SQ7414AENW-T1_GE3 [VISHAY]
Power Field-Effect Transistor,;
| 型号： | SQ7414AENW-T1_GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ7414AENW
Vishay Siliconix
www.vishay.com
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8
package with 1.07 mm profile
PRODUCT SUMMARY
VDS (V)
60
R
DS(on) (Ω) at VGS = 10 V
DS(on) (Ω) at VGS = 4.5 V
0.023
0.028
18
R
• PWM optimized
ID (A)
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Wettable flank terminals
Configuration
Single
PowerPAK® 1212-8W Single
D
8
D
7
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
6
D
5
D
1
S
2
S
3
G
G
1
Top View
Bottom View
N-Channel MOSFET
S
Marking Code: Q020
ORDERING INFORMATION
Package
PowerPAK 1212-8W
Lead (Pb)-free and Halogen-free
SQ7414AENW-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
20
TC = 25 °C
18
Continuous Drain Current a
ID
T
C = 125 °C
18
a
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
IS
18
A
IDM
IAS
EAS
72
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
20
L = 0.1 mH
16
62
mJ
W
TC = 25 °C
Maximum Power Dissipation b
PD
TC = 125 °C
20
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
81
UNIT
Junction-to-Ambient
PCB Mount c
°C/W
Junction-to-Case (Drain)
RthJC
2.4
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0940-Rev. B, 04-May-15
Document Number: 62980
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7414AENW
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
60
1.5
-
-
-
V
2
2.5
VDS = 0 V, VGS
VGS = 0 V
=
20 V
-
100
1
nA
μA
A
VDS = 60 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
V
GS = 0 V
GS = 0 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS ≥ 5 V
-
-
50
V
-
-
150
-
ID(on)
VGS = 10 V
20
-
-
0.016
-
V
V
V
GS = 10 V
GS = 10 V
GS = 10 V
ID = 8.7 A
0.023
0.039
0.050
0.028
-
ID = 8.7 A, TJ = 125 °C
ID = 8.7 A, TJ = 175 °C
ID = 8.7 A
-
a
Drain-Source On-State Resistance
RDS(on)
Ω
-
-
V
GS = 4.5 V
-
0.019
50
b
Forward Transconductance
gfs
VDS = 15 V, ID = 8.7 A
-
S
b
Dynamic
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
1275
112
42
1590
140
52
25
-
Output Capacitance
V
GS = 0 V
VDS = 30 V, f = 1 MHz
pF
Reverse Transfer Capacitance
-
c
Total Gate Charge
-
19
c
Gate-Source Charge
Qgs
Qgd
Rg
V
GS = 10 V
VDS = 30 V, ID = 8.7 A
f = 1 MHz
-
2.6
3.6
1.12
8
nC
c
Gate-Drain Charge
-
-
Gate Resistance
0.6
-
1.6
10
16
26
18
Ω
c
Turn-On Delay Time
td(on)
tr
c
Rise Time
-
13
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
ns
c
Turn-Off Delay Time
td(off)
-
22
c
Fall Time
tf
-
15
b
Source-Drain Diode Ratings and Characteristics
Pulsed Current a
ISM
-
-
-
72
A
V
Forward Voltage
VSD
IF = 8.7 A, VGS = 0 V
0.8
1.2
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0940-Rev. B, 04-May-15
Document Number: 62980
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7414AENW
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 10 V thru 4 V
24
18
12
6
24
18
12
6
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = -55 °C
0
0
0
1
2
3
4
5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
4
3
2
1
0
100
80
60
40
20
0
TC = -55 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = -55 °C
0
3
6
9
12
15
0
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
1800
1600
1400
1200
1000
800
600
400
200
0
0.05
0.04
0.03
0.02
0.01
0.00
Ciss
VGS = 4.5 V
VGS = 10 V
Crss
Coss
30
0
6
12
18
24
30
0
15
45
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-0940-Rev. B, 04-May-15
Capacitance
Document Number: 62980
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7414AENW
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.5
ID = 8.7 A
8
2.1
ID = 8.7 A
6
VDs = 30 V
1.7
1.3
0.9
0.5
VGS = 10 V
4
2
0
VGS = 4.5 V
-50 -25
0
25
50
75 100 125 150 175
0
5
10
15
20
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.10
100
10
TJ = 150 °C
0.08
0.06
0.04
0.02
0.00
1
TJ = 25 °C
TJ = 150 °C
0.1
0.01
0.001
TJ = 25 °C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
80
76
72
68
64
60
ID = 1 mA
ID = 5 mA
- 0.1
- 0.4
- 0.7
- 1.0
ID = 250 μA
- 50
- 25
0
25
50
75
100
125
150
175
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
S15-0940-Rev. B, 04-May-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 62980
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7414AENW
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
100 μs
1 ms
IDM Limited
10
ID Limited
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
Limited by RDS(on)
*
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-0940-Rev. B, 04-May-15
Document Number: 62980
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7414AENW
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62980.
