TST0922-MDD [ATMEL]
Narrow Band Medium Power Amplifier, 880MHz Min, 915MHz Max, FLIPCHIP, 17 PIN;
| 型号： | TST0922-MDD |
| 厂家： | 
ATMEL |
| 描述： | Narrow Band Medium Power Amplifier, 880MHz Min, 915MHz Max, FLIPCHIP, 17 PIN ATM 异步传输模式 PC 射频 微波 |
| 文件： | 总8页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TST0922
SiGe-Power Amplifier for GSM 900 (Flipchip Version)
Description
The TST0922 is a monolithic integrated power amplifier
IC in flipchip technology. The device is manufactured
using TEMIC Semiconductors’ Silicon-Germanium leackage current in power-down mode the TST0922
(SiGe) technology and has been designed for use in GSM needs few external components and no high-side switch
900 MHz mobile phones.
transistor which reduces system cost.
With a single supply voltage of 3 V and a neglectable
FD e3a4t.u5 rdBesm output power
D No external power-supply switch required
D Power-ramp control
D Simple output matching for maximum flexibility
D Flipchip package
D Power Added Efficiency (PAE) 50 %
D Single-supply operation at 3 V
no negative voltage necessary
D Current consumption in power-down mode ≤ 10 µA
Block Diagram
V
V
CC2
GND
CC1
RF
RF /V
IN
Out CC3
Match
Match
Match
V
CTL
V
Control
CC,CTL
GND
16501
Figure 1. Block diagram
Ordering Information
Extended Type Number
TST0922-MDD
Package
Flipchip
Remarks
Rev. A1, 08-May-00
1 (8)
Preliminary Specification
TST0922
Pad Description
Pad
Symbol
Function
Supply voltage 1
X-Coordinate of
Y-Coordinate of Pad
*)
*)
Pad (mm)
(mm)
1
2
Vcc1
RFin
0
1500
1000
500
0
RF input
0
3
VCCctrl
VCTL
Supply voltage for control
Control input
0
4
0
5
Vcc2
Supply voltage 2
Ground
500
500
500
900
1527
1527
1527
1527
1527
2474
2474
2474
2474
1630
891
142
1630
1630
1230
830
430
30
6
GND
7
GND
Ground
8
GND
Ground
9
GND
Ground
10
11
12
13
14
15
16
17
GND
Ground
GND
Ground
GND
Ground
GND
Ground
RFout/ Vcc3
RFout/ Vcc3
RFout/ Vcc3
RFout/ Vcc3
Relative to centre of Pad 4
RF output/ supply voltage 3
RF output/ supply voltage 3
RF output/ supply voltage 3
RF output/ supply voltage 3
1391
991
591
191
*)
Pad Location
9
8
5
1
2
14
15
16
17
10
6
11
12
13
3
4
7
0.0
3.26
Dimensions-scale division = 100 mm, for pad coordinates see Pad Decsription table.
Figure 2. Pad location
2 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Absolute Maximum Ratings
All voltages are referred to GND
Parameter
Supply voltage
Input power
Symbol
Min.
0
Typ.
Max.
5.0
Unit
dBm
V
CC
V
13
P
in
Gain control voltage
Duty cycle for operation
Burst duration
Junction temperature
Storage temperature
V
CTL
2.2
25
1.2
+150
+150
V
%
ms
°C
°C
T
burst
T
j
T
stg
–40
Thermal Resistance
Parameters
Symbol
Symbol
Value
tbd
Unit
Operating Range
Parameter
Min.
2.4
Typ.
3.5
Max.
4.5
Unit
V
Supply voltage
V
CC1
V
CC2
V
CC3
V
CC,CTL
Ambient temperature
Input frequency
T
– 25
+ 85
°C
MHz
amb
900
f
in
Electrical Characteristics
Test conditions: V = V
,....., V
V
= + 3.5 V, T
= + 25°C (see application circuit)
CC
amb
CC1
CC3, CC, CTL
Parameters
Power Supply
Supply voltage
Test Conditions
Symbol
Min.
2.4
Typ.
3.5
Max.
