MRAL2023-12 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRAL2023-12 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRAL2023-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRAL2023-12 is a Common
Base Device Designed for Class C
Amplifier Applications in L-Band FM
Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Input/Output Matching
MAXIMUM RATINGS
2.5 A
IC
40 V
VCES
PDISS
TJ
38 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.5 OC/W
1 = COLLECTOR
3 = EMITTER
2 = BASE
TSTG
θJC
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IE = 5.0 mA
VCB = 22 V
40
V
BVEBO
ICBO
3.5
V
2.5
mA
---
hFE
VCE = 5.0 V IC = 1.0 A
10
COB
VCB = 22 V
f = 1.0 MHz
20
pF
6.8
7.0
45
PG
dB
%
VCE = 22 V f = 2000 - 2300 MHz
POUT = 12.0 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRAL2327-12H
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, CASE 393-01, 3 PIN
MOTOROLA
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