S15-0940-Rev. B, 04-May-15
Document Number: 62980
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8 and PowerPAK 1212-8W
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages:
DATASHEET PART NUMBER
SQ7414AEN
SQ7414AENW
SQ7415AEN
SQ7415AENW
SQS401EN
OLD ORDERING CODE a
SQ7414AEN-T1-GE3
-
NEW ORDERING CODE
SQ7414AEN-T1_GE3
SQ7414AENW-T1_GE3
SQ7415AEN-T1_GE3
SQ7415AENW-T1_GE3
SQS401EN-T1_GE3
SQS401ENW-T1_GE3
SQS405EN-T1_GE3
SQS405ENW-T1_GE3
SQS420EN-T1_GE3
SQS423EN-T1_GE3
SQS460EN-T1_GE3
SQS462EN-T1_GE3
SQS482EN-T1_GE3
SQS484EN-T1_GE3
SQS490EN-T1_GE3
SQS840EN-T1_GE3
SQS850EN-T1_GE3
SQ7415AEN-T1-GE3
-
SQS401EN-T1-GE3
-
SQS401ENW
SQS405EN
SQS405EN-T1-GE3
-
SQS405ENW
SQS420EN
SQS420EN-T1-GE3
SQS423EN-T1-GE3
SQS460EN-T1-GE3
SQS462EN-T1-GE3
SQS482EN-T1-GE3
SQS484EN-T1-GE3
SQS490EN-T1-GE3
SQS840EN-T1-GE3
SQS850EN-T1-GE3
SQS423EN
SQS460EN
SQS462EN
SQS482EN
SQS484EN
SQS490EN
SQS840EN
SQS850EN
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 25-Aug-15
Document Number: 66697
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8W Case Outline
L
E2
E4
K
H
A2
W
8
7
1
2
3
4
1
2
3
4
Z
2
6
5
L1
E3
Backside view of single pad
θ
θ
A1
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold flash and
cutting burrs
2
E1
E
Detail Z
MILLIMETERS
NOM.
1.04
INCHES
DIM.
MIN.
0.97
0
MAX.
MIN.
0.038
0
NOM.
0.041
MAX.
0.044
0.002
0.005
0.016
0.013
0.134
0.124
0.088
A
A1
A2
b
1.12
0.05
0.13
0.41
0.33
3.40
3.15
2.24
-
-
0
-
0
-
0.23
0.23
3.20
2.95
1.98
0.30
0.009
0.009
0.126
0.116
0.078
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D4
D5
E
3.05
0.120
2.11
0.083
0.47 typ.
2.3 typ.
3.30
0.0185 typ.
0.090 typ.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 typ.
0.65 BSC.
0.86 typ.
0.41
0.013 typ.
0.026 BSC
0.034 typ.
0.016
K
H
0.30
0.30
0.06
0°
0.51
0.56
0.20
12°
0.012
0.012
0.002
0°
0.020
0.022
0.008
12°
L
0.43
0.017
L1
θ
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C14-1253-Rev. A, 21-Jan-15
DWG: 6032
Revision: 21-Jan-15
Document Number: 64614
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SQ7414EN-T1
TRANSISTOR 5.6 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212, POWERPAK-8, FET General Purpose Power
VISHAY
©2020 ICPDF网 联系我们和版权申明