1 V
μA
EB
[1]
C
CB
Collector Base Capacitance : V = 8 V, f = 1 MHz
pF
0.25
CB
Note:
1. For this test, the emitter is grounded.
2
AT-41486 Typical Performance, T = 25°C
A
16
14
12
10
8
24
15
14
13
12
11
21
2.0 GHz
4.0 GHz
G
A
10 V
6 V
18
15
12
9
G
G
A
A
4 V
8
6
4
2
0
6
4
2
0
4
3
2
1
4.0 GHz
2.0 GHz
4 V
6 V
10 V
6
NF
50
NF
O
3
NF
NF
O
O
0
0.5
1.0
2.0
3.0 4.0 5.0
0
10
20
I
30
(mA)
40
0
10
20
I
30
(mA)
40
FREQUENCY (GHz)
C
C
Figure 3. Optimum Noise Figure and Associated
Gain vs. Collector Current and Frequency.
VCE = 8 V.
Figure 1. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
Figure 2. Optimum Noise Figure and Associated
Gain vs. Collector Current and Collector Voltage.
f = 2.0 GHz.
24
20
40
35
30
20
1.0 GHz
16
P
1dB
MSG
25
16
12
8
12
2.0 GHz
G
20
1dB
MAG
8
15
2
|S
|
21E
10
5
4.0 GHz
4
0
4
0
0
10
20
30
(mA)
40
0.1
0.3 0.5 1.0
FREQUENCY (GHz)
3.0 6.0
0
10
20
30
I (mA)
C
40
I
C
Figure 4. Output Power and 1 dB Compressed
Gain vs. Collector Current and Frequency.
Figure 5. Insertion Power Gain, Maximum
Available Gain and Maximum Stable Gain vs.
Frequency.
Figure 6. Insertion Power Gain vs. Collector
Current and Frequency. VCE = 8 V.
V
CE = 8 V, f = 2.0 GHz.
V
CE = 8 V, IC = 25 mA.
3
AT-41486 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, T = 25°C, V = 8 V, I = 10 mA
O
A
CE
C
Freq.
GHz
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
S
S
S
22
11
21
12
Mag.
.74
.59
.56
.57
.62
.63
.64
.68
.71
.74
.77
.79
.81
Ang.
-38
-127
-168
169
152
142
130
122
113
105
99
dB
28.1
22.0
16.8
13.5
11.1
9.3
7.6
6.3
5.1
4.0
Mag.
25.46
12.63
6.92
4.72
3.61
2.91
2.41
2.06
1.80
1.59
1.42
1.27
1.13
Ang.
dB
Mag.
.011
.031
.041
.049
.058
.068
.078
.093
.106
.125
.139
.153
.170
Ang.
68
47
46
49
43
52
52
51
48
48
43
38
34
Mag.
.94
.60
.49
.45
.42
.40
.39
.37
.35
.35
.35
.35
.35
Ang.
-12
-29
-29
-32
-39
-42
-50
-60
-70
-84
-98
-114
-131
157
107
84
69
56
47
37
26
16
7
-39.6
-30.2
-27.7
-26.2
-24.8
-23.4
-22.2
-20.6
-19.5
-18.0
-17.2
-16.3
-15.4
3.1
2.0
1.1
-4
-13
-22
93
87
AT-41486 Typical Scattering Parameters, Common Emitter, Z = 50 Ω, T = 25°C, V = 8 V, I = 25 mA
O
A
CE
C
Freq.
GHz
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
S
S
S
22
11
21
12
Mag.
.50
.55
.57
.57
.59
.61
.65
.70
.74
.78
.78
.78
.76
Ang.
-75
-158
177
161
148
139
128
121
113
107
102
96
dB
32.0
23.2
17.5
14.1
11.5
9.6
8.0
6.7
5.7
4.7
Mag.
40.01
14.38
7.50
5.07
3.75
3.02
2.52
2.17
1.92
1.72
1.53
1.36
1.21
Ang.
dB
Mag.
.009
.020
.032
.043
.058
.072
.083
.099
.115
.132
.149
.169
.188
Ang.
54
48
61
62
59
58
57
56
52
47
42
36
31
Mag.
.85
.51
.46
.44
.43
.40
.38
.36
.34
.32
.31
.31
.33
Ang.
-17
-24
-24
-28
-35
-41
-49
-59
-72
-87
-106
-125
-144
142
97
78
65
53
45
34
24
14
3
-41.3
-34.1
-29.9
-27.3
-24.8
-22.9
-21.6
-20.1
-18.8
-17.6
-16.6
-15.4
-14.5
3.7
2.7
1.6
-8
-19
-29
91
A model for this device is available in the DEVICE MODELS section.
AT-41486 Noise Parameters: V = 8 V, I = 10 mA
CE
C
opt
Freq.
GHz
NF
O
R /50
N
dB
1.3
1.3
1.4
1.7
3.0
Mag
.12
.10
.04
.12
.44
Ang
3
16
43
-145
-99
0.1
0.5
1.0
2.0
4.0
0.17
0.17
0.16
0.16
0.40
4
86 Plastic Package Dimensions
0.51 0.13
(0.020 0.005)
4
45°
C
L
3
1
2.34 0.38
(0.092 0.015)
2
2.67 0.38
(0.105 0.15)
1.52 0.25
(0.060 0.010)
0.203 0.051
(0.006 0.002)
5° TYP.
8° MAX
0° MIN
0.66 0.013
(0.026 0.005)
2.16 0.13
(0.085 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-2648EN
AV02-3624EN - June 14, 2012
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