MRF630 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF630 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF630
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF630 is Designed for
UHF large signal, FM Land Mobile
Applications up to 512 MHz.
PACKAGE STYLE TO 205AD
FEATURES:
MILLIMETERS
INCHES
MIN MAX
DIM
A
B
C
D
E
MIN
MAX
• Grounded Emitter
• PG = 9.5 dB at 3.0 W/470 MHz
• Omnigold™ Metalization System
9.02 9.29 0.355 0.366
8.01 8.50 0.315 0.335
4.20 4.57 0.165 0.180
0.44 0.53 0.017 0.021
0.44 0.88 0.017 0.035
0.41 0.48 0.016 0.019
F
MAXIMUM RATINGS
G
H
J
K
L
M
P
R
5.08 BSC
0.200 BSC
0.72 0.86 0.028 0.034
0.74 0.01 0.029 0.040
12.70 19.05 0.500 0.750
1.0 A
16 V
IC
VCEO
VCES
VEBO
PDISS
TJ
6.35
--
0.25
--
45° BSC
45 °BSC
36 V
--
2.54
1.27
--
--
0.10
0.050
--
4.0 V
8.75 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
20 °C/W
1 = COLLECTOR
2 = BASE
3 = EMITTER
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 1.0 mA
16
V
36
BVCES
BVEBO
ICES
V
4.0
V
V
CE = 12.5 V
CE = 5.0 V
1.0
12
mA
---
V
IC = 100 mA
POUT = 3.0 W
20
hFE
V
CB = 12.5 V
f = 1.0 MHz
f = 470 MHz
8.0
COB
pF
9.5
10.8
55
PG
dB
%
VCC = 12.5 V
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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