MRAL1720-9_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRAL1720-9_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRAL1720-9
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE 250 2L FLG
The ASI MRAL1720-9 is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
C
FEATURES:
• Diffused Ballast Resistors.
• Internal Matching Network
• Omnigold™ Metalization System
B
B
E
MAXIMUM RATINGS
4.0 A (CONT)
42 V
IC
VCES
VEBO
TJ
3.5 V
-65 °C to +200 °C
-65 °C to +150 °C
4.5 °C/W
TSTG
θJC
NONE
MINIMUM TYPICAL MAXIMUM UNITS
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
IC = 80 mA
IE = 1.0 mA
42
V
3.5
BVEBO
ICBO
V
V
CB = 22 V
CE = 5.0 V
2.0
mA
---
V
IC = 400 mA
Pout = 9.0 W
10
100
hFE
VCB = 28 V
f = 1.0 MHz
f = 1.7 GHz & 2.0 GHz
12
Cob
pF
6.5
40
GPB
dB
%
VCE = 22 V
η
c
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRAL2327-12H
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, CASE 393-01, 3 PIN
MOTOROLA
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