AOL1412 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1412 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1412 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1412 is Pb-free (meets ROHS & Sony
259 specifications). AOL1412L is a Green Product
ordering option. AOL1412 and AOL1412L are
electrically identical.
VDS (V) = 30V
ID =85A (VGS = 10V)
R
DS(ON) < 3.9mΩ (VGS = 10V)
DS(ON) < 4.6mΩ (VGS = 4.5V)
R
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
V
A
I
TC=25°C
85
Continuous Drain
Current B
TC=100°C
ID
84
IDM
Pulsed Drain Current
Continuous Drain
Current H
200
TA=25°C
TA=70°C
27
A
IDSM
IAR
21
Avalanche Current C
40
A
Repetitive avalanche energy L=0.3mH C
EAR
240
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TA=25°C
5
3
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
Typ
19.6
50
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
60
RθJC
1
1.5
Alpha & Omega Semiconductor, Ltd.
AOL1412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
VDS=24V, VGS=0V
30
V
0.008
9
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
µA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
0.1
2.4
VGS(th)
ID(ON)
1.4
1.8
V
A
200
VGS=10V, ID=20A
3.2
5.0
3.8
112
0.4
3.9
6.2
4.6
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.5
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6430 7716
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
756
352
VGS=0V, VDS=0V, f=1MHz
0.9
1.4
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
96
44
115
53
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=20A
17
13
17.5
10
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
56
10.5
20
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
ns
Qrr
26
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation P
and current rating IDSM
θJA
DSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
I. The maximum current rating is limited by bond-wires.
Rev1: June 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
150
120
90
30
25
20
15
10
5
10V
6V
VDS=5V
4.5V
125°
VGS=3.5V
60
25°C
30
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
5
4
3
2
2
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=10V
VGS=4.5V
1
0
0.8
5
10
15
20
25
30
0
30
60
90
120
150
180
210
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
6
4
25°C
2
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
8
10000
8000
6000
4000
2000
0
VDS=15V
ID=20A
Ciss
6
4
Crss
2
Coss
0
0
20
40
60
80
100
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
10µs
180
160
140
120
100
80
100µ
TJ(Max)=175°C
TC=25°C
1ms
RDS(ON)
limited
0.1s
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200
150
100
50
110
100
90
80
70
60
50
40
30
20
10
0
TC=25°C
TC=150°C
1.0E-06
0
0
25
50
75
100 125 150 175
1.0E-07
1.0E-05
1.0E-04
1.0E-03
T
CASE (°C)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
100
80
60
40
20
0
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
0.01
T
J,PK=TA+PDM.ZθJA.RθJA
Ton
T
RθJA=60°C/W
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
AOL1412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
0.8
20A
1.0E-02
10A
0.7
VDS=24V
0.6
1.0E-03
VDS=12V
0.5
5A
0.4
1.0E-04
0.3
0.2
0.1
0
1.0E-05
1.0E-06
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
70
60
50
40
30
20
10
8
25
3
di/dt=800A/us
125ºC
di/dt=800A/us
125ºC
2.5
2
20
15
10
5
7
6
5
4
25ºC
trr
25ºC
Qrr
Irm
1.5
1
125ºC
125ºC
S
25ºC
25
0.5
0
25ºC
0
0
0
0
5
10
15
20
25
30
5
10
15
20
30
Is (A)
Is (A)
Figure 20: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
3
2
1
0
125ºC
25ºC
Is=20A
Is=20A
50
40
30
20
10
0
125ºC
25ºC
125ºC
25ºC
25ºC
trr
Qrr
S
125ºC
Irm
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
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