AOL1408L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1408L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1408
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1408 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard Product AOL1408 is Pb-free
(meets ROHS & Sony 259 specifications). AOL1408L
is a Green Product ordering option. AOL1408 and
AOL1408L are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 4mΩ (VGS = 10V)
DS(ON) < 6mΩ (VGS = 4.5V)
R
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B,G
30
±20
85
V
V
VGS
TC=25°C G
TC=100°C B
ID
73
IDM
Pulsed Drain Current
Continuous Drain
Current G
200
18
A
TA=25°C
TA=70°C
IDSM
IAR
14
Avalanche Current C
30
A
Repetitive avalanche energy L=0.1mH C
EAR
45
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
50
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
-55 to 175
°C
Symbol
Typ
19.6
48
Max
25
60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
1
1.5
Alpha & Omega Semiconductor, Ltd.
AOL1408
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
0.005
1.8
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
VDS=24V, VGS=0V
30
V
1
IDSS
Zero Gate Voltage Drain Current
μA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250μA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
200
A
V
GS=10V, ID=20A
3.2
4.3
4.9
85
4
5.2
6
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6060 7000
638
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
355
VGS=0V, VDS=0V, f=1MHz
0.45
0.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
96.4
46.4
13.6
15.6
15.7
14.2
55.5
14
115
55
nC
nC
nC
nC
ns
VGS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
21
21
75
21
38
29
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Turn-On Rise Time
ns
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
24
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating. Rev1. Dec. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VDS=5V
10V
4.5V
3.5V
125°C
VGS=3V
25°C
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
V
DS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
14
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
6
1.0E-03
25°C
4
1.0E-04
1.0E-05
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
7000
6000
5000
4000
3000
2000
1000
0
10
8
VDS=15V
ID=20A
Ciss
6
4
Coss
Crss
2
0
0
20
40
60
80
100
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
1000
100
10
1000
TJ(Max)=175°C
TC=25°C
10μs
800
600
400
200
0
100μs
1ms
10ms
RDS(ON)
limited
DC
TJ(Max)=175°C
TC=25°C
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
TA=25°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125 150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
Ton
T
Single Pulse
0.0001
RθJA=60°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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