MRAL2023-18 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRAL2023-18 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRAL2023-18
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG (C)
DESCRIPTION:
The ASI MRAL2023-18 is a
Common Base Device Designed for
Class C Amplifier Applications in L-
Band FM Microwave Links.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Input/Output Matching
MINIMUM
Inches/mm
MAXIMUM
Inches/mm
MAXIMUM RATINGS
A
B
C
D
E
F
G
H
I
.095/2.41
.105/2.67
4.0 A
IC
0125/3.18
.380/9.65
.780/19.81
.392/9.96
.645/16.38
.895/22.73
.002/0.05
.055/1.40
.105/2.67
.390/9.91
42 V
VCES
PDISS
TJ
.408/10.36
.655/16.64
.905/22.99
.006/0.15
.065/1.65
.130/3.30
.230/5.84
.408/10.36
70 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
TSTG
θJC
J
K
L
.392/.408
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 160 mA
42
V
BVEBO
ICBO
IE = 2.0 mA
3.5
V
VCB = 22 V
4.0
mA
---
hFE
VCE = 5.0 V IC = 800 mA
10
100
7.0
35
PG
dB
%
VCE = 22 V f = 2000 - 2300 MHz
POUT = 18.0 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRAL2327-12H
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, CASE 393-01, 3 PIN
MOTOROLA
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