AOB29S50 [AOS]
500V 29A a MOS Power Transistor; 500V 29A的MOS功率晶体管
| 型号： | AOB29S50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V 29A a MOS Power Transistor |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT29S50/AOB29S50/AOTF29S50
500V 29A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
600V
The AOT29S50 & AOB29S50 & AOTF29S50 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
120A
0.15Ω
26.6nC
6.3µJ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT29S50L & AOB29S50L & AOTF29S50L
Top View
TO-263
D2PAK
TO-220
TO-220F
D
D
G
S
S
S
D
D
G
G
S
G
AOT29S50
AOTF29S50
AOB29S50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT29S50/AOB29S50 AOTF29S50
AOTF29S50L
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
A
TC=25°C
29
18
29*
18*
29*
18*
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
120
7.5
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
110
608
mJ
357
2.9
50
37.9
0.3
W
W/ oC
PD
Power Dissipation B
Derate above 25oC
0.4
100
20
MOSFET dv/dt ruggedness
dv/dt
V/ns
°C
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT29S50/AOB29S50 AOTF29S50
AOTF29S50L
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
--
--
°C/W
°C/W
Maximum Junction-to-Case
0.35
2.5
3.3
* Drain current limited by maximum junction temperature.
Rev0: March 2012
www.aosmd.com
Page 1 of 7
AOT29S50/AOB29S50/AOTF29S50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
-
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=500V, VGS=0V
500
-
600
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
550
-
1
V
-
IDSS
µA
VDS=400V, TJ=150°C
-
10
-
-
IGSS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
-
±100
3.9
0.15
0.4
-
nΑ
V
VGS(th)
VDS=5V,ID=250µA
2.6
3.3
0.13
0.34
0.85
-
VGS=10V, ID=14.5A, TJ=25°C
-
-
-
-
-
Ω
Ω
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=14.5A, TJ=150°C
IS=14.5A,VGS=0V, TJ=25°C
VSD
IS
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
29
120
A
ISM
-
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-
-
1312
88
-
-
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related H
Co(er)
Co(tr)
-
-
78
-
-
pF
pF
VGS=0V, VDS=0 to 400V, f=1MHz
Effective output capacitance, time
related I
227
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
-
-
2.5
4.8
-
-
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
-
-
-
26.6
6.2
9.2
28
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=14.5A
VGS=10V, VDS=400V, ID=14.5A,
39
RG=25Ω
tD(off)
tf
103
40
trr
IF=14.5A,dI/dt=100A/µs,VDS=400V
IF=14.5A,dI/dt=100A/µs,VDS=400V
IF=14.5A,dI/dt=100A/µs,VDS=400V
387
29.6
7.3
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
Irm
Qrr
µC
Body Diode Reverse Recovery Charge
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: March 2012
www.aosmd.com
Page 2 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
50
10V
10V
45
40
35
30
25
20
15
10
5
35
7V
7V
30
6V
6V
25
20
5.5V
5V
5.5V
15
10
5
5V
VGS=4.5V
VGS=4.5V
0
0
0
5
10
15
20
0
5
10
15
20
VDS (Volts)
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
Figure 1: On-Region Characteristics@25°C
1000
100
10
0.5
0.4
0.3
0.2
0.1
0.0
VDS=20V
125°C
-55°C
VGS=10V
1
25°C
0.1
0.01
0
10
20
30
40
50
60
2
4
6
8
10
ID (A)
VGS(Volts)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
Figure 3: Transfer Characteristics
1.2
1.1
1
3
2.5
2
VGS=10V
ID=14.5A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Rev0: March 2012
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Page 3 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
12
VDS=400V
ID=14.5A
9
6
3
0
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
40
VSD (Volts)
Q
g (nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
10
Ciss
8
6
4
2
0
Eoss
Coss
Crss
10
1
0
0
100
200
VDS (Volts)
300
400
500
100
200
VDS (Volts)
Figure 9: Capacitance Characteristics
300
400
500
Figure 10: Coss stroed Energy
1000
100
10
1000
100
10
10µs
RDS(ON)
RDS(ON)
10µs
limited
limited
100µs
100µs
1ms
1ms
1
1
10ms
DC
10ms
DC
0.1s
1s
0.1
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
1000
0.1
1
10
VDS (Volts)
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)29S50 (Note F)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF29S50(Note F)
Rev0: March 2012
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Page 4 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
600
500
400
300
200
100
0
1000
100
10µs
RDS(ON)
10
limited
100µs
1ms
1
0.1
10ms
0.1s
DC
TJ(Max)=150°C
TC=25°C
1s
0.01
0.1
1
10
100
1000
25
50
75
CASE (°C)
Figure 14: Avalanche energy
100
125
150
175
VDS (Volts)
T
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev0: March 2012
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Page 5 of 7
AOT29S50/AOB29S50/AOTF29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.35°C/W
1
0.1
PD
Ton
T
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.001
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)29S50 (Note F)
0.01
0.1
1
10
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF29S50 (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=3.3°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF29S50L (Note F)
Rev0: March 2012
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Page 6 of 7
AOT29S50/AOB29S50/AOTF29S50
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: March 2012
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Page 7 of 7
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