TST0950-MFDG3 [ETC]

RF AMPLIFIER|SINGLE|BIPOLAR|TSSOP|8PIN|PLASTIC ; 射频放大器|单|双极| TSSOP | 8PIN |塑料\n


型号：	TST0950-MFDG3
厂家：	ETC
描述：	RF AMPLIFIER\|SINGLE\|BIPOLAR\|TSSOP\|8PIN\|PLASTIC 射频放大器\|单\|双极\| TSSOP \| 8PIN \|塑料\n 射频放大器微波异步传输模式 ATM
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中文：	中文翻译
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TST0950

SiGe – Low Noise Amplifier (900 MHz)

Description

The TST0950 is a low-noise amplifier (LNA) in SiGe

technology. This LNA offers the possibility to apply a

gain switching through a control input pin, and provides

a power-down mode function for extending the battery

operation time.

In low-gain mode, the output drive capability is not

Electrostatic sensitive device.

Observe precautions for handling.

reduced, resulting in improved intermodulation

performance. The nominal gain is very precise and has

max. ±1.0 dB gain variation over full temperature range

and supply-voltage range.

F_De_Ia_nt_pu_utr_fe_res_{quency 925 to 960 MHz}

D High gain flatness (±0.3 dB max.)

D Power-down function

D Low noise figure at high gain mode (typ. 2.2 dB)

D Precise gain (19 dB, ±1.0 dB)

D High reverse isolation (min. –40 dB)

D Small package (TSSO8)

D Low– / high gain mode

Block Diagram

Gain

Bandgap

out

GND

Figure 1. Block diagram

Ordering Information

Extended Type Number

TST0950-MFDG3

Package

Remarks

TSSO8

Taped and reeled

Rev. A7, 04-Oct-00

1 ()

TST0950

Pin Description

Symbol

Function

GND

RF input

Ground

GND

Gain

GND

Supply voltage

Power-down input

RF output

TST0950

GND

out

GND

Ground

out

Gain

Gain switching input

Ground

GND

Figure 2. Pinning

Functional Description

The TST0950 is a very precise amplifer, especially designed for GSM telephone applications. The circuit consists of

three stages. By attenuating the output signal of the first stage, the complete amplifier gain is reduced and the

intermodulation behavior is improved.

Absolute Maximum Ratings

All voltages refer to GND (Pins 2, 6 and 8)

Parameter

Symbol

Min.

2.7

–40

–

Max.

3.3

Unit

Supply voltage

Pin 3

Junction temperature

Storage temperature

Input power

+125

+150

–10

°C

dBm

stg

Pin 1

Pin 4

Pin 7

Power-down input

Gain switching input

Gain

Solder Reflow Profile (SMD Packages)

Parameter

Symbol

Value

Unit

°C/s

°C

Maximum heating rate

1 to 3

Peak temperature in preheat zone

Duration of time above melting point of solder

Peak reflow temperature

100 to 140

Min. 10 / Max. 130

220 to 225

°C

Peak

Maximum cooling rate

T_Peak

2 to 4

°C/s

Wave Soldering (Through-Hole Packages)

Parameter

Symbol

Value

Unit

Maximum lead temperature (5 s)

260

°C

2 ()

Rev. A7, 04-Oct-00

TST0950

Operating Range

All voltages refer to GND (Pins 2, 6 and 8)

Parameter

Supply voltage

Symbol

Min.

2.7

Typ.

Max.

2.9

Unit

2.8

Ambient temperature

Input frequency

–20

925

+70

960

°C

amb

MHz

Note for biasing: supply first V , then P and V (see absolute maximum ratings)

Gain

Electrical Characteristics

Test conditions: V = + 2.8 V, T

= +25°C, unless otherwise specified,

amb

with external matching (see application circuit)

Parameter Test Conditions / Pins Symbol

Power supply

Min.

Typ.

Max.

Unit

Supply voltage

Pin 3

2.7

2.8

2.9

Current consumption

active mode

200

µA

power-down mode

IF input

Input impedance

Pin 1

Pin 5

Output impedance

Frequency band

Nominal gain

925

960

MHz

Pin 1 to 5

Gain attenuation related to

nominal gain

Gain flatness

Pin 1 to 5

–0.3

+0.3

Noise figure

in low-gain mode

in high-gain mode

2.2

2.5

Input VSWR

LNA active

in low-gain mode

in high-gain mode

Pin 1

VSWR

2:1

Output VSWR

LNA active

PON = ‘1’ Pin 5

VSWR

2:1

3:1

LNA inactive

PON = ‘0’ Pin 5

Input 1 dB compression point

in low-gain mode

Pin 1 to 5

–16

–21

dBm

in high-gain mode

Input intercept point 3rd order

in low-gain mode

Pin 1 to 5

Pin 5 to 1

–7

–12

dBm

in high-gain mode

Reverse isolation

in low-gain mode

in high-gain mode

Rev. A7, 04-Oct-00

3 ()

TST0950

Electrical Characteristics (continued)

Test conditions: V = + 2.8 V, T

= +25°C, unless otherwise specified,

amb

with external matching (see application circuit)

Parameter Test Conditions / Pins Symbol

Control function

Min.

Typ.

Max.

Unit

Control inputs threshold

high level

Pins 4 and 7

0.97 V_CC

low level

0.03 V_CC

Leakage current on control

inputs low level

100

µA

Power-Down Logic

Level

Power Status

Power OFF

Power ON

‘0’

‘1’

Gain Control Logic

Gain Level

Gain

‘0’

‘1’

Minimum gain

Maximum gain

Test Circuit

RF_out

Gain

33p

3.9p

V_CC

6.8n

39p

220

TST0950

33p

39p

6.8nH

5.6p

RF_in

Figure 3. Test circuit

V_CCP_on

4 ()

Rev. A7, 04-Oct-00

TST0950

Package Information

3.1

2.9

5.0

4.8

Package TSSO8

Dimensions in mm

0.9

0.8

0.20

0.13

0.38

0.25

0.15

0.05

3.1

2.9

0.65

1.95

technical drawings

according to DIN

specifications

Rev. A7, 04-Oct-00

5 ()

TST0950

Ozone Depleting Substances Policy Statement

It is the policy of Atmel Germany GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid

their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these

substances.

Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed

in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances

and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended

or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims,

costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death

associated with such unintended or unauthorized use.

Data sheets can also be retrieved from the Internet:

http://www.atmel–wm.com

Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423

6 ()

Rev. A7, 04-Oct-00

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