SQ6601PT [AUK]

Off-Line Quasi-Resonance Flyback Switching Regulator; 离线准谐振反激式开关稳压器
SQ6601PT
型号: SQ6601PT
厂家: AUK CORP    AUK CORP
描述:

Off-Line Quasi-Resonance Flyback Switching Regulator
离线准谐振反激式开关稳压器

稳压器 开关
文件: 总8页 (文件大小:422K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SQ6601PT  
Semiconductor  
Off-Line Quasi-Resonance Flyback Switching Regulator  
Description  
The SQ6601PT is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back  
Quasi-Resonant (including low frequency PRC)fly-back converter type SMPS (Switching Mode Power Supply)  
applications. this IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system  
reducing external components count and simplifying the circuit designs. the device is provided in a five pin over-  
molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics.  
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).  
Features  
Quasi-Resonant Operation  
Low-loss, Pulse-Ration-Control standby mode  
Under-voltage lockout with Hysteresis  
Adjustable switching speed for EMI control  
Low start-up circuit current (100uA max)  
Active low-pass filter for stabilizing the operation in case of light load  
Avalanche Energy Guaranteed MOSFET with high VDSS  
Built-in constant voltage drive circuit  
Built-in step drive circuit  
Built-in low frequency PRC mode (20kHz)  
Pulse-by-pulse Overcurrent Protection (OCP)  
Overvoltage Protection with latch mode (OVP)  
Thermal Shutdown with latch mode (TSD)  
Over-molded Five-Pin Package  
Ordering Information  
Type NO.  
Marking  
Package Code  
SQ6601PT  
SQ6601PT  
TO-220F-5FL  
Package Outline  
TO-220 Fullpack (5 Lead)  
KSD-I0U001-000  
1
SQ6601PT  
Internal Block Diagram  
Pin Function  
Pin Number  
Pin Name  
Pin Function  
1
2
3
4
5
Drain  
Source  
GND  
Power Switch MOSFET Drain Part  
Power Switch MOSFET Source Part  
Ground of the Control Section  
Vcc  
Supply Voltage of Output Drive & Control Section  
FB/OCP  
Voltage Mode Control Feedback Signal & Over Current Detection  
Typical Connection Diagram  
SQ6601PT  
KSD-I0U001-000  
2
SQ6601PT  
Absolute maximum ratings  
(Ta=25°C, Unless otherwise specified)  
Characteristic  
Drain Source Voltage  
Symbol Ratings  
Unit  
V
Note  
VDS  
ID  
650  
7
-
Drain Current  
A
TC = 25  
Peak Drain Current  
IDP  
28  
A
Single Pulse  
Single Pulsed Avalanche Energy  
Control Supply Voltage  
FB/OCP Voltage Range  
Power Dissipation  
EAS  
640  
mJ  
V
L=23mH,VDD=100V, IDP=7.0A  
VCC  
FB/OCP  
PD  
20  
-
-0.3 ~ +6  
40  
V
-
W
With infinite heatsink  
Thermal Resistance, Junction to Case  
Junction Temperature  
RthJC  
TJ  
3.12  
°C /W  
°C  
-
-
-
-
150  
Operating Temperature Range  
Storage Temperature Range  
Topr  
Tstg  
-25 ~ +125  
-55 ~ +150  
°C  
°C  
Recommended Operating Conditions  
Time for input of quasi resonant signals.  
For the Quasi resonant signal inputted to the VFB/OCP terminal at the time of quasi resonant operation, the signal  
should be wider than Tth(2)  
KSD-I0U001-000  
3
SQ6601PT  
Electrical Characteristics  
(VCC = 11V, Ta = 25°C ; Unless otherwise specified)  
Characteristic  
Start Threshold Voltage  
Stop Threshold Voltage  
Start up Supply Current  
Operating Supply Current  
Symbol  
VTH(ST)  
VTH(SP)  
IST  
Test Conditions  
Min.  
Typ. Max. Units  
VCC Increasing  
8.5  
9.5  
8
-
10.5  
8.8  
100  
7
V
V
V
CC decreasing after turn on  
7.2  
start threshold voltage  
VCC = VTH(ST) - 0.1V  
-
V
ICC  
VFB = 1V  
-
3
4
-
Dynamic Operating Supply  
Current  
IDCC  
-
-
30  
-
10  
Maximum Off Time  
tMAX  
Drain waveform high  
Drain waveform high  
Drain waveform high  
60  
Minimum Off Time  
tMIN  
-
1.5  
1.0  
18.7  
Minimum Input Pulse Width  
Over Voltage Threshold  
tMIN(W)  
VOVP  
-
-
V
CC Increasing until shut down  
15.3  
17  
output  
V
CC decreasing until latch  
Latch Release Voltage  
Latch Holding Current  
VRE  
ICC(RE)  
VFB  
2.5  
-
-
6.0  
400  
0.78  
1.6  
V
V
releasing  
-
-
Feedback Threshold Voltage  
Css Snchronized Voltage  
Feedback Sink Current  
-
0.68  
1.3  
1.2  
0.73  
1.45  
1.35  
VSYNC  
ISINK  
-
V
VFB = 1V  
1.5  
Thermal Shutdown Activation  
Temperature  
Drain-to-Source Breakdown  
Voltage  
TJ(TSD)  
VDS  
-
140  
-
-
-
-
-
-
V
ID = 300uA  
650  
-
Drain Leakage Current  
On-State Resistance  
Rise Time  
IDS  
VDS = 650V  
-
-
-
300  
1.2  
250  
RDS(ON) ID = 3.5A  
tr 10% to 90%  
ns  
KSD-I0U001-000  
4
SQ6601PT  
Electrical Characteristic Curves  
Fig. 2 VTH(SP) vs. Ta  
Fig. 4 VFB vs. Ta  
Fig. 6 VOH vs. Ta  
Fig. 1 ICC vs. Ta  
Fig. 3 IST vs. Ta  
Fig. 5 VTH(ST) vs. Ta  
KSD-I0U001-000  
5
SQ6601PT  
Electrical Characteristic Curves  
Fig. 7 VOL vs Ta  
Fig. 8 ICC vs Vth  
Fig. 8 Safe Operating Area  
Fig. 9 PD vs Tc  
Fig. 10 Thermal Response  
KSD-I0U001-000  
6
SQ6601PT  
Outline Dimensions  
unit : mm  
2.70~2.90  
9.90~10.10  
1.10 Max.  
0.60 Max.  
0.90 Max.  
5.08 Typ.  
0.80 Max.  
1.70 Typ.  
1
2
3
4
5
KSD-I0U001-000  
7
SQ6601PT  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
KSD-I0U001-000  
8

相关型号:

SQ7002K

Automotive N-Channel 60 V (D-S) 175 MOSFET
VISHAY

SQ701

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
POLYFET

SQ721

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
POLYFET

SQ741

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
POLYFET

SQ7414AEN

Power Field-Effect Transistor,
VISHAY

SQ7414AEN-T1-GE3

Automotive P-Channel 60 V (D-S) 175 °C MOSFET
VISHAY

SQ7414AEN-T1_GE3

Power Field-Effect Transistor,
VISHAY

SQ7414AENW

Automotive P-Channel 60 V (D-S) 175 °C MOSFET
VISHAY
VISHAY

SQ7414AENW-T1_GE3

Power Field-Effect Transistor,
VISHAY

SQ7414AEN_15

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
VISHAY

SQ7414EN

N-Channel 60-V (D-S) MOSFET
VISHAY