SQ7002K [VISHAY]
Automotive N-Channel 60 V (D-S) 175 MOSFET; 汽车N沟道60 V （D -S ） 175 MOSFET
| 型号： | SQ7002K |
| 厂家： | 
VISHAY |
| 描述： | Automotive N-Channel 60 V (D-S) 175 MOSFET |
| 文件： | 总7页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ7002K
Vishay Siliconix
Automotive
N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• ESD Protection 2000 V
60
1.30
1.90
0.32
Single
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
• Compliant to RoHS Directive 2002/95/EC
D
TO-236
SOT-23
G
S
1
2
3
D
G
Top View
S
SQ7002K (8K)*
* Marking Code 8K
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ7002K-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
0.32
TC = 25 °C
Continuous Drain Currenta
ID
TC = 125 °C
0.24
A
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
0.32
IDM
0.8
TC = 25 °C
0.5
Maximum Power Dissipationb
PD
W
TC = 125 °C
0.17
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
350
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Foot (Drain)
RthJF
300
Notes
a. Package limited.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
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1
SQ7002K
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
60
-
-
2.5
50
V
VGS(th)
1.0
1.8
VDS = 0 V, VGS
DS = 0 V, VGS
=
=
20 V
12 V
-
-
Gate-Source Leakage
IGSS
µA
V
-
-
1
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 10 V
VDS = 60 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
-
-
1
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
50
µA
A
-
-
-
150
-
ID(on)
0.5
V
V
GS = 10 V
GS = 10 V
ID = 0.5 A
-
-
-
-
-
1.07
-
1.30
2.33
2.97
1.90
-
ID = 0.5 A, TJ = 125 °C
ID = 0.5 A, TJ = 175 °C
ID = 0.2 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 4.5 V
-
1.42
100
Forward Transconductanceb
Dynamicb
gfs
VDS = 10 V, ID = 0.2 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
19
4.8
24
6
VGS = 0 V
VDS = 30 V, f = 1 MHz
VDS = 30 V, ID = 0.25 A
pF
nC
2.3
3
0.9
1.4
-
Qgs
Qgd
td(on)
tr
V
GS = 4.5 V
0.3
0.4
-
14.6
15.3
8.6
22
23
13
16
VDD = 30 V, RL = 150
ID 0.250 A, VGEN = 4.5 V, Rg = 120
ns
Turn-Off Delay Timec
Fall Timec
td(off)
tf
10.6
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Pulsed Currenta
ISM
-
-
-
0.8
1.2
A
V
Forward Voltage
VSD
IF = 0.2 A, VGS = 0 V
0.83
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
SQ7002K
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.005
0.004
0.003
0.002
0.001
0.000
1.0E+00
1.0E-02
1.0E-04
1.0E-06
1.0E-08
1.0E-10
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
0
6
12
18
24
30
0
6
12
18
24
30
VGS - Gate Source Voltage (V)
VGS - Gate Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
T
= 25 °C
C
T
= 125 °C
C
T
C
= - 55 °C
4
0
1
2
3
4
5
0
1
2
3
5
6
V
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
GS
Transfer Characteristics
Output Characteristics
5
4
3
2
1
0
35
28
21
14
7
Ciss
VGS = 4.5 V
Coss
VGS = 10 V
Crss
0
0
12
24
36
48
60
0.0
0.2
0.4
0.6
0.8
1.0
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
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3
SQ7002K
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
5
4
3
2
1
0
I
= 0.2 A
D
ID = 0.25 A
V
GS
= 10 V
VDS = 30 V
V
= 4.5 V
GS
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
1.5
Qg - Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
1
10
8
T
J
= 150 °C
0.1
0.01
6
4
T
J
= 25 °C
T
J
= 150 °C
2
T
J
= 25 °C
0
0.001
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
80
77
74
71
68
65
I
= 1 mA
D
- 0.1
- 0.4
- 0.7
- 1.0
I
= 5 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
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Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
SQ7002K
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
10
IDM Limited
1
100 μs
Limited by RDS(on)
*
1 ms
0.1
0.01
ID Limited
10 ms
100 ms
1 s
10 s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.001
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 350 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
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5
SQ7002K
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted
on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary
depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65547.
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Document Number: 65547
S11-0225-Rev. B, 14-Feb-11
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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