4.5
Unit
V
CC
V
A
Current consumption
Active mode
= 34.5 dBm,
PAE = 50%
I
1.70
P
out
Current consumption
(leackage current)
Power-down mode
I
10
µA
V
CTL
≤ 0.2 V
RF Input
Frequency range
Input impedance *
Input power
f
Z
880
900
50
3
915
MHz
Ω
dBm
in
i
12
P
in
Input VSWR *
2 : 1
P
P
= 0 to 12 dBm,
in
= 34.5 dBm
out
* With external matching, see application circuit
Rev. A1, 08-May-00
3 (8)
Preliminary Specification
TST0922
Electrical Characteristics (continued)
Test conditions: V = V
,....., V
V
= + 3.5 V, T
= + 25°C (see application circuit)
CC
amb
CC1
CC3, CC, CTL
Parameters
RF Output
Output impedance *
Test Conditions
Symbol
Min.
34.4
Typ.
Max.
Unit
Z
50
34.8
Ω
dBm
o
Output power:
V
CC
= 3.5 V,
P
out
normal conditions
extreme conditions
T
= +25°C
= 3 dBm,
amb
P
in
R = RG = 50 Ω
L
32.0
33.0
dBm
V
= 2.7 V,
P
out
CC
T
amb
= +85°C
P
in
= 3 dBm,
R = R = 50 Ω
L
G
Minimum output power
Power added efficiency
– 20
dBm
%
V
= 0.3 V
CTL
PAE
25
35
50
V
CC
V
CC
V
CC
= 3 V, P
= 3 V, P
= 3 V, P
= 28 dBm
= 30 dBm
=
out
out
out
33.5 dBm
Stability
T
= –25 to + 85 °C,
10 : 1
10 : 1
amb
no spurious ≥ –60 dBc
Load mismatch
(stable, no change)
VSWR
P
= 34.5 dBm,
out
all phases, no damage
Second harmonic distortion
Third harmonic distortion
Noise power
2fo
3fo
–35
–35
dBc
dBc
P
out
= 34 dBm,
RBW = 100 kHz
f = 925 to 935 MHz
f ≥ 935 MHz
–73
–85
– 70
– 82
dBm
dBm
Rise and fall time
t ; t
r
0.5
µs
f
Isolation between input and
output
50
dB
P
= 0 to 10 dBm,
in
V
CTL
down)
≤ 0.2 V (power
Power Control
Control-curve slope
Power-control range
Control-voltage range
P
≥ 25dBm
150
2.0
dB/V
dB
V
out
Vctrl = 0.3.to.2.0 V
50
0.3
V
I
CTL
Control current
P
in
= 0 to 10 dBm,
= 0 to 2.0 V
200
µA
V
CTL
CTL
* With external matching, see application circuit
4 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Application Circuit
VCC
220nF
100pF
100pF
1nF
22pF
flip chip TST0922
T6
1/4 wavelength line
22 pF
8.2 pF
VCTL
56pF
T7
VCC,CTL
T1*
T3
RFOUT
RFIN
VCCC2
10 pF h.Q.
AVX
900 MHz
3.9nH
VCCC1
T2
T5
39pF
AVX
220nF
220nF
T4
56pF
Microstrip line: FR4; Epsilon (r): 4.3; metal Cu: 3.5 mm distance 1. layer – rf ground 0.5 mm
length (mm) × width (mm)
T1: 2.08 × 1 + 2.6 × 0.25
T2: 4.6 × 0.5
T3: 1.5 × 0.25 + 0.93 × 0.2
T4: 11.85 × 1.0
T5: 6.7 × 0.5 + 3.14 × 0.25
T6: 68.06 × 0.5
T7: 1.34 × 0.27 + 5.74 × 1.16
T...*: –> stripline can be reduced to minimum length
Figure 3. Application circuit
Rev. A1, 08-May-00
5 (8)
Preliminary Specification
TST0922
PCB Layout
Figure 4. PCB layout
6 (8)
Rev. A1, 08-May-00
Preliminary Specification
TST0922
Package Information
Flipchip
Bump
0.3 mm
0.5 mm
Silicon
Passivation
technical drawings
according to DIN
specifications
16526
Rev. A1, 08-May-00
7 (8)
Preliminary Specification
TST0922
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
3.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with
such unintended or unauthorized use.
Data sheets can also be retrieved from the Internet:
http://www.temic–semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
8 (8)
Rev. A1, 08-May-00
Preliminary Specification
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