TST0951B-MFDG3 [ETC]
MICROWAVE/MILLIMETER WAVE AMPLIFIER|SINGLE|BIPOLAR|TSSOP|8PIN|PLASTIC ; 微波/毫米波放大器|单|双极| TSSOP | 8PIN |塑料\n
| 型号： | TST0951B-MFDG3 |
| 厂家： | 
ETC |
| 描述： | MICROWAVE/MILLIMETER WAVE AMPLIFIER|SINGLE|BIPOLAR|TSSOP|8PIN|PLASTIC
|
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TST0951
SiGe – Low-Noise Amplifier (1900 MHz)
Description
The TST0951 is a low-noise amplifier (LNA) in SiGe
technology. This LNA offers the possibility to apply a
gain switching through a control input pin, and provides
a power-down mode function for extending the battery
operation time.
In low-gain mode, the output drive capability is not
Electrostatic sensitive device.
Observe precautions for handling.
reduced, resulting in improved intermodulation
performance. The nominal gain is very precise and has
max. 1.0 dB gain variation over full temperature range
and supply-voltage range.
FD eIantpuutrferesquency 1800 to 2000 MHz
D High gain flatness ( 0.3 dB max.)
D Power-down function
D Low noise figure at high gain mode (< 3 dB)
D Precise gain (19 dB, 1.0 dB)
D Low– / high gain mode
D High reverse isolation (min. –40 dB)
D Small package (TSSO8)
Block Diagram
V
V
7
P
4
CC
Gain
on
3
Bandgap
5
1
RF
out
RF
in
6
8
2
GND
GND
GND
Figure 1. Block diagram
Ordering Information
Extended Type Number
Package
TSSO8
Remarks
Taped and reeled
TST0951B-MFDG3
Rev. A1, 25-Apr-00
1 (6)
TST0951
Pin Description
Pin
1
Symbol
RF
Function
1
2
3
4
8
7
6
5
GND
RF
in
RF input
Ground
in
2
GND
V
Gain
3
V
CC
Supply voltage
Power-down input
RF output
GND
4
P
on
TST0951
5
RF
out
V
CC
GND
6
GND
Ground
7
V
Gain
Gain switching input
Ground
RF
P
on
out
8
GND
Figure 2. Pinning
Functional Description
The TST0951 is a very precise amplifer, especially designed for DCS/ PCS telephone applications. The circuit consists
of three stages. By attenuating the output signal of the first stage, the complete amplifier gain is reduced and the
intermodulation behavior is improved.
Absolute Maximum Ratings
All voltages are referred to GND (Pins 2, 6 and 8)
Parameters
Pin 3
Symbol
Min.
2.7
–40
–40
–
Max.
3.3
+125
+150
–10
Unit
V
°C
°C
dBm
V
Supply voltage
V
CC
Junction temperature
Storage temperature
Input power
Power-down input
Gain switching input
T
j
T
stg
Pin 1
Pin 4
Pin 7
RF
in
P
on
0
0
V
CC
V
CC
V
Gain
V
Solder Reflow Profile (SMD Packages)
Parameters
Maximum heating rate
Peak temperature in preheat zone
Duration of time above melting point of solder
Peak reflow temperature
Symbol
Value
1 to 3
100 to 140
Unit
°C/s
°C
s
°C
T
D
T
PH
t
Min. 10 / Max. 130
220 to 225
MP
T
Peak
Maximum cooling rate
TPeak
2 to 4
°C/s
Wave Soldering (Through-Hole Packages)
Parameters
Maximum lead temperature (5 s)
Symbol
Value
260
Unit
°C
T
D
2 (6)
Rev. A1, 25-Apr-00
TST0951
Operation Range
All voltages are referred to GND (Pins 2, 6 and 8)
Parameters
Symbol
Min.
2.7
–20
Typ.
2.8
Max.
2.9
+70
Unit
V
°C
Supply voltage
V
T
CC
Ambient temperature
Input frequency
amb
RF
1800
2000
MHz
in
Note for biasing:
Apply first V , then P and V (see absolute maximum ratings)
CC
on
Gain
Electrical Characteristics
Test conditions: V = + 2.8 V, T
= +25°C, unless otherwise specified
CC
amb
Parameters
Power supply
Supply voltage
Test Conditions / Pins Symbol
Min.
2.7
Typ.
2.8
Max.
Unit
Pin 3
V
CC
2.9
V
Current consumption
active mode
I
10
50
12
200
mA
µA
a
power-down mode
I
pd
RF input / output
*)
Input impedance
Pin 1
Pin 5
Z
Z
50
50
W
W
i
*)
Output impedance
o
Frequency band
Nominal gain
Gain attenuation related to
nominal gain
F
G
DG
1800
18
17
2000
20
19
MHz
dB
dB
in
Pin 1 to 5
Pin 1 to 5
19
18
Gain flatness
Noise figure
Pin 1 to 5
Pin 1 to 5
–0.3
+0.3
dB
in low-gain mode
in high-gain mode
Input VSWR
NF
NF
9
20
3.0
dB
dB
*)
LNA active
in low-gain mode
in high-gain mode
Output VSWR
Pin 1
VSWR
VSWR
2:1
2:1
*)
LNA active
PON = ‘1’ Pin 5
LNA inactive
PON = ‘0’ Pin 5
VSWR
VSWR
2:1
3:1
Input 1 dB compression point
in low-gain mode
in high-gain mode
Input intercept point 3rd order
in low-gain mode
in high-gain mode
Reverse isolation
in low-gain mode
in high-gain mode
Control function
Control inputs threshold
high level
Pin 1 to 5
–16
–21
dBm
dBm
Pin 1 to 5
Pin 5 to 1
–7
–12
dBm
dBm
40
40
dB
dB
Pins 4 and 7
Pins 4 and 7
V
0.97 VCC
V
V
µA
TH
low level
Leakage current on control
inputs low level
V
TH
0.03 VCC
I
100
l
*)
with external matching (see application circuit)
Rev. A1, 25-Apr-00
3 (6)
TST0951
Power Down Logic
Level
P
Power Status
Power OFF
Power ON
on
‘0’
‘1’
Gain Control Logic
Gain Level
V
Gain
Gain
‘0’
Minimum gain
Maximum gain
‘1’
Test Circuit
V
RFout
Gain
C
C
7
C
C
6
9
8
L
t.b.d. 1n
3.3p
2
VCC
5.6µH
10p
t.b.d.
8
1
6
5
4
7
TST0951
2
3
C
1
C
C
3
5
3.3p
L
1
56p
10p
5.6µH
C
C
2
4
10p
1n
VCC Pon
RFin
Figure 3. Test circuit
4 (6)
Rev. A1, 25-Apr-00
TST0951
Package Information
3.1
2.9
5.0
4.8
Package TSSO8
Dimensions in mm
0.9
0.8
0.20
0.13
0.38
0.25
0.15
0.05
3.1
2.9
0.65
1.95
8
5
technical drawings
according to DIN
specifications
1
4
Rev. A1, 25-Apr-00
5 (6)
TST0951
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
2.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with
such unintended or unauthorized use.
Data sheets can also be retrieved from the Internet:
http://www.temic–semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
6 (6)
Rev. A1, 25-Apr-00
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